Richard Hammond

Person

Harriseahhead, GB

People

Patents Grantslast 30 patents

Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 10,629,735
- Issue date Apr 21, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming strained-semiconductor-on-insulator device struc...
- Patent number 10,510,581
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 10,164,015
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods for forming semiconductor device structures
- Patent number 10,050,145
- Issue date Aug 14, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 9,923,057
- Issue date Mar 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 9,812,572
- Issue date Nov 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor device structures
- Patent number 9,601,623
- Issue date Mar 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming strained-semiconductor-on-insulator device struc...
- Patent number 9,548,236
- Issue date Jan 17, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 9,343,539
- Issue date May 17, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 9,281,376
- Issue date Mar 8, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods for forming semiconductor device structures
- Patent number 9,064,930
- Issue date Jun 23, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF circuits including transistors having strained material layers
- Patent number 8,809,835
- Issue date Aug 19, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming strained-semiconductor-on-insulator device struc...
- Patent number 8,748,292
- Issue date Jun 10, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 8,722,495
- Issue date May 13, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods for forming semiconductor device structures
- Patent number 8,586,452
- Issue date Nov 19, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 8,344,355
- Issue date Jan 1, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
RF circuits including transistors having strained material layers
- Patent number 8,247,798
- Issue date Aug 21, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reacted conductive gate electrodes
- Patent number 8,129,821
- Issue date Mar 6, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 8,106,380
- Issue date Jan 31, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III-V semiconductor device structures
- Patent number 8,026,534
- Issue date Sep 27, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 7,884,353
- Issue date Feb 8, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew Currie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 7,846,802
- Issue date Dec 7, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods for forming III-V semiconductor device structures
- Patent number 7,838,392
- Issue date Nov 23, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 7,776,697
- Issue date Aug 17, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF circuits including transistors having strained material layers
- Patent number 7,709,828
- Issue date May 4, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming strained-semiconductor-on-insulator device stru...
- Patent number 7,588,994
- Issue date Sep 15, 2009
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce junction leakage current in strained silicon on si...
- Patent number 7,425,751
- Issue date Sep 16, 2008
- Agency for Science, Technology and Research
- Narayanan Balasubramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-semiconductor-on-insulator device structures with elevated...
- Patent number 7,420,201
- Issue date Sep 2, 2008
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained germanium-on-insulator device structures
- Patent number 7,414,259
- Issue date Aug 19, 2008
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming strained-semiconductor-on-insulator device stru...
- Patent number 7,297,612
- Issue date Nov 20, 2007
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Reacted Conductive Gate Electrodes and Methods of Making the Same
- Publication number 20180053852
- Publication date Feb 22, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Semiconductor Device Structures
- Publication number 20170179285
- Publication date Jun 22, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Strained-Semiconductor-on-Insulator Device Struc...
- Publication number 20170117176
- Publication date Apr 27, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reacted Conductive Gate Electrodes and Methods of Making the Same
- Publication number 20160240676
- Publication date Aug 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures Employing Strained Material Layers with De...
- Publication number 20160190254
- Publication date Jun 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reacted Conductive Gate Electrodes and Methods of Making the Same
- Publication number 20150243752
- Publication date Aug 27, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Semiconductor Device Structures
- Publication number 20150243788
- Publication date Aug 27, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Strained-Semiconductor-on-Insulator Device Struc...
- Publication number 20140242778
- Publication date Aug 28, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures Employing Strained Material Layers with De...
- Publication number 20140220755
- Publication date Aug 7, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Semiconductor Device Structures
- Publication number 20140051230
- Publication date Feb 20, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures Employing Strained Material Layers with De...
- Publication number 20130040433
- Publication date Feb 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF Circuits Including Transistors Having Strained Material Layers
- Publication number 20120299120
- Publication date Nov 29, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor Structures Employing Strained Material Layers with De...
- Publication number 20120086047
- Publication date Apr 12, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20110318893
- Publication date Dec 29, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF Circuits Including Transistors Having Strained Material Layers
- Publication number 20110121362
- Publication date May 26, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor Structures Employing Strained Material Layers with De...
- Publication number 20110095363
- Publication date Apr 28, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Semiconductor Device Structures
- Publication number 20110073908
- Publication date Mar 31, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING III-V SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20080128751
- Publication date Jun 5, 2008
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate strained-semiconductor-on-insulator device structures
- Publication number 20060197124
- Publication date Sep 7, 2006
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming double gate strained-semiconductor-on-insulator...
- Publication number 20060197125
- Publication date Sep 7, 2006
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming structures including strained-semiconductor-on-...
- Publication number 20060197126
- Publication date Sep 7, 2006
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming strained-semiconductor-on-insulator bipolar dev...
- Publication number 20060197123
- Publication date Sep 7, 2006
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-semiconductor-on-insulator bipolar device structures
- Publication number 20060186510
- Publication date Aug 24, 2006
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-semiconductor-on-insulator finFET device structures
- Publication number 20050280103
- Publication date Dec 22, 2005
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-semiconductor-on-insulator device structures with elevated...
- Publication number 20050218453
- Publication date Oct 6, 2005
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming strained-semiconductor-on-insulator device stru...
- Publication number 20050212061
- Publication date Sep 29, 2005
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained germanium-on-insulator device structures
- Publication number 20050205934
- Publication date Sep 22, 2005
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming strained-semiconductor-on-insulator device stru...
- Publication number 20050199954
- Publication date Sep 15, 2005
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate technology for strained surface channel and strained buried ch...
- Publication number 20050202640
- Publication date Sep 15, 2005
- AmberWave Systems Corporation
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-semiconductor-on-insulator device structures
- Publication number 20050189563
- Publication date Sep 1, 2005
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS

Richard Hammond

Person

Patents Grantslast 30 patents

Reacted conductive gate electrodes and methods of making the same

Methods of forming strained-semiconductor-on-insulator device struc...

Semiconductor structures employing strained material layers with de...

Methods for forming semiconductor device structures

Semiconductor structures employing strained material layers with de...

Reacted conductive gate electrodes and methods of making the same

Methods for forming semiconductor device structures

Methods of forming strained-semiconductor-on-insulator device struc...

Reacted conductive gate electrodes and methods of making the same

Semiconductor structures employing strained material layers with de...

Methods for forming semiconductor device structures

RF circuits including transistors having strained material layers

Methods of forming strained-semiconductor-on-insulator device struc...

Semiconductor structures employing strained material layers with de...

Methods for forming semiconductor device structures

Semiconductor structures employing strained material layers with de...

RF circuits including transistors having strained material layers

Reacted conductive gate electrodes

Semiconductor structures employing strained material layers with de...

III-V semiconductor device structures

Semiconductor structures employing strained material layers with de...

Semiconductor structures employing strained material layers with de...

Methods for forming III-V semiconductor device structures

Semiconductor structures employing strained material layers with de...

RF circuits including transistors having strained material layers

Methods for forming strained-semiconductor-on-insulator device stru...

Method to reduce junction leakage current in strained silicon on si...

Strained-semiconductor-on-insulator device structures with elevated...

Strained germanium-on-insulator device structures

Methods for forming strained-semiconductor-on-insulator device stru...

Patents Applicationslast 30 patents

Reacted Conductive Gate Electrodes and Methods of Making the Same

Methods for Forming Semiconductor Device Structures

Methods of Forming Strained-Semiconductor-on-Insulator Device Struc...

Reacted Conductive Gate Electrodes and Methods of Making the Same

Semiconductor Structures Employing Strained Material Layers with De...

Reacted Conductive Gate Electrodes and Methods of Making the Same

Methods for Forming Semiconductor Device Structures

Methods of Forming Strained-Semiconductor-on-Insulator Device Struc...

Semiconductor Structures Employing Strained Material Layers with De...

Methods for Forming Semiconductor Device Structures

Semiconductor Structures Employing Strained Material Layers with De...

RF Circuits Including Transistors Having Strained Material Layers

Semiconductor Structures Employing Strained Material Layers with De...

METHODS FOR FORMING SEMICONDUCTOR DEVICE STRUCTURES

RF Circuits Including Transistors Having Strained Material Layers

Semiconductor Structures Employing Strained Material Layers with De...

III-V Semiconductor Device Structures

METHODS FOR FORMING III-V SEMICONDUCTOR DEVICE STRUCTURES

Double gate strained-semiconductor-on-insulator device structures

Methods for forming double gate strained-semiconductor-on-insulator...

Methods for forming structures including strained-semiconductor-on-...

Methods for forming strained-semiconductor-on-insulator bipolar dev...

Strained-semiconductor-on-insulator bipolar device structures

Strained-semiconductor-on-insulator finFET device structures

Strained-semiconductor-on-insulator device structures with elevated...

Methods for forming strained-semiconductor-on-insulator device stru...

Strained germanium-on-insulator device structures

Methods for forming strained-semiconductor-on-insulator device stru...

Gate technology for strained surface channel and strained buried ch...

Strained-semiconductor-on-insulator device structures