Richard J. Murphy

Person

Clinton Corners, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit system with carbon and non-carbon silicon
- Patent number 8,105,955
- Issue date Jan 31, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Jin Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fabrication process including an SiGe rework method
- Patent number 7,955,936
- Issue date Jun 7, 2011
- Chartered Semiconductor Manufacturing Ltd.
- Yong Siang Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-quality SGOI by annealing near the alloy melting point
- Patent number 7,679,141
- Issue date Mar 16, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-quality SGOI by annealing near the alloy melting point
- Patent number 7,348,253
- Issue date Mar 25, 2008
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing surface roughening during hydrogen prebake of...
- Patent number 6,958,286
- Issue date Oct 25, 2005
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Salicide formation method
- Patent number 6,916,729
- Issue date Jul 12, 2005
- Infineon Technologies AG
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving CVD film quality utilizing polysilicon getterer
- Patent number 6,749,684
- Issue date Jun 15, 2004
- International Business Machines Corporation
- Huajie Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Surface roughness improvement of SIMOX substrates by controlling or...
- Patent number 6,531,411
- Issue date Mar 11, 2003
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR REDUCING PUNCH-THROUGH DEFECTS
- Publication number 20120094498
- Publication date Apr 19, 2012
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Fabrication Process Including An SiGe Rework Method
- Publication number 20100009502
- Publication date Jan 14, 2010
- Yong Siang Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH CARBON AND NON-CARBON SILICON
- Publication number 20080121926
- Publication date May 29, 2008
- Chartered Semiconductor Manufacturing LTD.
- Jin Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-QUALITY SGOI BY ANNEALING NEAR THE ALLOY MELTING POINT
- Publication number 20080116483
- Publication date May 22, 2008
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of preventing surface roughening during hydrogen prebake of...
- Publication number 20050148161
- Publication date Jul 7, 2005
- Huajie Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of preventing surface roughening during hydrogen pre-bake of...
- Publication number 20050148162
- Publication date Jul 7, 2005
- Huajie Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
High-quality SGOI by annealing near the alloy melting point
- Publication number 20040259334
- Publication date Dec 23, 2004
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Salicide formation method
- Publication number 20040203229
- Publication date Oct 14, 2004
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS

Richard J. Murphy

Person

Patents Grantslast 30 patents

Integrated circuit system with carbon and non-carbon silicon

Semiconductor fabrication process including an SiGe rework method

High-quality SGOI by annealing near the alloy melting point

High-quality SGOI by annealing near the alloy melting point

Method of preventing surface roughening during hydrogen prebake of...

Salicide formation method

Method for improving CVD film quality utilizing polysilicon getterer

Surface roughness improvement of SIMOX substrates by controlling or...

Patents Applicationslast 30 patents

METHOD FOR REDUCING PUNCH-THROUGH DEFECTS

Semiconductor Fabrication Process Including An SiGe Rework Method

INTEGRATED CIRCUIT SYSTEM WITH CARBON AND NON-CARBON SILICON

HIGH-QUALITY SGOI BY ANNEALING NEAR THE ALLOY MELTING POINT

Method of preventing surface roughening during hydrogen prebake of...

Method of preventing surface roughening during hydrogen pre-bake of...

High-quality SGOI by annealing near the alloy melting point

Salicide formation method