Rick Brown

Person

Huber Hgts, OH, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a GaN P-i-N diode using implantation
- Patent number 9,484,470
- Issue date Nov 1, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based Schottky barrier diode with algan surface layer
- Patent number 9,450,112
- Issue date Sep 20, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for a wheel lock ring assembly
- Patent number 9,346,318
- Issue date May 24, 2016
- Goodrich Corporation
- Robert Lee Phillis
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Edge termination by ion implantation in gallium nitride
- Patent number 9,330,918
- Issue date May 3, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET utilizing a regrown channel
- Patent number 9,324,844
- Issue date Apr 26, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for diffusion and implantation in gallium nitride...
- Patent number 9,318,331
- Issue date Apr 19, 2016
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride JFET with gate and source electrodes on re...
- Patent number 9,318,619
- Issue date Apr 19, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for doping control in gallium nitride based devices
- Patent number 9,287,389
- Issue date Mar 15, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual lock ring wheel assembly
- Patent number 9,272,572
- Issue date Mar 1, 2016
- Goodrich Corporation
- Robert Lee Phillis
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Method and system for a gallium nitride self-aligned vertical MESFET
- Patent number 9,269,793
- Issue date Feb 23, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for floating guard rings in gallium nitride mater...
- Patent number 9,224,828
- Issue date Dec 29, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with buried layer in GaN materials
- Patent number 9,196,679
- Issue date Nov 24, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GAN vertical JFET utilizing a regrown gate
- Patent number 9,184,305
- Issue date Nov 10, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated vertical JFET and Schottky diode
- Patent number 9,171,937
- Issue date Oct 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabricating floating guard rings in GaN mater...
- Patent number 9,171,751
- Issue date Oct 27, 2015
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride P-i-N diode using implantation
- Patent number 9,171,900
- Issue date Oct 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...
- Patent number 9,171,923
- Issue date Oct 27, 2015
- Avogy, Inc.
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum gallium nitride etch stop layer for gallium nitride based...
- Patent number 9,159,784
- Issue date Oct 13, 2015
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for formation of P-N junctions in gallium nitride...
- Patent number 9,136,116
- Issue date Sep 15, 2015
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a gallium nitride vertical JFET with self-ali...
- Patent number 9,117,850
- Issue date Aug 25, 2015
- Avogy, Inc.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for local control of defect density in gallium ni...
- Patent number 9,093,395
- Issue date Jul 28, 2015
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum gallium nitride etch stop layer for gallium nitride based...
- Patent number 9,093,284
- Issue date Jul 28, 2015
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for junction termination in GaN materials using c...
- Patent number 8,969,180
- Issue date Mar 3, 2015
- Avogy, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET utilizing a regrown channel
- Patent number 8,969,912
- Issue date Mar 3, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride JFET with gate and source electrodes on re...
- Patent number 8,946,725
- Issue date Feb 3, 2015
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for doping control in gallium nitride based devices
- Patent number 8,946,788
- Issue date Feb 3, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated vertical JFET and Schottky diode
- Patent number 8,941,117
- Issue date Jan 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with buried layer in GaN materials
- Patent number 8,933,532
- Issue date Jan 13, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination by ion implantation in GaN
- Patent number 8,927,999
- Issue date Jan 6, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN self-aligned vertical MESFET
- Patent number 8,866,147
- Issue date Oct 21, 2014
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE
- Publication number 20160190351
- Publication date Jun 30, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...
- Publication number 20160190296
- Publication date Jun 30, 2016
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...
- Publication number 20160043182
- Publication date Feb 11, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20160043198
- Publication date Feb 11, 2016
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION
- Publication number 20150364612
- Publication date Dec 17, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20150340514
- Publication date Nov 26, 2015
- AVOGY, INC.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...
- Publication number 20150325677
- Publication date Nov 12, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE
- Publication number 20150200097
- Publication date Jul 16, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET
- Publication number 20150179772
- Publication date Jun 25, 2015
- AVOGY, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20150179733
- Publication date Jun 25, 2015
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
- Publication number 20150155372
- Publication date Jun 4, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...
- Publication number 20150137140
- Publication date May 21, 2015
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE
- Publication number 20150140746
- Publication date May 21, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL
- Publication number 20150132899
- Publication date May 14, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE...
- Publication number 20150017792
- Publication date Jan 15, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER
- Publication number 20140374769
- Publication date Dec 25, 2014
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20140370669
- Publication date Dec 18, 2014
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a gallium nitride p-i-n diode using implantation
- Publication number 20140346527
- Publication date Nov 27, 2014
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...
- Publication number 20140291691
- Publication date Oct 2, 2014
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR A WHEEL LOCK RING ASSEMBLY
- Publication number 20140292060
- Publication date Oct 2, 2014
- GOODRICH CORPORATION
- Robert Lee Phillis
- B60 - VEHICLES IN GENERAL
Information Patent Application
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...
- Publication number 20140287570
- Publication date Sep 25, 2014
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATER...
- Publication number 20140235030
- Publication date Aug 21, 2014
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GAN MATERIALS USING C...
- Publication number 20140206179
- Publication date Jul 24, 2014
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20140203328
- Publication date Jul 24, 2014
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL LOCK RING WHEEL ASSEMBLY
- Publication number 20140182759
- Publication date Jul 3, 2014
- GOODRICH CORPORATION
- Robert Lee Phillis
- B60 - VEHICLES IN GENERAL
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE
- Publication number 20140159051
- Publication date Jun 12, 2014
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASED...
- Publication number 20140162416
- Publication date Jun 12, 2014
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED...
- Publication number 20140145201
- Publication date May 29, 2014
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASE...
- Publication number 20140116328
- Publication date May 1, 2014
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
- Publication number 20140051236
- Publication date Feb 20, 2014
- AVOGY, INC.
- Madhan Raj
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of fabricating a GaN P-i-N diode using implantation

GaN-based Schottky barrier diode with algan surface layer

System and method for a wheel lock ring assembly

Edge termination by ion implantation in gallium nitride

Method and system for a GaN vertical JFET utilizing a regrown channel

Method and system for diffusion and implantation in gallium nitride...

Vertical gallium nitride JFET with gate and source electrodes on re...

Method and system for doping control in gallium nitride based devices

Dual lock ring wheel assembly

Method and system for a gallium nitride self-aligned vertical MESFET

Method and system for floating guard rings in gallium nitride mater...

Schottky diode with buried layer in GaN materials

Method and system for a GAN vertical JFET utilizing a regrown gate

Monolithically integrated vertical JFET and Schottky diode

Method and system for fabricating floating guard rings in GaN mater...

Method of fabricating a gallium nitride P-i-N diode using implantation

Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...

Aluminum gallium nitride etch stop layer for gallium nitride based...

Method and system for formation of P-N junctions in gallium nitride...

Method and system for a gallium nitride vertical JFET with self-ali...

Method and system for local control of defect density in gallium ni...

Aluminum gallium nitride etch stop layer for gallium nitride based...

Method and system for junction termination in GaN materials using c...

Method and system for a GaN vertical JFET utilizing a regrown channel

Vertical gallium nitride JFET with gate and source electrodes on re...

Method and system for doping control in gallium nitride based devices

Monolithically integrated vertical JFET and Schottky diode

Schottky diode with buried layer in GaN materials

Edge termination by ion implantation in GaN

Method and system for a GaN self-aligned vertical MESFET

Patents Applicationslast 30 patents

METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE

GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...

EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE

METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES

VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...

MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE

METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL

METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE...

GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

Method of fabricating a gallium nitride p-i-n diode using implantation

VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...

SYSTEM AND METHOD FOR A WHEEL LOCK RING ASSEMBLY

METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...

METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATER...

METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GAN MATERIALS USING C...

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

DUAL LOCK RING WHEEL ASSEMBLY

MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE

ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASED...

METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED...

METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASE...

GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE