Rishikesh Krishnan

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Precise bottom junction formation for vertical transport field effe...
- Patent number 12,068,415
- Issue date Aug 20, 2024
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried power rails located in a base layer including first, second,...
- Patent number 11,990,412
- Issue date May 21, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide for nanosheet transistor devices
- Patent number 11,888,048
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precise bottom junction formation for vertical transport field effe...
- Patent number 11,515,427
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide for nanosheet transistor devices
- Patent number 11,211,474
- Issue date Dec 28, 2021
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 11,081,583
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with highly active acceptor doping and method of production...
- Patent number 10,886,178
- Issue date Jan 5, 2021
- GLOBALFOUNDRIES Inc.
- Tek Po Rinus Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structures
- Patent number 10,790,198
- Issue date Sep 29, 2020
- GLOBALFOUNDRIES Inc.
- Fuad H. Al-Amoody
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 10,615,279
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 10,243,077
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave annealing of flowable oxides with trap layers
- Patent number 10,211,045
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 9,917,190
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal insulator metal capacitor with oxygen gettering layer
- Patent number 9,911,597
- Issue date Mar 6, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,831,084
- Issue date Nov 28, 2017
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Trench metal-insulator-metal capacitor with oxygen gettering layer
- Patent number 9,653,534
- Issue date May 16, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DT capacitor with silicide outer electrode and/or compressive stres...
- Patent number 9,653,535
- Issue date May 16, 2017
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and nanowire semiconductor devices with suspended channel re...
- Patent number 9,577,100
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Epitaxial growth of material on source/drain regions of FinFET stru...
- Patent number 9,536,985
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DT capacitor with silicide outer electrode and/or compressive stres...
- Patent number 9,496,329
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die level chemical mechanical polishing
- Patent number 9,373,524
- Issue date Jun 21, 2016
- International Business Machines Corporation
- Rishikesh Krishnan
- B24 - GRINDING POLISHING
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,373,501
- Issue date Jun 21, 2016
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Non-volatile memory structure employing high-k gate dielectric and...
- Patent number 9,318,336
- Issue date Apr 19, 2016
- GlobalFoundries U.S. 2 LLC
- Nicolas Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFET with dielectric isolation after gate module for improved sou...
- Patent number 9,312,364
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DT capacitor with silicide outer electrode and/or compressive stres...
- Patent number 9,299,766
- Issue date Mar 29, 2016
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer stress control with backside patterning
- Patent number 9,269,607
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Edward Engbrecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal source-drain merged by polycrystalline material
- Patent number 9,123,826
- Issue date Sep 1, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure employing high-k gate dielectric and...
- Patent number 9,099,394
- Issue date Aug 4, 2015
- International Business Machines Corporation
- Nicolas Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally stable high-K tetragonal HFO2 layer within high aspect ra...
- Patent number 9,087,927
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming capacitors having dielectric regions that includ...
- Patent number 8,993,044
- Issue date Mar 31, 2015
- Micron Technology, Inc.
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical components for microelectronic devices and methods of fo...
- Patent number 8,987,863
- Issue date Mar 24, 2015
- Micron Technology, Inc.
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION
- Publication number 20250006788
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETS WITH NON-SHARED WORK FUNCTION METALS
- Publication number 20230178553
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER RAILS
- Publication number 20230100113
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...
- Publication number 20230029561
- Publication date Feb 2, 2023
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES
- Publication number 20220069104
- Publication date Mar 3, 2022
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...
- Publication number 20210391473
- Publication date Dec 16, 2021
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES
- Publication number 20210217873
- Publication date Jul 15, 2021
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20200066908
- Publication date Feb 27, 2020
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH HIGHLY ACTIVE ACCEPTOR DOPING AND METHOD OF PRODUCTION...
- Publication number 20200066593
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Tek Po Rinus LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURES
- Publication number 20200051867
- Publication date Feb 13, 2020
- GLOBALFOUNDRIES INC.
- Fuad H. AL-AMOODY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION (STI) GAP FILL
- Publication number 20190027556
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20180097113
- Publication date Apr 5, 2018
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER
- Publication number 20170250073
- Publication date Aug 31, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20160197186
- Publication date Jul 7, 2016
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL-INSULATOR-METAL CAPACITOR WITH OXYGEN GETTERING LAYER
- Publication number 20160181353
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRU...
- Publication number 20160093720
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20160035878
- Publication date Feb 4, 2016
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...
- Publication number 20160027640
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE LEVEL CHEMICAL MECHANICAL POLISHING
- Publication number 20150371870
- Publication date Dec 24, 2015
- International Business Machines Corporation
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL RE...
- Publication number 20150364603
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER STRESS CONTROL WITH BACKSIDE PATTERNING
- Publication number 20150364362
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Edward Engbrecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...
- Publication number 20150357403
- Publication date Dec 10, 2015
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...
- Publication number 20150357402
- Publication date Dec 10, 2015
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20150349093
- Publication date Dec 3, 2015
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE LEVEL CHEMICAL MECHANICAL POLISHING
- Publication number 20150311088
- Publication date Oct 29, 2015
- International Business Machines Corporation
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...
- Publication number 20150279925
- Publication date Oct 1, 2015
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL
- Publication number 20150270332
- Publication date Sep 24, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND PROCESS TO DECOUPLE DEEP TRENCH CAPACITORS AND WELL I...
- Publication number 20150214244
- Publication date Jul 30, 2015
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RA...
- Publication number 20150044853
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitors Having Dielectric Regions that Include Multiple Metal Ox...
- Publication number 20150001674
- Publication date Jan 1, 2015
- Micron Technology, Inc.
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS

Rishikesh Krishnan

Person

Patents Grantslast 30 patents

Precise bottom junction formation for vertical transport field effe...

Buried power rails located in a base layer including first, second,...

Gate oxide for nanosheet transistor devices

Precise bottom junction formation for vertical transport field effe...

Gate oxide for nanosheet transistor devices

FinFET with dielectric isolation after gate module for improved sou...

Device with highly active acceptor doping and method of production...

Fin structures

FinFET with dielectric isolation after gate module for improved sou...

FinFET with dielectric isolation after gate module for improved sou...

Microwave annealing of flowable oxides with trap layers

FinFET with dielectric isolation after gate module for improved sou...

Trench metal insulator metal capacitor with oxygen gettering layer

Hydroxyl group termination for nucleation of a dielectric metallic...

Trench metal-insulator-metal capacitor with oxygen gettering layer

DT capacitor with silicide outer electrode and/or compressive stres...

FinFET and nanowire semiconductor devices with suspended channel re...

Epitaxial growth of material on source/drain regions of FinFET stru...

DT capacitor with silicide outer electrode and/or compressive stres...

Die level chemical mechanical polishing

Hydroxyl group termination for nucleation of a dielectric metallic...

Non-volatile memory structure employing high-k gate dielectric and...

finFET with dielectric isolation after gate module for improved sou...

DT capacitor with silicide outer electrode and/or compressive stres...

Wafer stress control with backside patterning

Single crystal source-drain merged by polycrystalline material

Non-volatile memory structure employing high-k gate dielectric and...

Thermally stable high-K tetragonal HFO2 layer within high aspect ra...

Methods of forming capacitors having dielectric regions that includ...

Electrical components for microelectronic devices and methods of fo...

Patents Applicationslast 30 patents

NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION

STACKED FETS WITH NON-SHARED WORK FUNCTION METALS

BACKSIDE POWER RAILS

PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...

GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES

PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...

GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

DEVICE WITH HIGHLY ACTIVE ACCEPTOR DOPING AND METHOD OF PRODUCTION...

FIN STRUCTURES

SHALLOW TRENCH ISOLATION (STI) GAP FILL

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

TRENCH METAL-INSULATOR-METAL CAPACITOR WITH OXYGEN GETTERING LAYER

EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRU...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...

DIE LEVEL CHEMICAL MECHANICAL POLISHING

FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL RE...

WAFER STRESS CONTROL WITH BACKSIDE PATTERNING

DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...

DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

DIE LEVEL CHEMICAL MECHANICAL POLISHING

DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...

SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL

STRUCTURE AND PROCESS TO DECOUPLE DEEP TRENCH CAPACITORS AND WELL I...

THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RA...

Capacitors Having Dielectric Regions that Include Multiple Metal Ox...