Robert J. Falster

Person

London, GB

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus for stressing semiconductor substrates
- Patent number 11,764,071
- Issue date Sep 19, 2023
- GlobalWafers Co., Ltd.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,655,559
- Issue date May 23, 2023
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,655,560
- Issue date May 23, 2023
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for stressing semiconductor substrates
- Patent number 11,282,715
- Issue date Mar 22, 2022
- GlobalWafers Co., Ltd.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stressing semiconductor substrates
- Patent number 11,276,583
- Issue date Mar 15, 2022
- GlobalWafers Co., Ltd.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stressing semiconductor substrates
- Patent number 11,276,582
- Issue date Mar 15, 2022
- GlobalWafers Co., Ltd.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,142,844
- Issue date Oct 12, 2021
- GlobalWafers Co., Ltd.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of treating silicon wafers to have intrinsic gettering and g...
- Patent number 10,707,093
- Issue date Jul 7, 2020
- Sunedison Semiconductor Limited (UEN201334164H)
- Young Jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of treating silicon wafers to have intrinsic gettering and g...
- Patent number 10,453,703
- Issue date Oct 22, 2019
- Sunedison Semiconductor Limited (UEN201334164H)
- Young Jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stressing semiconductor substrates
- Patent number 10,361,097
- Issue date Jul 23, 2019
- GlobalWafers Co., Ltd.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen precipitation in heavily doped silicon wafers sliced from in...
- Patent number 9,634,098
- Issue date Apr 25, 2017
- SunEdison Semiconductor Ltd. (UEN201334164H)
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processes and apparatus for preparing heterostructures with reduced...
- Patent number 9,583,363
- Issue date Feb 28, 2017
- SunEdison Semiconductor Limited (UEN201334164H)
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Processes and apparatus for preparing heterostructures with reduced...
- Patent number 9,583,364
- Issue date Feb 28, 2017
- SunEdison Semiconductor Limited (UEN201334164H)
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafers with suppressed minority carrier lifetime degradation
- Patent number 9,142,616
- Issue date Sep 22, 2015
- SunEdison, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of high precipitate density wafers by activation of inac...
- Patent number 9,129,919
- Issue date Sep 8, 2015
- SunEdison Semiconductor Limited
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Processes for suppressing minority carrier lifetime degradation in...
- Patent number 8,969,119
- Issue date Mar 3, 2015
- MEMC Singapore Pte. Ltd. (UEN200614794D)
- Robert J. Falster
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Arsenic and phosphorus doped silicon wafer substrates having intrin...
- Patent number 8,026,145
- Issue date Sep 27, 2011
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-uniform minority carrier lifetime distributions in high perform...
- Patent number 7,618,879
- Issue date Nov 17, 2009
- MEMC Electronics Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity silicon structure and a process for the preparatio...
- Patent number 7,521,382
- Issue date Apr 21, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arsenic and phosphorus doped silicon wafer substrates having intrin...
- Patent number 7,485,928
- Issue date Feb 3, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming low defect density, ideal oxygen precipitating...
- Patent number 7,442,253
- Issue date Oct 28, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing single crystal silicon having improved gate o...
- Patent number 7,431,765
- Issue date Oct 7, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for making non-uniform minority carrier lifetime distributi...
- Patent number 7,242,037
- Issue date Jul 10, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 7,229,693
- Issue date Jun 12, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling of thermal donor formation in high resistivi...
- Patent number 7,135,351
- Issue date Nov 14, 2006
- MEMC Electronic Materials, Inc.
- Martin J. Binns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of low defect density silicon
- Patent number 7,105,050
- Issue date Sep 12, 2006
- MEMC Electronic Materials, Inc.
- Vladimir V. Voronkov
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Single crystal silicon wafer having an epitaxial layer substantiall...
- Patent number 7,097,718
- Issue date Aug 29, 2006
- MEMC Electronic Materials, Inc.
- Luciano Mule'Stagno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing silicon on insulator structure having intrins...
- Patent number 7,071,080
- Issue date Jul 4, 2006
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for reclaiming semiconductor wafers and reclaimed wafers
- Patent number 7,008,874
- Issue date Mar 7, 2006
- MEMC Electronics Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal silicon having improved gate oxide integrity
- Patent number 6,986,925
- Issue date Jan 17, 2006
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20220056616
- Publication date Feb 24, 2022
- GLOBALWAFERS CO., LTD.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20210404088
- Publication date Dec 30, 2021
- GLOBALWAFERS CO., LTD.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20200216975
- Publication date Jul 9, 2020
- GlobalWafers Co., Ltd
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES
- Publication number 20190333778
- Publication date Oct 31, 2019
- GLOBALWAFERS CO., LTD.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES
- Publication number 20190311913
- Publication date Oct 10, 2019
- GLOBALWAFERS CO., LTD.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES
- Publication number 20190311912
- Publication date Oct 10, 2019
- GLOBALWAFERS CO., LTD.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES
- Publication number 20190295853
- Publication date Sep 26, 2019
- GLOBALWAFERS CO., LTD.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF TREATING SILICON WAFERS TO HAVE INTRINSIC GETTERING AND G...
- Publication number 20190267251
- Publication date Aug 29, 2019
- SunEdison Semiconductor Limited (UEN201334164H)
- Young Jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF TREATING SILICON WAFERS TO HAVE INTRINSIC GETTERING AND G...
- Publication number 20180182641
- Publication date Jun 28, 2018
- SunEdison Semiconductor Limited (UEN201334164H)
- Young Jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFERS WITH SUPPRESSED MINORITY CARRIER LIFETIME DEGRADATION
- Publication number 20150123248
- Publication date May 7, 2015
- SunEdison Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN PRECIPITATION IN HEAVILY DOPED SILICON WAFERS SLICED FROM IN...
- Publication number 20140361408
- Publication date Dec 11, 2014
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processes and Apparatus for Preparing Heterostructures with Reduced...
- Publication number 20140187022
- Publication date Jul 3, 2014
- SUNEDISON, INC.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Processes and Apparatus for Preparing Heterostructures with Reduced...
- Publication number 20140187023
- Publication date Jul 3, 2014
- SUNEDISON, INC.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for Stressing Semiconductor Substrates
- Publication number 20140182788
- Publication date Jul 3, 2014
- SUNEDISON, INC.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF HIGH PRECIPITATE DENSITY WAFERS BY ACTIVATION OF INAC...
- Publication number 20140141537
- Publication date May 22, 2014
- SUNEDISON, INC.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESSES FOR SUPPRESSING MINORITY CARRIER LIFETIME DEGRADATION IN...
- Publication number 20130102129
- Publication date Apr 25, 2013
- MEMC SINGAPORE PTE. LTD. (UEN200614794D)
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...
- Publication number 20110250739
- Publication date Oct 13, 2011
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSION OF OXYGEN PRECIPITATION IN HEAVILY DOPED SINGLE CRYSTAL...
- Publication number 20110177682
- Publication date Jul 21, 2011
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...
- Publication number 20090252974
- Publication date Oct 8, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRIN...
- Publication number 20090130824
- Publication date May 21, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY
- Publication number 20090022930
- Publication date Jan 22, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Suppression of Oxygen Precipitation in Heavily Doped Single Crystal...
- Publication number 20090004426
- Publication date Jan 1, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffusion Control in Heavily Doped Substrates
- Publication number 20090004458
- Publication date Jan 1, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON ON INSULATOR STRUCTURE WITH A SINGLE CRYSTAL CZ SILICON DEV...
- Publication number 20080020168
- Publication date Jan 24, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
NON-UNIFORM MINORITY CARRIER LIFETIME DISTRIBUTIONS IN HIGH PERFORM...
- Publication number 20070238266
- Publication date Oct 11, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...
- Publication number 20070224783
- Publication date Sep 27, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Arsenic and phosphorus doped silicon wafer substrates having intrin...
- Publication number 20070105279
- Publication date May 10, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
High resistivity silicon structure and a process for the preparatio...
- Publication number 20060263967
- Publication date Nov 23, 2006
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for the preparation of a semiconductor substrate with a non-...
- Publication number 20060075960
- Publication date Apr 13, 2006
- MEMC Electronic Materials, Inc.
- Marco Borgini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing silicon on insulator structure having intrins...
- Publication number 20050255671
- Publication date Nov 17, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS

Robert J. Falster

Person

Patents Grantslast 30 patents

Apparatus for stressing semiconductor substrates

High resistivity single crystal silicon ingot and wafer having impr...

High resistivity single crystal silicon ingot and wafer having impr...

Apparatus for stressing semiconductor substrates

Apparatus for stressing semiconductor substrates

Apparatus for stressing semiconductor substrates

High resistivity single crystal silicon ingot and wafer having impr...

Method of treating silicon wafers to have intrinsic gettering and g...

Method of treating silicon wafers to have intrinsic gettering and g...

Apparatus for stressing semiconductor substrates

Oxygen precipitation in heavily doped silicon wafers sliced from in...

Processes and apparatus for preparing heterostructures with reduced...

Processes and apparatus for preparing heterostructures with reduced...

Silicon wafers with suppressed minority carrier lifetime degradation

Production of high precipitate density wafers by activation of inac...

Processes for suppressing minority carrier lifetime degradation in...

Arsenic and phosphorus doped silicon wafer substrates having intrin...

Non-uniform minority carrier lifetime distributions in high perform...

High resistivity silicon structure and a process for the preparatio...

Arsenic and phosphorus doped silicon wafer substrates having intrin...

Process for forming low defect density, ideal oxygen precipitating...

Process for preparing single crystal silicon having improved gate o...

Process for making non-uniform minority carrier lifetime distributi...

Low defect density, ideal oxygen precipitating silicon

Method for controlling of thermal donor formation in high resistivi...

Method for the production of low defect density silicon

Single crystal silicon wafer having an epitaxial layer substantiall...

Process for producing silicon on insulator structure having intrins...

Process for reclaiming semiconductor wafers and reclaimed wafers

Single crystal silicon having improved gate oxide integrity

Patents Applicationslast 30 patents

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES

APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES

APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES

APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES

METHOD OF TREATING SILICON WAFERS TO HAVE INTRINSIC GETTERING AND G...

METHOD OF TREATING SILICON WAFERS TO HAVE INTRINSIC GETTERING AND G...

SILICON WAFERS WITH SUPPRESSED MINORITY CARRIER LIFETIME DEGRADATION

OXYGEN PRECIPITATION IN HEAVILY DOPED SILICON WAFERS SLICED FROM IN...

Processes and Apparatus for Preparing Heterostructures with Reduced...

Processes and Apparatus for Preparing Heterostructures with Reduced...

Apparatus for Stressing Semiconductor Substrates

PRODUCTION OF HIGH PRECIPITATE DENSITY WAFERS BY ACTIVATION OF INAC...

PROCESSES FOR SUPPRESSING MINORITY CARRIER LIFETIME DEGRADATION IN...

EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...

SUPPRESSION OF OXYGEN PRECIPITATION IN HEAVILY DOPED SINGLE CRYSTAL...

EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...

ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRIN...

SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY

Suppression of Oxygen Precipitation in Heavily Doped Single Crystal...

Diffusion Control in Heavily Doped Substrates

SILICON ON INSULATOR STRUCTURE WITH A SINGLE CRYSTAL CZ SILICON DEV...

NON-UNIFORM MINORITY CARRIER LIFETIME DISTRIBUTIONS IN HIGH PERFORM...

PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...

Arsenic and phosphorus doped silicon wafer substrates having intrin...

High resistivity silicon structure and a process for the preparatio...

Method for the preparation of a semiconductor substrate with a non-...

Process for producing silicon on insulator structure having intrins...