Robert Kuo-Chang Yang

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San Jose, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
High-voltage semiconductor device with lateral series capacitive st...
- Patent number 8,592,906
- Issue date Nov 26, 2013
- Fairchild Semiconductor Corporation
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS RELATED TO A JUNCTION FIELD-EFFECT TRANSISTOR
- Publication number 20130221429
- Publication date Aug 29, 2013
- Robert Kuo-Chang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage semiconductor device with lateral series capacitive st...
- Publication number 20070262398
- Publication date Nov 15, 2007
- FulTec Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS transistor with floating poly-filled trench for improved perfo...
- Publication number 20070052060
- Publication date Mar 8, 2007
- Robert Kuo-Chang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Terminations for semiconductor devices with floating vertical serie...
- Publication number 20070012983
- Publication date Jan 18, 2007
- Robert Kuo-Chang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS transistor with a poly-filled deep trench for improved perform...
- Publication number 20060267044
- Publication date Nov 30, 2006
- Robert Kuo-Chang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Increasing breakdown voltage in semiconductor devices with vertical...
- Publication number 20060255401
- Publication date Nov 16, 2006
- Robert Kuo-Chang Yang
- H01 - BASIC ELECTRIC ELEMENTS