Robert W. Wu

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Precision dielectric etch using hexafluorobutadiene
- Patent number 6,800,213
- Issue date Oct 5, 2004
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Yttrium oxide based surface coating for semiconductor IC processing...
- Patent number 6,776,873
- Issue date Aug 17, 2004
- Jennifer Y Sun
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Adjusting DC bias voltage in plasma chamber
- Patent number 6,513,452
- Issue date Feb 4, 2003
- Applied Materials Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inductively coupled RF Plasma reactor having an overhead solenoidal...
- Patent number 6,454,898
- Issue date Sep 24, 2002
- Applied Materials, Inc.
- Kenneth Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dielectric etch process reducing striations and maintaining critica...
- Patent number 6,432,318
- Issue date Aug 13, 2002
- Applied Materials, Inc.
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated post-etch treatment for a dielectric etch process
- Patent number 6,379,574
- Issue date Apr 30, 2002
- Applied Materials, Inc.
- Hui Ou-Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma process for selectively etching oxide using fluoropropane or...
- Patent number 6,361,705
- Issue date Mar 26, 2002
- Applied Materials, Inc.
- Ruiping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inductively coupled parallel-plate plasma reactor with a conical dome
- Patent number 6,308,654
- Issue date Oct 30, 2001
- Applied Materials, Inc.
- Gerhard Schneider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting DC bias voltage in plasma chamber
- Patent number 6,221,782
- Issue date Apr 24, 2001
- Applied Materials, Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable process for selectively etching oxide using fluoropropylene...
- Patent number 6,183,655
- Issue date Feb 6, 2001
- Applied Materials, Inc.
- Ruiping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method manifesting a wide process window and using hexafluoropropan...
- Patent number 6,074,959
- Issue date Jun 13, 2000
- Applied Materials, Inc.
- Ruiping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inductively coupled RF plasma reactor having an overhead solenoidal...
- Patent number 6,074,512
- Issue date Jun 13, 2000
- Applied Materials, Inc.
- Kenneth Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Independent gas feeds in a plasma reactor
- Patent number 6,009,830
- Issue date Jan 4, 2000
- Applied Materials Inc.
- Haojiang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Puncture resistant electrostatic chuck
- Patent number 5,986,875
- Issue date Nov 16, 1999
- Applied Materials, Inc.
- Arik Donde
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Silane etching process
- Patent number 5,965,463
- Issue date Oct 12, 1999
- Applied Materials, Inc.
- Chunshi Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded silicon carbide parts in a plasma reactor
- Patent number 5,910,221
- Issue date Jun 8, 1999
- Applied Materials, Inc.
- Robert W. Wu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide composite article particularly useful for plasma re...
- Patent number 5,904,778
- Issue date May 18, 1999
- Applied Materials, Inc.
- Hao A Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting DC bias voltage in plasma chambers
- Patent number 5,891,350
- Issue date Apr 6, 1999
- Applied Materials, Inc.
- Hong Ching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Broad-band adjustable power ratio phase-inverting plasma reactor
- Patent number 5,865,937
- Issue date Feb 2, 1999
- Applied Materials, Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Puncture resistant electrostatic chuck
- Patent number 5,729,423
- Issue date Mar 17, 1998
- Applied Materials, Inc.
- Arik Donde
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Inductively enhanced reactive ion etching
- Patent number 5,607,542
- Issue date Mar 4, 1997
- Applied Materials Inc.
- Robert Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjustable dc bias control in a plasma reactor
- Patent number 5,605,637
- Issue date Feb 25, 1997
- Applied Materials Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-cleaning polymer-free top electrode for parallel electrode etc...
- Patent number 5,585,012
- Issue date Dec 17, 1996
- Applied Materials Inc.
- Robert Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective coating for dielectric material on wafer support used in...
- Patent number 5,560,780
- Issue date Oct 1, 1996
- Applied Materials, Inc.
- Robert Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for plasma etching of vias
- Patent number 5,514,247
- Issue date May 7, 1996
- Applied Materials, Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a via in an integrated circuit structure by etc...
- Patent number 5,176,790
- Issue date Jan 5, 1993
- Applied Materials, Inc.
- Paul Arleo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of coating semiconductor processing apparatus with protectiv...
- Publication number 20080213496
- Publication date Sep 4, 2008
- APPLIED MATERIALS, INC.
- Jennifer Y. Sun
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Coated silicon carbide cermet used in a plasma reactor
- Publication number 20030198749
- Publication date Oct 23, 2003
- APPLIED MATERIALS, INC.
- Ananda H. Kumar
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
Plasma processing chamber having magnetic assembly and method
- Publication number 20030192646
- Publication date Oct 16, 2003
- APPLIED MATERIALS, INC.
- Robert W. Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Top gas feed lid for semiconductor processing chamber
- Publication number 20030037879
- Publication date Feb 27, 2003
- APPLIED MATERIALS, INC.
- Farahmand E. Askarinam
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Precision dielectric etch using hexafluorobutadiene
- Publication number 20030036287
- Publication date Feb 20, 2003
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High density plasma post-etch treatment for a dielectric etch process
- Publication number 20020074312
- Publication date Jun 20, 2002
- Eric Ou-Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adjusting DC bias voltage in plasma chamber
- Publication number 20010014540
- Publication date Aug 16, 2001
- APPLIED MATERIALS, INC.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS

Robert W. Wu

Person

Patents Grantslast 30 patents

Precision dielectric etch using hexafluorobutadiene

Yttrium oxide based surface coating for semiconductor IC processing...

Adjusting DC bias voltage in plasma chamber

Inductively coupled RF Plasma reactor having an overhead solenoidal...

Dielectric etch process reducing striations and maintaining critica...

Integrated post-etch treatment for a dielectric etch process

Plasma process for selectively etching oxide using fluoropropane or...

Inductively coupled parallel-plate plasma reactor with a conical dome

Adjusting DC bias voltage in plasma chamber

Tunable process for selectively etching oxide using fluoropropylene...

Method manifesting a wide process window and using hexafluoropropan...

Inductively coupled RF plasma reactor having an overhead solenoidal...

Independent gas feeds in a plasma reactor

Puncture resistant electrostatic chuck

Silane etching process

Bonded silicon carbide parts in a plasma reactor

Silicon carbide composite article particularly useful for plasma re...

Adjusting DC bias voltage in plasma chambers

Broad-band adjustable power ratio phase-inverting plasma reactor

Puncture resistant electrostatic chuck

Inductively enhanced reactive ion etching

Adjustable dc bias control in a plasma reactor

Self-cleaning polymer-free top electrode for parallel electrode etc...

Protective coating for dielectric material on wafer support used in...

Process for plasma etching of vias

Process for forming a via in an integrated circuit structure by etc...

Patents Applicationslast 30 patents

Method of coating semiconductor processing apparatus with protectiv...

Coated silicon carbide cermet used in a plasma reactor

Plasma processing chamber having magnetic assembly and method

Top gas feed lid for semiconductor processing chamber

Precision dielectric etch using hexafluorobutadiene

High density plasma post-etch treatment for a dielectric etch process

Adjusting DC bias voltage in plasma chamber