Robin Hsin-Kuo Chao

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Inner spacer formation for nanosheet transistors
- Patent number 12,046,680
- Issue date Jul 23, 2024
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,990,530
- Issue date May 21, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,842,998
- Issue date Dec 12, 2023
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,742,409
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Predictive multi-stage modelling for complex process control
- Patent number 11,568,101
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Scott Halle
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Machine learning enhanced optical-based screening for in-line wafer...
- Patent number 11,199,505
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,081,567
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Secure wafer inspection and identification
- Patent number 11,079,337
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Fee Li Lie
- G01 - MEASURING TESTING
Information Patent Grant
Vertical field-effect transistor including a fin having sidewalls w...
- Patent number 10,985,273
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Chun Wing Yeung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for vertical FET gate length control
- Patent number 10,978,576
- Issue date Apr 13, 2021
- ELPIS TECHNOLOGIES INC.
- Chi-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for quantification of process non uniformity using model-bas...
- Patent number 10,955,359
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Robin Hsin-Kuo Chao
- G01 - MEASURING TESTING
Information Patent Grant
Bottom channel isolation in nanosheet transistors
- Patent number 10,930,793
- Issue date Feb 23, 2021
- International Business Machines Corporation
- Robin H. Chao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Formation of dielectric layer as etch-stop for source and drain epi...
- Patent number 10,903,315
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom channel isolation in nanosheet transistors
- Patent number 10,804,410
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Robin H. Chao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-limiting and confining epitaxial nucleation
- Patent number 10,756,177
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting and confining epitaxial nucleation
- Patent number 10,756,178
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of dielectric layer as etch-stop for source and drain epi...
- Patent number 10,741,639
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Measuring defectivity by equipping model-less scatterometry with co...
- Patent number 10,692,203
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Dexin Kong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nanosheet transistor with robust source/drain isolation from substrate
- Patent number 10,658,459
- Issue date May 19, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolation in gate-all-around devices
- Patent number 10,636,694
- Issue date Apr 28, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming doped extension regions in a structure having su...
- Patent number 10,553,723
- Issue date Feb 4, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Remi Coquand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 10,541,239
- Issue date Jan 21, 2020
- International Business Machines Corporation
- Robin Hsin-Ku Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor including a fin having sidewalls w...
- Patent number 10,529,850
- Issue date Jan 7, 2020
- International Business Machines Corporation
- Chun Wing Yeung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for vertical FET gate length control
- Patent number 10,475,905
- Issue date Nov 12, 2019
- International Business Machines Corporation
- Chi-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolation in gate-all-around devices
- Patent number 10,453,736
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with robust source/drain isolation from substrate
- Patent number 10,431,651
- Issue date Oct 1, 2019
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned inner-spacer replacement process using implantation
- Patent number 10,411,120
- Issue date Sep 10, 2019
- International Business Machines Corporation
- Robin Hsin-Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Undercut control in isotropic wet etch processes
- Patent number 10,374,034
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Chi-Chun Liu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Long channels for transistors
- Patent number 10,355,103
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting and confining epitaxial nucleation
- Patent number 10,340,341
- Issue date Jul 2, 2019
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...
- Publication number 20250006734
- Publication date Jan 2, 2025
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH MULTI-LENGTH GATE ELECTRODE
- Publication number 20240421002
- Publication date Dec 19, 2024
- Intel Corporation
- Hwichan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON-BASED TRANSISTOR WITH UNIFORM OXIDE
- Publication number 20240355876
- Publication date Oct 24, 2024
- Intel Corporation
- Siddharth Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROUNDED NANORIBBONS WITH REGROWN CAPS
- Publication number 20240321962
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT
- Publication number 20240321887
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT
- Publication number 20240321859
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES
- Publication number 20240321987
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION
- Publication number 20240304619
- Publication date Sep 12, 2024
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION
- Publication number 20240304621
- Publication date Sep 12, 2024
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON-BASED TRANSISTORS WITH ETCH STOP LAYER TO ASSIST SUBFIN...
- Publication number 20240290835
- Publication date Aug 29, 2024
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS
- Publication number 20240290788
- Publication date Aug 29, 2024
- Intel Corporation
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES
- Publication number 20230282728
- Publication date Sep 7, 2023
- International Business Machines Corporation
- JINGYUN Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FORMATION FOR NANOSHEET TRANSISTORS
- Publication number 20230114163
- Publication date Apr 13, 2023
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-BIT MEMORY DEVICE WITH NANOWIRE STRUCTURE
- Publication number 20220399351
- Publication date Dec 15, 2022
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIPOLE THRESHOLD VOLTAGE TUNING FOR HIGH VOLTAGE TRANSISTOR STACKS
- Publication number 20220199472
- Publication date Jun 23, 2022
- Intel Corporation
- Robin Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTORS AND METHODS OF FABRICATION
- Publication number 20210408289
- Publication date Dec 30, 2021
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES
- Publication number 20210305407
- Publication date Sep 30, 2021
- International Business Machines Corporation
- JINGYUN Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Predictive Multi-Stage Modelling for Complex Process Control
- Publication number 20210049241
- Publication date Feb 18, 2021
- International Business Machines Corporation
- Scott Halle
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20200152631
- Publication date May 14, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF DIELECTRIC LAYER AS ETCH-STOP FOR SOURCE AND DRAIN EPI...
- Publication number 20200105868
- Publication date Apr 2, 2020
- International Business Machines Corporation
- Nicolas LOUBET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF DIELECTRIC LAYER AS ETCH-STOP FOR SOURCE AND DRAIN EPI...
- Publication number 20200105869
- Publication date Apr 2, 2020
- International Business Machines Corporation
- Nicolas LOUBET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MACHINE LEARNING ENHANCED OPTICAL-BASED SCREENING FOR IN-LINE WAFER...
- Publication number 20200064275
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Techniques for Vertical FET Gate Length Control
- Publication number 20200044055
- Publication date Feb 6, 2020
- International Business Machines Corporation
- Chi-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR INCLUDING A FIN HAVING SIDEWALLS W...
- Publication number 20200027984
- Publication date Jan 23, 2020
- International Business Machines Corporation
- CHUN WING YEUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH ROBUST SOURCE/DRAIN ISOLATION FROM SUBSTRATE
- Publication number 20200006476
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATION IN GATE-ALL-AROUND DEVICES
- Publication number 20190393076
- Publication date Dec 26, 2019
- International Business Machines Corporation
- ROBIN HSIN KUO CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR INCLUDING A FIN HAVING SIDEWALLS W...
- Publication number 20190326435
- Publication date Oct 24, 2019
- International Business Machines Corporation
- CHUN WING YEUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES
- Publication number 20190280102
- Publication date Sep 12, 2019
- International Business Machines Corporation
- JINGYUN Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-K DIELECTRIC INNER SPACER FOR GATE ALL AROUND TRANSISTORS
- Publication number 20190267463
- Publication date Aug 29, 2019
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Measuring Defectivity by Equipping Model-Less Scatterometry with Co...
- Publication number 20190259145
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Dexin Kong
- G06 - COMPUTING CALCULATING COUNTING

Robin Hsin-Kuo Chao

Person

Patents Grantslast 30 patents

Inner spacer formation for nanosheet transistors

Replacement-channel fabrication of III-V nanosheet devices

Semiconductor device and method of forming the semiconductor device

Replacement-channel fabrication of III-V nanosheet devices

Predictive multi-stage modelling for complex process control

Machine learning enhanced optical-based screening for in-line wafer...

Replacement-channel fabrication of III-V nanosheet devices

Secure wafer inspection and identification

Vertical field-effect transistor including a fin having sidewalls w...

Techniques for vertical FET gate length control

Method for quantification of process non uniformity using model-bas...

Bottom channel isolation in nanosheet transistors

Formation of dielectric layer as etch-stop for source and drain epi...

Bottom channel isolation in nanosheet transistors

Self-limiting and confining epitaxial nucleation

Self-limiting and confining epitaxial nucleation

Formation of dielectric layer as etch-stop for source and drain epi...

Measuring defectivity by equipping model-less scatterometry with co...

Nanosheet transistor with robust source/drain isolation from substrate

Dielectric isolation in gate-all-around devices

Method for forming doped extension regions in a structure having su...

Semiconductor device and method of forming the semiconductor device

Vertical field-effect transistor including a fin having sidewalls w...

Techniques for vertical FET gate length control

Dielectric isolation in gate-all-around devices

Nanosheet transistor with robust source/drain isolation from substrate

Self-aligned inner-spacer replacement process using implantation

Undercut control in isotropic wet etch processes

Long channels for transistors

Self-limiting and confining epitaxial nucleation

Patents Applicationslast 30 patents

PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...

INTEGRATED CIRCUIT DEVICE WITH MULTI-LENGTH GATE ELECTRODE

NANORIBBON-BASED TRANSISTOR WITH UNIFORM OXIDE

ROUNDED NANORIBBONS WITH REGROWN CAPS

INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT

INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT

LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES

INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION

FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION

NANORIBBON-BASED TRANSISTORS WITH ETCH STOP LAYER TO ASSIST SUBFIN...

METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS

REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES

INNER SPACER FORMATION FOR NANOSHEET TRANSISTORS

MULTI-BIT MEMORY DEVICE WITH NANOWIRE STRUCTURE

DIPOLE THRESHOLD VOLTAGE TUNING FOR HIGH VOLTAGE TRANSISTOR STACKS

NANOWIRE TRANSISTORS AND METHODS OF FABRICATION

REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES

Predictive Multi-Stage Modelling for Complex Process Control

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

FORMATION OF DIELECTRIC LAYER AS ETCH-STOP FOR SOURCE AND DRAIN EPI...

FORMATION OF DIELECTRIC LAYER AS ETCH-STOP FOR SOURCE AND DRAIN EPI...

MACHINE LEARNING ENHANCED OPTICAL-BASED SCREENING FOR IN-LINE WAFER...

Techniques for Vertical FET Gate Length Control

VERTICAL FIELD-EFFECT TRANSISTOR INCLUDING A FIN HAVING SIDEWALLS W...

NANOSHEET TRANSISTOR WITH ROBUST SOURCE/DRAIN ISOLATION FROM SUBSTRATE

DIELECTRIC ISOLATION IN GATE-ALL-AROUND DEVICES

VERTICAL FIELD-EFFECT TRANSISTOR INCLUDING A FIN HAVING SIDEWALLS W...

REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES

LOW-K DIELECTRIC INNER SPACER FOR GATE ALL AROUND TRANSISTORS

Measuring Defectivity by Equipping Model-Less Scatterometry with Co...