Roger S. Tsai

Person

Torrance, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Metal-semiconductor heterodimension field effect transistors (MESHF...
- Patent number 10,153,273
- Issue date Dec 11, 2018
- Northrop Grumman Systems Corporation
- Roger S. Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple layer side-gate FET switch
- Patent number 9,793,350
- Issue date Oct 17, 2017
- Northrop Grumman Systems Corporation
- Roger S. Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple layer quantum well FET with a side-gate
- Patent number 9,793,353
- Issue date Oct 17, 2017
- Northrop Gumman Systems Corporation
- Roger S. Tsai
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Yield enhancing vertical redundancy method for 3D wafer level packa...
- Patent number 9,425,110
- Issue date Aug 23, 2016
- Northrop Grumman Systems Corporation
- Jose G. Padilla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device having field...
- Patent number 7,800,132
- Issue date Sep 21, 2010
- Northrop Grumman Systems Corporation
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching mesa isolation in antimony-based compound semico...
- Patent number 7,135,411
- Issue date Nov 14, 2006
- Northrop Grumman Corporation
- Peter S. Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-physical modeling of HEMT high frequency small signal equivale...
- Patent number 6,772,400
- Issue date Aug 3, 2004
- Northrop Grumman Corporation
- Roger S. Tsai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Hybrid semi-physical and data fitting HEMT modeling approach for la...
- Patent number 6,711,723
- Issue date Mar 23, 2004
- Northrop Grumman Corporation
- Roger S. Tsai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for unique determination of FET equivalent circuit model par...
- Patent number 6,594,594
- Issue date Jul 15, 2003
- Northrop Grumman Corporation
- Roger Su-Tsung Tsai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
S-parameter microscopy for semiconductor devices
- Patent number 6,573,744
- Issue date Jun 3, 2003
- Northrop Grumman Corporation
- Roger S. Tsai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Process for forming a large area, high gate current HEMT diode
- Patent number 6,524,899
- Issue date Feb 25, 2003
- TRW Inc.
- Ronald W. Grundbacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedding parasitic model for pi-fet layouts
- Patent number 6,503,774
- Issue date Jan 7, 2003
- TRW Inc.
- Roger S. Tsai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Single-layer dielectric structure with rounded corners, and circuit...
- Patent number 6,396,679
- Issue date May 28, 2002
- TRW Inc.
- Ronald W. Grundbacher
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High electron mobility transistor semiconductor device having field...
- Publication number 20090108299
- Publication date Apr 30, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for etching mesa isolation in antimony-based compound semico...
- Publication number 20060035467
- Publication date Feb 16, 2006
- Peter S. Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semi-physical modeling of HEMT DC-to high frequency electrothermal...
- Publication number 20030055613
- Publication date Mar 20, 2003
- TRW, Inc.
- Roger S. Tsai
- G01 - MEASURING TESTING
Information Patent Application
S-parameter microscopy for semiconductor devices
- Publication number 20030042928
- Publication date Mar 6, 2003
- TRW, Inc.
- Roger S. Tsai
- G01 - MEASURING TESTING
Information Patent Application
Semi-physical modeling of HEMT high frequency noise equivalent circ...
- Publication number 20020116691
- Publication date Aug 22, 2002
- TRW, Inc.
- Roger S. Tsai
- G01 - MEASURING TESTING
Information Patent Application
Hybrid semi-physical and data fitting HEMT modeling approach for la...
- Publication number 20020083406
- Publication date Jun 27, 2002
- TRW, Inc.
- Roger S. Tsai
- G01 - MEASURING TESTING
Information Patent Application
Embedding parasitic model for pi-fet layouts
- Publication number 20020073387
- Publication date Jun 13, 2002
- TRW, Inc.
- Roger S. Tsai
- G01 - MEASURING TESTING
Information Patent Application
Process perturbation to measured-modeled method for semiconductor d...
- Publication number 20020055193
- Publication date May 9, 2002
- TRW, Inc.
- Roger S. Tsai
- G01 - MEASURING TESTING
Information Patent Application
Semi-physical modeling of HEMT high frequency small signal equivale...
- Publication number 20020007258
- Publication date Jan 17, 2002
- TRW, Inc.
- Roger S. Tsai
- G06 - COMPUTING CALCULATING COUNTING

Roger S. Tsai

Person

Patents Grantslast 30 patents

Metal-semiconductor heterodimension field effect transistors (MESHF...

Multiple layer side-gate FET switch

Multiple layer quantum well FET with a side-gate

Yield enhancing vertical redundancy method for 3D wafer level packa...

High electron mobility transistor semiconductor device having field...

Method for etching mesa isolation in antimony-based compound semico...

Semi-physical modeling of HEMT high frequency small signal equivale...

Hybrid semi-physical and data fitting HEMT modeling approach for la...

Method for unique determination of FET equivalent circuit model par...

S-parameter microscopy for semiconductor devices

Process for forming a large area, high gate current HEMT diode

Embedding parasitic model for pi-fet layouts

Single-layer dielectric structure with rounded corners, and circuit...

Patents Applicationslast 30 patents

High electron mobility transistor semiconductor device having field...

Method for etching mesa isolation in antimony-based compound semico...

Semi-physical modeling of HEMT DC-to high frequency electrothermal...

S-parameter microscopy for semiconductor devices

Semi-physical modeling of HEMT high frequency noise equivalent circ...

Hybrid semi-physical and data fitting HEMT modeling approach for la...

Embedding parasitic model for pi-fet layouts

Process perturbation to measured-modeled method for semiconductor d...

Semi-physical modeling of HEMT high frequency small signal equivale...