Roman Boschke

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a high-K gate dielectric above an STI r...
- Patent number 9,659,928
- Issue date May 23, 2017
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E-fuse design for high-K metal-gate technology
- Patent number 9,515,155
- Issue date Dec 6, 2016
- GLOBALFOUNDRIES Inc.
- Roman Boschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI transistor having drain and source regions of reduced length an...
- Patent number 9,450,073
- Issue date Sep 20, 2016
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified gate-first HKMG manufacturing flow
- Patent number 9,431,508
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sandwich silicidation for fully silicided gate formation
- Patent number 9,236,440
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Roman Boschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a strained transistor by stress memorization bas...
- Patent number 9,117,929
- Issue date Aug 25, 2015
- GLOBALFOUNDRIES Inc.
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for self-aligned removal of a high-K gate dielectric above a...
- Patent number 9,023,712
- Issue date May 5, 2015
- Advanced Micro Devices, Inc.
- Andy Wei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Transistor with embedded Si/Ge material having reduced offset and s...
- Patent number 9,006,835
- Issue date Apr 14, 2015
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a buried poly resistor
- Patent number 8,962,420
- Issue date Feb 24, 2015
- GLOBALFOUNDRIES Inc.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of defect rates in PFET transistors comprising a Si/Ge se...
- Patent number 8,939,765
- Issue date Jan 27, 2015
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicidation of semiconductor devices
- Patent number 8,846,467
- Issue date Sep 30, 2014
- GLOBALFOUNDRIES Inc.
- Roman Boschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods for forming a CMOS integ...
- Patent number 8,735,241
- Issue date May 27, 2014
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing deposition uniformity of a channel semiconductor alloy by...
- Patent number 8,722,486
- Issue date May 13, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced transistor performance of N-channel transistors by using a...
- Patent number 8,697,584
- Issue date Apr 15, 2014
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element formed in a crystalline substrate material an...
- Patent number 8,664,049
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon/germanium containing drain/source region...
- Patent number 8,652,913
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device with a buried insulating material having increased etch...
- Patent number 8,617,940
- Issue date Dec 31, 2013
- Advanced Micro Devices, Inc.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded Si/Ge material having reduced offset and s...
- Patent number 8,609,498
- Issue date Dec 17, 2013
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with boot shaped source/drain regions
- Patent number 8,497,180
- Issue date Jul 30, 2013
- GLOBALFOUNDRIES Inc.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage control in field effect transistors based on an implantatio...
- Patent number 8,481,404
- Issue date Jul 9, 2013
- GLOBALFOUNDRIES Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress adjustment in stressed dielectric materials of semiconductor...
- Patent number 8,426,262
- Issue date Apr 23, 2013
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating semiconductor devices
- Patent number 8,377,786
- Issue date Feb 19, 2013
- GLOBALFOUNDRIES, INC.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature monitoring in a semiconductor device by thermocouples d...
- Patent number 8,373,244
- Issue date Feb 12, 2013
- GLOBALFOUNDRIES Inc.
- Anthony Mowry
- G01 - MEASURING TESTING
Information Patent Grant
Strain enhancement in transistors comprising an embedded strain-ind...
- Patent number 8,338,892
- Issue date Dec 25, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried etch stop layer in trench isolation structures for superior...
- Patent number 8,334,573
- Issue date Dec 18, 2012
- GLOBALFOUNDRIES Inc.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising eFUSES of enhanced programming effi...
- Patent number 8,268,679
- Issue date Sep 18, 2012
- GLOBALFOUNDRIES, INC.
- Oliver Aubel
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device comprising a silicon/germanium resistor
- Patent number 8,193,066
- Issue date Jun 5, 2012
- GLOBALFOUNDRIES Inc.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device having a substrate diode formed by reduced implantation...
- Patent number 8,097,519
- Issue date Jan 17, 2012
- Advanced Micro Devices, Inc.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a strained transistor by stress memorization bas...
- Patent number 7,964,458
- Issue date Jun 21, 2011
- GLOBALFOUNDRIES Inc.
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing stress transfer efficiency in a transistor by reducing s...
- Patent number 7,923,338
- Issue date Apr 12, 2011
- GLOBALFOUNDRIES Inc.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC ABOVE AN STI REGION
- Publication number 20150187765
- Publication date Jul 2, 2015
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL E-FUSE DESIGN FOR HIGH-K METAL-GATE TECHNOLOGY
- Publication number 20150179753
- Publication date Jun 25, 2015
- GLOBALFOUNDRIES Inc.
- Roman Boschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH STRAINED LAYER
- Publication number 20150179740
- Publication date Jun 25, 2015
- GLOBAL FOUNDRIES Inc.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SANDWICH SILICIDATION FOR FULLY SILICIDED GATE FORMATION
- Publication number 20150162414
- Publication date Jun 11, 2015
- GLOBALFOUNDRIES Inc.
- Roman Boschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMPLIFIED GATE-FIRST HKMG MANUFACTURING FLOW
- Publication number 20150097252
- Publication date Apr 9, 2015
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED STRAIN-INDUCING MATERIAL FORMED IN CAVITIE...
- Publication number 20140246696
- Publication date Sep 4, 2014
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING REDUCED OFFSET AND S...
- Publication number 20140131805
- Publication date May 15, 2014
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20130037866
- Publication date Feb 14, 2013
- GLOBALFOUNDRIES INC.
- Hans-Jürgen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH BOOT SHAPED SOURCE/DRAIN REGIONS
- Publication number 20130032864
- Publication date Feb 7, 2013
- GLOBALFOUNDRIES INC.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20120202326
- Publication date Aug 9, 2012
- GLOBALFOUNDRIES INC.
- Stephan-Detlef KRONHOLZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of Defect Rates in PFET Transistors Comprising a Silicon/...
- Publication number 20120161249
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor With Embedded Si/Ge Material Having Reduced Offset and S...
- Publication number 20120001254
- Publication date Jan 5, 2012
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of Defect Rates in PFET Transistors Comprising a Si/Ge Se...
- Publication number 20110291163
- Publication date Dec 1, 2011
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Strained Transistor by Stress Memorization Bas...
- Publication number 20110223733
- Publication date Sep 15, 2011
- GLOBALFOUNDRIES INC.
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING DEPOSITION UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY...
- Publication number 20110156172
- Publication date Jun 30, 2011
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-BASED SEMICONDUCTOR DEVICE COMPRISING eFUSES FORMED BY AN E...
- Publication number 20110156857
- Publication date Jun 30, 2011
- Andreas Kurz
- G11 - INFORMATION STORAGE
Information Patent Application
STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-IND...
- Publication number 20110101469
- Publication date May 5, 2011
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED ETCH STOP LAYER IN TRENCH ISOLATION STRUCTURES FOR SUPERIOR...
- Publication number 20110049637
- Publication date Mar 3, 2011
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ADJUSTMENT IN STRESSED DIELECTRIC MATERIALS OF SEMICONDUCTOR...
- Publication number 20110049641
- Publication date Mar 3, 2011
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CONTROL IN FIELD EFFECT TRANSISTORS BASED ON AN IMPLANTATIO...
- Publication number 20110024846
- Publication date Feb 3, 2011
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AN...
- Publication number 20100327358
- Publication date Dec 30, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AN...
- Publication number 20100289114
- Publication date Nov 18, 2010
- Stephan KRONHOLZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI DEVICE WITH A BURIED INSULATING MATERIAL HAVING INCREASED ETCH...
- Publication number 20100163994
- Publication date Jul 1, 2010
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING eFUSES OF ENHANCED PROGRAMMING EFFI...
- Publication number 20100107403
- Publication date May 6, 2010
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELEC...
- Publication number 20100090321
- Publication date Apr 15, 2010
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A BURIED POLY RESISTOR
- Publication number 20100078645
- Publication date Apr 1, 2010
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A SILICON/GERMANIUM RESISTOR
- Publication number 20100025772
- Publication date Feb 4, 2010
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING STRESS TRANSFER EFFICIENCY IN A TRANSISTOR BY REDUCING S...
- Publication number 20090246927
- Publication date Oct 1, 2009
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY THERMOCOUPLES D...
- Publication number 20090166794
- Publication date Jul 2, 2009
- Anthony Mowry
- G01 - MEASURING TESTING
Information Patent Application
SOI DEVICE HAVING A SUBSTRATE DIODE FORMED BY REDUCED IMPLANTATION...
- Publication number 20090111223
- Publication date Apr 30, 2009
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS

Roman Boschke

Person

Patents Grantslast 30 patents

Semiconductor device having a high-K gate dielectric above an STI r...

E-fuse design for high-K metal-gate technology

SOI transistor having drain and source regions of reduced length an...

Simplified gate-first HKMG manufacturing flow

Sandwich silicidation for fully silicided gate formation

Method for forming a strained transistor by stress memorization bas...

Method for self-aligned removal of a high-K gate dielectric above a...

Transistor with embedded Si/Ge material having reduced offset and s...

Semiconductor device comprising a buried poly resistor

Reduction of defect rates in PFET transistors comprising a Si/Ge se...

Silicidation of semiconductor devices

Semiconductor device structure and methods for forming a CMOS integ...

Enhancing deposition uniformity of a channel semiconductor alloy by...

Enhanced transistor performance of N-channel transistors by using a...

Semiconductor element formed in a crystalline substrate material an...

Method for forming silicon/germanium containing drain/source region...

SOI device with a buried insulating material having increased etch...

Transistor with embedded Si/Ge material having reduced offset and s...

Transistor with boot shaped source/drain regions

Leakage control in field effect transistors based on an implantatio...

Stress adjustment in stressed dielectric materials of semiconductor...

Methods for fabricating semiconductor devices

Temperature monitoring in a semiconductor device by thermocouples d...

Strain enhancement in transistors comprising an embedded strain-ind...

Buried etch stop layer in trench isolation structures for superior...

Semiconductor device comprising eFUSES of enhanced programming effi...

Semiconductor device comprising a silicon/germanium resistor

SOI device having a substrate diode formed by reduced implantation...

Method for forming a strained transistor by stress memorization bas...

Increasing stress transfer efficiency in a transistor by reducing s...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC ABOVE AN STI REGION

NOVEL E-FUSE DESIGN FOR HIGH-K METAL-GATE TECHNOLOGY

TRANSISTOR DEVICE WITH STRAINED LAYER

SANDWICH SILICIDATION FOR FULLY SILICIDED GATE FORMATION

SIMPLIFIED GATE-FIRST HKMG MANUFACTURING FLOW

TRANSISTOR WITH EMBEDDED STRAIN-INDUCING MATERIAL FORMED IN CAVITIE...

TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING REDUCED OFFSET AND S...

METHOD OF FORMING A SEMICONDUCTOR DEVICE

TRANSISTOR WITH BOOT SHAPED SOURCE/DRAIN REGIONS

METHODS FOR FABRICATING SEMICONDUCTOR DEVICES

Reduction of Defect Rates in PFET Transistors Comprising a Silicon/...

Transistor With Embedded Si/Ge Material Having Reduced Offset and S...

Reduction of Defect Rates in PFET Transistors Comprising a Si/Ge Se...

Method for Forming a Strained Transistor by Stress Memorization Bas...

ENHANCING DEPOSITION UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY...

SILICON-BASED SEMICONDUCTOR DEVICE COMPRISING eFUSES FORMED BY AN E...

STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-IND...

BURIED ETCH STOP LAYER IN TRENCH ISOLATION STRUCTURES FOR SUPERIOR...

STRESS ADJUSTMENT IN STRESSED DIELECTRIC MATERIALS OF SEMICONDUCTOR...

LEAKAGE CONTROL IN FIELD EFFECT TRANSISTORS BASED ON AN IMPLANTATIO...

SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AN...

SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AN...

SOI DEVICE WITH A BURIED INSULATING MATERIAL HAVING INCREASED ETCH...

SEMICONDUCTOR DEVICE COMPRISING eFUSES OF ENHANCED PROGRAMMING EFFI...

HIGH-K ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELEC...

SEMICONDUCTOR DEVICE COMPRISING A BURIED POLY RESISTOR

SEMICONDUCTOR DEVICE COMPRISING A SILICON/GERMANIUM RESISTOR

INCREASING STRESS TRANSFER EFFICIENCY IN A TRANSISTOR BY REDUCING S...

TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY THERMOCOUPLES D...

SOI DEVICE HAVING A SUBSTRATE DIODE FORMED BY REDUCED IMPLANTATION...