Ronghua Zhu

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Capacitor with an electrode well
- Patent number 11,695,013
- Issue date Jul 4, 2023
- NXP USA, INC.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with an improved breakdown performance
- Patent number 11,610,978
- Issue date Mar 21, 2023
- NXP B.V.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Screening method and apparatus for detecting deep trench isolation...
- Patent number 11,448,690
- Issue date Sep 20, 2022
- NXP USA, INC.
- Laurent Segarra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for extension of operation voltage
- Patent number 11,404,539
- Issue date Aug 2, 2022
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with diode coupled isolation ring
- Patent number 11,127,856
- Issue date Sep 21, 2021
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation and substrate connection on SOI
- Patent number 11,127,622
- Issue date Sep 21, 2021
- NXP USA, INC.
- James Gordon Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench and junction hybrid isolation
- Patent number 10,944,001
- Issue date Mar 9, 2021
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making high voltage transistors insensitive to needle de...
- Patent number 10,825,717
- Issue date Nov 3, 2020
- NXP B.V.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with drain active area
- Patent number 10,672,903
- Issue date Jun 2, 2020
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconducting devices with lightly-...
- Patent number 10,418,483
- Issue date Sep 17, 2019
- NXP B.V.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electro-static discharge protection device and method of making
- Patent number 10,297,590
- Issue date May 21, 2019
- NXP USA, INC.
- Jean-Philippe Laine
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Partially biased isolation in semiconductor device
- Patent number 10,297,676
- Issue date May 21, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device isolation with RESURF layer arrangement
- Patent number 10,177,252
- Issue date Jan 8, 2019
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device isolation via depleted coupling layer
- Patent number 9,941,350
- Issue date Apr 10, 2018
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making
- Patent number 9,905,687
- Issue date Feb 27, 2018
- NXP USA, INC.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making
- Patent number 9,871,135
- Issue date Jan 16, 2018
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alternating source region arrangement
- Patent number 9,831,338
- Issue date Nov 28, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused MOSFET with isolation region
- Patent number 9,761,707
- Issue date Sep 12, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage deep trench capacitor
- Patent number 9,397,233
- Issue date Jul 19, 2016
- NORTH STAR INNOVATIONS INC.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing methods for laterally diffused metal oxide semiconduc...
- Patent number 9,209,277
- Issue date Dec 8, 2015
- Freescale Semiconductor Inc.
- Tahir A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor field effect transistor with reduced surf...
- Patent number 9,196,680
- Issue date Nov 24, 2015
- Maxim Integrated Products, Inc.
- Vishnu Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor field effect transistor with reduced surf...
- Patent number 9,196,681
- Issue date Nov 24, 2015
- Maxim Integrated Products, Inc.
- Vishnu Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated MOS power transistor with body extension region for poly...
- Patent number 8,969,958
- Issue date Mar 3, 2015
- Maxim Integrated Products, Inc.
- Vishnu Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated MOS power transistor with poly field plate extension for...
- Patent number 8,963,241
- Issue date Feb 24, 2015
- Maxim Integrated Products, Inc.
- Vishnu Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with enhanced safe operating area (SOA) and method therefor
- Patent number 8,907,419
- Issue date Dec 9, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Tahir A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally double diffused metal oxide semiconductor transistors hav...
- Patent number 8,816,434
- Issue date Aug 26, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Bernhard H. Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making laterally double diffused metal oxide semiconduct...
- Patent number 8,623,732
- Issue date Jan 7, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Bernhard H. Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor device
- Patent number 8,384,184
- Issue date Feb 26, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Tahir A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 8,344,472
- Issue date Jan 1, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Vishnu K. Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with capcitively coupled floating buried layer
- Patent number 8,338,872
- Issue date Dec 25, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Vishnu K. Khemka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ISOLATION STRUCTURE FOR AN ACTIVE COMPONENT
- Publication number 20240128316
- Publication date Apr 18, 2024
- NXP B.V.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SEMICONDUCTOR RESISTOR
- Publication number 20230395646
- Publication date Dec 7, 2023
- NXP USA, Inc.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH AN ELECTRODE WELL
- Publication number 20230138580
- Publication date May 4, 2023
- NXP USA, Inc.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS With An Improved Breakdown Performance
- Publication number 20220293771
- Publication date Sep 15, 2022
- NXP B.V.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for Extension of Operation Voltage
- Publication number 20220069077
- Publication date Mar 3, 2022
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCREENING METHOD AND APPARATUS FOR DETECTING DEEP TRENCH ISOLATION...
- Publication number 20220003812
- Publication date Jan 6, 2022
- NXP USA, Inc.
- Laurent Segarra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Trench Isolation And Substrate Connection on SOI
- Publication number 20210217655
- Publication date Jul 15, 2021
- NXP USA, Inc.
- James Gordon Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH DIODE COUPLED ISOLATION RING
- Publication number 20200328304
- Publication date Oct 15, 2020
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DRAIN ACTIVE AREA
- Publication number 20200035827
- Publication date Jan 30, 2020
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTING DEVICES WITH LIGHTLY-...
- Publication number 20180151723
- Publication date May 31, 2018
- NXP B.V.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ISOLATION WITH RESURF LAYER ARRANGEMENT
- Publication number 20180130903
- Publication date May 10, 2018
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING
- Publication number 20170352756
- Publication date Dec 7, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICE
- Publication number 20170077296
- Publication date Mar 16, 2017
- NXP USA, Inc.
- Hongning YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTORS HAV...
- Publication number 20140103431
- Publication date Apr 17, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Bernhard H. Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHODS FOR LATERALLY DIFFUSED METAL OXIDE SEMICONDUC...
- Publication number 20130137224
- Publication date May 30, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Tahir A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH ENHANCED SAFE OPERATING AREA (SOA) AND METHOD THEREFOR
- Publication number 20130009243
- Publication date Jan 10, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Tahir A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD
- Publication number 20120061758
- Publication date Mar 15, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Tahir A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Guard Ring Integrated LDMOS
- Publication number 20120018804
- Publication date Jan 26, 2012
- Vishnu K. Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR HAVI...
- Publication number 20110309442
- Publication date Dec 22, 2011
- Bernhard H. Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH ENHANCED SAFE OPERATING AREA (SOA) AND METHOD THEREFOR
- Publication number 20110266614
- Publication date Nov 3, 2011
- Tahir A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20110241083
- Publication date Oct 6, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Vishnu K. Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH CAPCITIVELY COUPLED FLOATING BURIED LAYER
- Publication number 20110241092
- Publication date Oct 6, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Vishnu K. Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INCREASED SNAPBACK VOLTAGE
- Publication number 20110101425
- Publication date May 5, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Bernhard H. Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS CAPACITOR STRUCTURES
- Publication number 20110024813
- Publication date Feb 3, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Tahir A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Deep Trench Capacitor
- Publication number 20100230736
- Publication date Sep 16, 2010
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Current Path LDMOSFET with Graded PBL for Ultra High Voltage S...
- Publication number 20100025756
- Publication date Feb 4, 2010
- Yue Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINEARITY CAPACITOR STRUCTURE AND METHOD
- Publication number 20090174030
- Publication date Jul 9, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Tahir A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage deep trench capacitor
- Publication number 20080293211
- Publication date Nov 27, 2008
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE INCLUDING A SOURCE WITH ALTERNATING P-TYPE AND N-TYPE...
- Publication number 20080265291
- Publication date Oct 30, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR SCHOTTKY DIODE AND METHOD
- Publication number 20080191305
- Publication date Aug 14, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Vishnu K. Khemka
- H01 - BASIC ELECTRIC ELEMENTS

Ronghua Zhu

Person

Patents Grantslast 30 patents

Capacitor with an electrode well

LDMOS with an improved breakdown performance

Screening method and apparatus for detecting deep trench isolation...

Apparatus for extension of operation voltage

LDMOS with diode coupled isolation ring

Deep trench isolation and substrate connection on SOI

Deep trench and junction hybrid isolation

Method for making high voltage transistors insensitive to needle de...

Semiconductor device with drain active area

Laterally diffused metal oxide semiconducting devices with lightly-...

Electro-static discharge protection device and method of making

Partially biased isolation in semiconductor device

Semiconductor device isolation with RESURF layer arrangement

Semiconductor device isolation via depleted coupling layer

Semiconductor device and method of making

Semiconductor device and method of making

Alternating source region arrangement

Laterally diffused MOSFET with isolation region

High voltage deep trench capacitor

Manufacturing methods for laterally diffused metal oxide semiconduc...

Metal oxide semiconductor field effect transistor with reduced surf...

Metal oxide semiconductor field effect transistor with reduced surf...

Integrated MOS power transistor with body extension region for poly...

Integrated MOS power transistor with poly field plate extension for...

LDMOS with enhanced safe operating area (SOA) and method therefor

Laterally double diffused metal oxide semiconductor transistors hav...

Methods of making laterally double diffused metal oxide semiconduct...

Laterally diffused metal oxide semiconductor device

Semiconductor device and method

Electronic device with capcitively coupled floating buried layer

Patents Applicationslast 30 patents

ISOLATION STRUCTURE FOR AN ACTIVE COMPONENT

POLYCRYSTALLINE SEMICONDUCTOR RESISTOR

CAPACITOR WITH AN ELECTRODE WELL

LDMOS With An Improved Breakdown Performance

Apparatus for Extension of Operation Voltage

SCREENING METHOD AND APPARATUS FOR DETECTING DEEP TRENCH ISOLATION...

Deep Trench Isolation And Substrate Connection on SOI

LDMOS WITH DIODE COUPLED ISOLATION RING

SEMICONDUCTOR DEVICE WITH DRAIN ACTIVE AREA

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTING DEVICES WITH LIGHTLY-...

SEMICONDUCTOR DEVICE ISOLATION WITH RESURF LAYER ARRANGEMENT

SEMICONDUCTOR DEVICE AND METHOD OF MAKING

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICE

LATERALLY DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTORS HAV...

MANUFACTURING METHODS FOR LATERALLY DIFFUSED METAL OXIDE SEMICONDUC...

LDMOS WITH ENHANCED SAFE OPERATING AREA (SOA) AND METHOD THEREFOR

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Guard Ring Integrated LDMOS

LATERALLY DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR HAVI...

LDMOS WITH ENHANCED SAFE OPERATING AREA (SOA) AND METHOD THEREFOR

SEMICONDUCTOR DEVICE AND METHOD

ELECTRONIC DEVICE WITH CAPCITIVELY COUPLED FLOATING BURIED LAYER

SEMICONDUCTOR DEVICE WITH INCREASED SNAPBACK VOLTAGE

MOS CAPACITOR STRUCTURES

High Voltage Deep Trench Capacitor

Dual Current Path LDMOSFET with Graded PBL for Ultra High Voltage S...

LINEARITY CAPACITOR STRUCTURE AND METHOD

High voltage deep trench capacitor

MOSFET DEVICE INCLUDING A SOURCE WITH ALTERNATING P-TYPE AND N-TYPE...

BIPOLAR SCHOTTKY DIODE AND METHOD