Rongming CHU

Person

Newbury Park, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Doped gate dielectrics materials
- Patent number 11,437,485
- Issue date Sep 6, 2022
- HRL Laboratories, LLC
- Yu Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ fabrication of horizontal nanowires and device using same
- Patent number 11,361,965
- Issue date Jun 14, 2022
- HRL Laboratories, LLC
- Danny M. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride field-effect transistor with dual gates
- Patent number 11,183,573
- Issue date Nov 23, 2021
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital alloy based back barrier for P-channel nitride transistors
- Patent number 10,943,998
- Issue date Mar 9, 2021
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having in situ formed horizontal nanowire stru...
- Patent number 10,937,650
- Issue date Mar 2, 2021
- HRL Laboratories, LLC
- Danny M. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET transistor on a III-V material structure with substrate transfer
- Patent number 10,916,647
- Issue date Feb 9, 2021
- HRL Laboratories, LLC
- Zijian “Ray” Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low modulation-voltage cryogenic diode structure
- Patent number 10,910,793
- Issue date Feb 2, 2021
- HRL Laboratories, LLC
- Daniel Yap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped gate dielectric materials
- Patent number 10,903,333
- Issue date Jan 26, 2021
- HRL Laboratories, LLC
- Yu Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride field-effect transistor with dual gates
- Patent number 10,692,984
- Issue date Jun 23, 2020
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-on-sapphire monolithically integrated power converter
- Patent number 10,659,032
- Issue date May 19, 2020
- HRL Laboratories, LLC
- Brian Hughes
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Digital alloy based back barrier for P-channel nitride transistors
- Patent number 10,651,306
- Issue date May 12, 2020
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ fabrication of horizontal nanowires and device using same
- Patent number 10,535,518
- Issue date Jan 14, 2020
- HRL Laboratories, LLC
- Danny M. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etched spin-qubit for high temperature operation
- Patent number 10,387,792
- Issue date Aug 20, 2019
- HRL Laboratories, LLC
- Thaddeus D. Ladd
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Lateral GaN PN junction diode enabled by sidewall regrowth
- Patent number 10,283,358
- Issue date May 7, 2019
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride field-effect transistor with dual gates
- Patent number 10,276,712
- Issue date Apr 30, 2019
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET transistor on a III-V material structure with substrate transfer
- Patent number 10,263,104
- Issue date Apr 16, 2019
- HRL Laboratories, LLC
- Zijian “Ray” Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride transistor with enhanced doping in base layer
- Patent number 10,181,400
- Issue date Jan 15, 2019
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-on-sapphire monolithically integrated power converter
- Patent number 10,153,761
- Issue date Dec 11, 2018
- HRL Laboratories, LLC
- Brian Hughes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel barrier schottky
- Patent number 10,134,851
- Issue date Nov 20, 2018
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped field plate wide bandgap field-effect transistor and method
- Patent number 9,929,243
- Issue date Mar 27, 2018
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel barrier schottky
- Patent number 9,899,482
- Issue date Feb 20, 2018
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor with trench gate
- Patent number 9,865,725
- Issue date Jan 9, 2018
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride P-channel transistor
- Patent number 9,812,532
- Issue date Nov 7, 2017
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor with engineered substrate
- Patent number 9,773,884
- Issue date Sep 26, 2017
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor with enhanced doping in base layer
- Patent number 9,761,709
- Issue date Sep 12, 2017
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor structure having a passiva...
- Patent number 9,761,438
- Issue date Sep 12, 2017
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current aperture diode and method of fabricating the same
- Patent number 9,691,909
- Issue date Jun 27, 2017
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ta based ohmic contact
- Patent number 9,646,839
- Issue date May 9, 2017
- HRL Laboratories, LLC
- Mary Y. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride complementary transistors
- Patent number 9,559,012
- Issue date Jan 31, 2017
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-based fabrication process for stepped field-plate wide-bandgap
- Patent number 9,419,122
- Issue date Aug 16, 2016
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Doped Gate Dielectrics Materials
- Publication number 20210151578
- Publication date May 20, 2021
- HRL LABORATORIES, LLC
- Yu CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE FIELD-EFFECT TRANSISTOR WITH DUAL GATES
- Publication number 20200273958
- Publication date Aug 27, 2020
- HRL Laboratories, LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIGITAL ALLOY BASED BACK BARRIER FOR P-CHANNEL NITRIDE TRANSISTORS
- Publication number 20200227542
- Publication date Jul 16, 2020
- HRL LABORATORIES, LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW MODULATION-VOLTAGE CRYOGENIC DIODE STRUCTURE
- Publication number 20200203931
- Publication date Jun 25, 2020
- HRL LABORATORIES, LLC
- Daniel Yap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE FIELD-EFFECT TRANSISTOR WITH DUAL GATES
- Publication number 20190189762
- Publication date Jun 20, 2019
- HRL LABORATORIES, LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-ON-SAPPHIRE MONOLITHICALLY INTEGRATED POWER CONVERTER
- Publication number 20190165776
- Publication date May 30, 2019
- HRL LABORATORIES, LLC
- Brian HUGHES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET TRANSISTOR ON A III-V MATERIAL STRUCTURE WITH SUBSTRATE TRANSFER
- Publication number 20190165154
- Publication date May 30, 2019
- HRL LABORATORIES, LLC
- Zijian "Ray" LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIGITAL ALLOY BASED BACK BARRIER FOR P-CHANNEL NITRIDE TRANSISTORS
- Publication number 20190067464
- Publication date Feb 28, 2019
- HRL LABORATORIES, LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL GAN PN JUNCTION DIODE ENABLED BY SIDEWALL REGROWTH
- Publication number 20180337042
- Publication date Nov 22, 2018
- HRL LABORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL BARRIER SCHOTTKY
- Publication number 20180114837
- Publication date Apr 26, 2018
- HRL LABORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doped Gate Dielectric Materials
- Publication number 20180097081
- Publication date Apr 5, 2018
- HRL LABORATORIES, LLC
- Yu CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR WITH ENHANCED DOPING IN BASE LAYER
- Publication number 20170263769
- Publication date Sep 14, 2017
- HRL LABORATORIES LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE FIELD-EFFECT TRANSISTOR WITH DUAL GATES
- Publication number 20170148912
- Publication date May 25, 2017
- HRL LABORATORIES, LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-ON-SAPPHIRE MONOLITHICALLY INTEGRATED POWER CONVERTER
- Publication number 20170104477
- Publication date Apr 13, 2017
- HRL LABORATORIES, LLC
- Brian HUGHES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL BARRIER SCHOTTKY
- Publication number 20170047453
- Publication date Feb 16, 2017
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Transistor With Trench Gate
- Publication number 20160308040
- Publication date Oct 20, 2016
- HRL LABORATORIES, LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TA BASED OHMIC CONTACT
- Publication number 20160276161
- Publication date Sep 22, 2016
- HRL LABORATORIES, LLC
- Mary Y. CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR WITH ENHANCED DOPING IN BASE LAYER
- Publication number 20160064555
- Publication date Mar 3, 2016
- HRL LABORATORIES LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE INSULATING-GATE TRANSISTORS WITH PASSIVATION
- Publication number 20150349117
- Publication date Dec 3, 2015
- HRL LABORATORIES LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT APERTURE DIODE AND METHOD OF FABRICATING THE SAME
- Publication number 20150318373
- Publication date Nov 5, 2015
- HRL LABORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET TRANSISTOR ON A III-V MATERIAL STRUCTURE WITH SUBSTRATE TRANSFER
- Publication number 20150311330
- Publication date Oct 29, 2015
- HRL LABORATORIES, LLC
- Zijian "Ray" LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF THE INDUCTANCE OF POWER LOOP AND GATE LOOP IN A HALF-B...
- Publication number 20150116022
- Publication date Apr 30, 2015
- HRL LABORATORIES, LLC
- Brian Hughes
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
III-NITRIDE TRANSISTOR WITH ENGINEERED SUBSTRATE
- Publication number 20140264361
- Publication date Sep 18, 2014
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT APERTURE DIODE AND METHOD OF FABRICATING SAME
- Publication number 20130341632
- Publication date Dec 26, 2013
- HRL LABORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND ME...
- Publication number 20130328061
- Publication date Dec 12, 2013
- HRL LABORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Metal Insulator Semiconductor Field effect Transistor
- Publication number 20130026495
- Publication date Jan 31, 2013
- HRL LOBORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALGaN/GaN HYBRID MOS-HFET
- Publication number 20130001646
- Publication date Jan 3, 2013
- HRL LABORATORIES, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS

Rongming CHU

Person

Patents Grantslast 30 patents

Doped gate dielectrics materials

In situ fabrication of horizontal nanowires and device using same

III-nitride field-effect transistor with dual gates

Digital alloy based back barrier for P-channel nitride transistors

Semiconductor device having in situ formed horizontal nanowire stru...

FET transistor on a III-V material structure with substrate transfer

Low modulation-voltage cryogenic diode structure

Doped gate dielectric materials

III-nitride field-effect transistor with dual gates

GaN-on-sapphire monolithically integrated power converter

Digital alloy based back barrier for P-channel nitride transistors

In situ fabrication of horizontal nanowires and device using same

Etched spin-qubit for high temperature operation

Lateral GaN PN junction diode enabled by sidewall regrowth

III-nitride field-effect transistor with dual gates

FET transistor on a III-V material structure with substrate transfer

III-Nitride transistor with enhanced doping in base layer

GaN-on-sapphire monolithically integrated power converter

Tunnel barrier schottky

Stepped field plate wide bandgap field-effect transistor and method

Tunnel barrier schottky

III-nitride transistor with trench gate

III-nitride P-channel transistor

III-nitride transistor with engineered substrate

III-nitride transistor with enhanced doping in base layer

Method for manufacturing a semiconductor structure having a passiva...

Current aperture diode and method of fabricating the same

Ta based ohmic contact

Gallium nitride complementary transistors

Etch-based fabrication process for stepped field-plate wide-bandgap

Patents Applicationslast 30 patents

Doped Gate Dielectrics Materials

III-NITRIDE FIELD-EFFECT TRANSISTOR WITH DUAL GATES

DIGITAL ALLOY BASED BACK BARRIER FOR P-CHANNEL NITRIDE TRANSISTORS

LOW MODULATION-VOLTAGE CRYOGENIC DIODE STRUCTURE

III-NITRIDE FIELD-EFFECT TRANSISTOR WITH DUAL GATES

GaN-ON-SAPPHIRE MONOLITHICALLY INTEGRATED POWER CONVERTER

FET TRANSISTOR ON A III-V MATERIAL STRUCTURE WITH SUBSTRATE TRANSFER

DIGITAL ALLOY BASED BACK BARRIER FOR P-CHANNEL NITRIDE TRANSISTORS

LATERAL GAN PN JUNCTION DIODE ENABLED BY SIDEWALL REGROWTH

TUNNEL BARRIER SCHOTTKY

Doped Gate Dielectric Materials

III-NITRIDE TRANSISTOR WITH ENHANCED DOPING IN BASE LAYER

III-NITRIDE FIELD-EFFECT TRANSISTOR WITH DUAL GATES

GaN-ON-SAPPHIRE MONOLITHICALLY INTEGRATED POWER CONVERTER

TUNNEL BARRIER SCHOTTKY

III-Nitride Transistor With Trench Gate

TA BASED OHMIC CONTACT

III-NITRIDE TRANSISTOR WITH ENHANCED DOPING IN BASE LAYER

III-NITRIDE INSULATING-GATE TRANSISTORS WITH PASSIVATION

CURRENT APERTURE DIODE AND METHOD OF FABRICATING THE SAME

FET TRANSISTOR ON A III-V MATERIAL STRUCTURE WITH SUBSTRATE TRANSFER

REDUCTION OF THE INDUCTANCE OF POWER LOOP AND GATE LOOP IN A HALF-B...

III-NITRIDE TRANSISTOR WITH ENGINEERED SUBSTRATE

CURRENT APERTURE DIODE AND METHOD OF FABRICATING SAME

NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND ME...

III-Nitride Metal Insulator Semiconductor Field effect Transistor

ALGaN/GaN HYBRID MOS-HFET