Rongsheng Yang

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Image sensor pixel cell with switched deep trench isolation structure
- Patent number 9,496,304
- Issue date Nov 15, 2016
- OmniVision Technologies, Inc.
- Sing-Chung Hu
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Image sensor pixel cell with switched deep trench isolation structure
- Patent number 9,054,007
- Issue date Jun 9, 2015
- OmniVision Technologies, Inc.
- Sing-Chung Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside-illuminated (BSI) image sensor with reduced blooming and e...
- Patent number 8,946,795
- Issue date Feb 3, 2015
- OmniVision Technologies, Inc.
- Gang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer image sensor pixel structure for reducing crosstalk
- Patent number 8,330,195
- Issue date Dec 11, 2012
- OmniVision Technologies, Inc.
- Vincent Venezia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of implanting dopant into channel regions
- Patent number 8,273,619
- Issue date Sep 25, 2012
- Micron Technology, Inc.
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS image sensor with peripheral trench capacitor
- Patent number 8,253,178
- Issue date Aug 28, 2012
- OmniVision Technologies, Inc.
- Rongsheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer image sensor pixel structure for reducing crosstalk
- Patent number 7,875,918
- Issue date Jan 25, 2011
- OmniVision Technologies, Inc.
- Vincent Venezia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of implanting dopant into channel regions
- Patent number 7,767,514
- Issue date Aug 3, 2010
- Micron Technology, Inc.
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming threshold voltage implant regions
- Patent number 7,674,670
- Issue date Mar 9, 2010
- Micron Technology, Inc.
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming capacitor structures
- Patent number 7,638,392
- Issue date Dec 29, 2009
- Micron Technology, Inc.
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming threshold voltage implant regions
- Patent number 7,442,600
- Issue date Oct 28, 2008
- Micron Technology, Inc.
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively doped trench device isolation
- Patent number 7,259,442
- Issue date Aug 21, 2007
- Micron Technology, Inc.
- David Y. Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure having reduced transistor leakage attributes
- Patent number 7,157,324
- Issue date Jan 2, 2007
- Micron Technology, Inc.
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure having reduced transistor leakage attributes
- Patent number 7,105,899
- Issue date Sep 12, 2006
- Micron Technology, Inc.
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized array threshold voltage implant to enhance charge storage...
- Patent number 6,815,287
- Issue date Nov 9, 2004
- Micron Technology, Inc.
- Rongsheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized array threshold voltage implant enhance charge storage wi...
- Patent number 6,800,520
- Issue date Oct 5, 2004
- Micron Technology, Inc.
- Rongsheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively doped trench device isolation
- Patent number 6,781,212
- Issue date Aug 24, 2004
- Micron Technology, Inc.
- David Y. Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistors with nitrogen in the gate oxide of the p-channel tr...
- Patent number 6,744,102
- Issue date Jun 1, 2004
- Micron Technology, Inc.
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized array threshold voltage implant to enhance charge storage...
- Patent number 6,630,706
- Issue date Oct 7, 2003
- Micron Technology, Inc.
- Rongsheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing method of forming field effect transistors
- Patent number 6,541,395
- Issue date Apr 1, 2003
- Micron Technology, Inc.
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel implant through gate polysilicon
- Patent number 6,503,805
- Issue date Jan 7, 2003
- Micron Technology, Inc.
- Zhongze Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type FET in a CMOS with nitrogen atoms in the gate dielectric
- Patent number 6,417,546
- Issue date Jul 9, 2002
- Micron Technology, Inc.
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated circuitry and integrated circuitry
- Patent number 6,215,151
- Issue date Apr 10, 2001
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel implant through gate polysilicon
- Patent number 6,162,693
- Issue date Dec 19, 2000
- Micron Technology, Inc.
- Zhongze Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuitry and semiconductor processing method of forming...
- Patent number 6,093,661
- Issue date Jul 25, 2000
- Micron Technology, Inc.
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anisotropic conductive interconnect material for electronic devices...
- Patent number 6,011,307
- Issue date Jan 4, 2000
- Micron Technology, Inc.
- Tongbi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated circuitry and integrated circuitry
- Patent number 5,946,564
- Issue date Aug 31, 1999
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE
- Publication number 20150236058
- Publication date Aug 20, 2015
- OMNIVISION TECHNOLOGIES, INC.
- Sing-Chung Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE
- Publication number 20150048427
- Publication date Feb 19, 2015
- OMNIVISION TECHNOLOGIES, INC.
- Sing-Chung Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dopant Implantation Hardmask for Forming Doped Isolation Regions in...
- Publication number 20120319242
- Publication date Dec 20, 2012
- Duli Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS AND SYSTEM TO PROVIDE CONDUCTIVITY FOR A SUBSTRAT...
- Publication number 20120280109
- Publication date Nov 8, 2012
- OMNIVISION TECHNOLOGIES, INC.
- Duli Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH REDUCED BLOOMING AND E...
- Publication number 20120235212
- Publication date Sep 20, 2012
- OMNIVISION TECHNOLOGIES, INC.
- Gang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK
- Publication number 20110085067
- Publication date Apr 14, 2011
- OMNIVISION TECHNOLOGIES, INC.
- Vincent Venezia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming capacitor structures, methods of forming thresho...
- Publication number 20100297822
- Publication date Nov 25, 2010
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK
- Publication number 20100271524
- Publication date Oct 28, 2010
- OMNIVISION TECHNOLOGIES, INC.
- Vincent Venezia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selectively doped trench device isolation
- Publication number 20060220109
- Publication date Oct 5, 2006
- David Y. Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming threshold voltage implant regions
- Publication number 20060199341
- Publication date Sep 7, 2006
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of implanting dopant into channel regions
- Publication number 20060199340
- Publication date Sep 7, 2006
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming capacitor structures
- Publication number 20060183291
- Publication date Aug 17, 2006
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming capacitor structures, methods of forming thresho...
- Publication number 20060046381
- Publication date Mar 2, 2006
- Hongmei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor structure having reduced transistor leakage attributes
- Publication number 20050032290
- Publication date Feb 10, 2005
- Micron Technology, Inc.
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selectively doped trench device isolation
- Publication number 20050012174
- Publication date Jan 20, 2005
- David Y. Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Localized array threshold voltage implant to enhance charge storage...
- Publication number 20030201471
- Publication date Oct 30, 2003
- Rongsheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor structure having reduced transistor leakage attributes
- Publication number 20030132428
- Publication date Jul 17, 2003
- Micron Technology, Inc.
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Localized array threshold voltage implant to enhance charge storage...
- Publication number 20030042489
- Publication date Mar 6, 2003
- Rongsheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuitry and semiconductor processing method of forming...
- Publication number 20020079542
- Publication date Jun 27, 2002
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE FET IN A CMOS WITH NITROGEN ATOMS IN THE GATE DIELECTRIC
- Publication number 20010040256
- Publication date Nov 15, 2001
- JIGISH D. TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Channel implant through gate polysilicon
- Publication number 20010016389
- Publication date Aug 23, 2001
- Zhongze Wang
- H01 - BASIC ELECTRIC ELEMENTS

Rongsheng Yang

Person

Patents Grantslast 30 patents

Image sensor pixel cell with switched deep trench isolation structure

Image sensor pixel cell with switched deep trench isolation structure

Backside-illuminated (BSI) image sensor with reduced blooming and e...

Multilayer image sensor pixel structure for reducing crosstalk

Methods of implanting dopant into channel regions

CMOS image sensor with peripheral trench capacitor

Multilayer image sensor pixel structure for reducing crosstalk

Methods of implanting dopant into channel regions

Methods of forming threshold voltage implant regions

Methods of forming capacitor structures

Methods of forming threshold voltage implant regions

Selectively doped trench device isolation

Transistor structure having reduced transistor leakage attributes

Transistor structure having reduced transistor leakage attributes

Localized array threshold voltage implant to enhance charge storage...

Localized array threshold voltage implant enhance charge storage wi...

Selectively doped trench device isolation

MOS transistors with nitrogen in the gate oxide of the p-channel tr...

Localized array threshold voltage implant to enhance charge storage...

Semiconductor processing method of forming field effect transistors

Channel implant through gate polysilicon

P-type FET in a CMOS with nitrogen atoms in the gate dielectric

Methods of forming integrated circuitry and integrated circuitry

Channel implant through gate polysilicon

Integrated circuitry and semiconductor processing method of forming...

Anisotropic conductive interconnect material for electronic devices...

Methods of forming integrated circuitry and integrated circuitry

Patents Applicationslast 30 patents

IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE

IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE

Dopant Implantation Hardmask for Forming Doped Isolation Regions in...

METHOD, APPARATUS AND SYSTEM TO PROVIDE CONDUCTIVITY FOR A SUBSTRAT...

BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH REDUCED BLOOMING AND E...

MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK

Methods of forming capacitor structures, methods of forming thresho...

MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK

Selectively doped trench device isolation

Methods of forming threshold voltage implant regions

Methods of implanting dopant into channel regions

Methods of forming capacitor structures

Methods of forming capacitor structures, methods of forming thresho...

Transistor structure having reduced transistor leakage attributes

Selectively doped trench device isolation

Localized array threshold voltage implant to enhance charge storage...

Transistor structure having reduced transistor leakage attributes

Localized array threshold voltage implant to enhance charge storage...

Integrated circuitry and semiconductor processing method of forming...

P-TYPE FET IN A CMOS WITH NITROGEN ATOMS IN THE GATE DIELECTRIC

Channel implant through gate polysilicon