Rongyao Ma

Person

Chengdu, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor, termination structure and associated metho...
- Patent number 9,496,382
- Issue date Nov 15, 2016
- Chengdu Monolithic Power Systems Co., Ltd.
- Tiesheng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and associated method for manufacturing
- Patent number 9,418,983
- Issue date Aug 16, 2016
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor, termination structure and associated metho...
- Patent number 9,362,351
- Issue date Jun 7, 2016
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device and associated fabrication method
- Patent number 9,281,393
- Issue date Mar 8, 2016
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistors and associated fabrication methods
- Patent number 9,230,956
- Issue date Jan 5, 2016
- Chengdu Monolithic Power Systems, Inc.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection structure and semiconductor device comprising the same
- Patent number 8,969,968
- Issue date Mar 3, 2015
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate MOSFET device and method for making the same
- Patent number 8,735,973
- Issue date May 27, 2014
- Chengdu Monolithic Power Systems Co., Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split trench-gate MOSFET with integrated Schottky diode
- Patent number 8,680,614
- Issue date Mar 25, 2014
- Monolithic Power Systems, Inc.
- Tiesheng Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND ASSOCIATED FABRICATION METHOD
- Publication number 20150249124
- Publication date Sep 3, 2015
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, TERMINATION STRUCTURE AND ASSOCIATED METHO...
- Publication number 20150137220
- Publication date May 21, 2015
- Chengdu Monolithic Power Systems Co., Ltd.
- Tiesheng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, TERMINATION STRUCTURE AND ASSOCIATED METHO...
- Publication number 20140353748
- Publication date Dec 4, 2014
- CHENGDU MONOLITHIC POWER SYSTEMS, INC.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ASSOCIATED METHOD FOR MANUFACTURING
- Publication number 20140183627
- Publication date Jul 3, 2014
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION STRUCTURE AND SEMICONDUCTOR DEVICE COMPRISING THE SAME
- Publication number 20140183639
- Publication date Jul 3, 2014
- Chengdu Monolithic Power Systems, Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION SEMICONDUCTOR DEVICE AND ASSOCIATED FABRICATION METHOD
- Publication number 20140159143
- Publication date Jun 12, 2014
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTORS AND ASSOCIATED FABRICATION METHODS
- Publication number 20140117415
- Publication date May 1, 2014
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ASSOCIATED METHOD FOR MANUFACTURING
- Publication number 20140117416
- Publication date May 1, 2014
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING ESD PROTECTION STRUCTURE AND ASSOCIATED...
- Publication number 20140103416
- Publication date Apr 17, 2014
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT TRENCH-GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20130328122
- Publication date Dec 12, 2013
- Monolithic Power Systems, Inc.
- Tiesheng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ASSOCIATED FABRICATION METHOD
- Publication number 20130234245
- Publication date Sep 12, 2013
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE MOSFET DEVICE
- Publication number 20130153999
- Publication date Jun 20, 2013
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE MOSFET DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20120280311
- Publication date Nov 8, 2012
- Chengdu Monolithic Power Systems Co., Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Field effect transistor, termination structure and associated metho...

Semiconductor device and associated method for manufacturing

Field effect transistor, termination structure and associated metho...

Super junction semiconductor device and associated fabrication method

Junction field effect transistors and associated fabrication methods

ESD protection structure and semiconductor device comprising the same

Trench-gate MOSFET device and method for making the same

Split trench-gate MOSFET with integrated Schottky diode

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND ASSOCIATED FABRICATION METHOD

FIELD EFFECT TRANSISTOR, TERMINATION STRUCTURE AND ASSOCIATED METHO...

FIELD EFFECT TRANSISTOR, TERMINATION STRUCTURE AND ASSOCIATED METHO...

SEMICONDUCTOR DEVICE AND ASSOCIATED METHOD FOR MANUFACTURING

ESD PROTECTION STRUCTURE AND SEMICONDUCTOR DEVICE COMPRISING THE SAME

SUPER JUNCTION SEMICONDUCTOR DEVICE AND ASSOCIATED FABRICATION METHOD

JUNCTION FIELD EFFECT TRANSISTORS AND ASSOCIATED FABRICATION METHODS

SEMICONDUCTOR DEVICE AND ASSOCIATED METHOD FOR MANUFACTURING

SEMICONDUCTOR DEVICE HAVING ESD PROTECTION STRUCTURE AND ASSOCIATED...

SPLIT TRENCH-GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE

SEMICONDUCTOR DEVICE AND ASSOCIATED FABRICATION METHOD

TRENCH GATE MOSFET DEVICE

TRENCH-GATE MOSFET DEVICE AND METHOD FOR MAKING THE SAME