Rozalie Schachter

Person

New York, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Passivation and insulation of III-V devices with pnictides, particu...
- Patent number 5,247,349
- Issue date Sep 21, 1993
- Stauffer Chemical Company
- Diego J. Olego
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Films of catenated phosphorus materials, their preparation and use,...
- Patent number 5,032,472
- Issue date Jul 16, 1991
- Stauffer Chemical Company
- Christian G. Michel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Cracking traps for process gas components having a condensed phase
- Patent number 4,867,952
- Issue date Sep 19, 1989
- American Cyanamid Company
- John A. Baumann
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Catenated phosphorus materials and their preparation
- Patent number 4,822,581
- Issue date Apr 18, 1989
- Stauffer Chemical Company
- Christian G. Michel
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Films of catenated phosphorus materials, their preparation and use,...
- Patent number 4,818,636
- Issue date Apr 4, 1989
- Stauffer Chemical Company
- Christian G. Michel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of vacuum depostion of pnictide films on a substrate using a...
- Patent number 4,761,300
- Issue date Aug 2, 1988
- Stauffer Chemical Company
- Rozalie Schachter
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Pnictide trap for vacuum systems
- Patent number 4,746,500
- Issue date May 24, 1988
- Stauffer Chemical Company
- Robert W. Parry
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Sputtering method for making thin film field effect transistor util...
- Patent number 4,732,659
- Issue date Mar 22, 1988
- Stauffer Chemical Company
- Rozalie Schachter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping of catenated phosphorus materials
- Patent number 4,713,192
- Issue date Dec 15, 1987
- Stauffer Chemical Company
- Christian G. Michel
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Passivation of InP by plasma deposited phosphorus
- Patent number 4,696,828
- Issue date Sep 29, 1987
- Stauffer Chemical Company
- Rozalie Schachter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monoclinic phosphorus formed from vapor in the presence of an alkal...
- Patent number 4,620,968
- Issue date Nov 4, 1986
- Stauffer Chemical Company
- Christian G. Michel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Pnictide trap for vacuum systems
- Patent number 4,613,485
- Issue date Sep 23, 1986
- Stauffer Chemical Company
- Robert W. Parry
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Thin film field effect transistors utilizing a polypnictide semicon...
- Patent number 4,558,340
- Issue date Dec 10, 1985
- Stauffer Chemical Company
- Rozalie Schachter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sputtered semiconducting films of catenated phosphorus material and...
- Patent number 4,509,066
- Issue date Apr 2, 1985
- Stauffer Chemical Company
- Rozalie Schachter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Catenated phosphorus materials, their preparation and use, and semi...
- Patent number 4,508,931
- Issue date Apr 2, 1985
- Stauffer Chemical Company
- Christian G. Michel
- C30 - CRYSTAL GROWTH

Rozalie Schachter

Person

Patents Grantslast 30 patents

Passivation and insulation of III-V devices with pnictides, particu...

Films of catenated phosphorus materials, their preparation and use,...

Cracking traps for process gas components having a condensed phase

Catenated phosphorus materials and their preparation

Films of catenated phosphorus materials, their preparation and use,...

Method of vacuum depostion of pnictide films on a substrate using a...

Pnictide trap for vacuum systems

Sputtering method for making thin film field effect transistor util...

Doping of catenated phosphorus materials

Passivation of InP by plasma deposited phosphorus

Monoclinic phosphorus formed from vapor in the presence of an alkal...

Pnictide trap for vacuum systems

Thin film field effect transistors utilizing a polypnictide semicon...

Sputtered semiconducting films of catenated phosphorus material and...

Catenated phosphorus materials, their preparation and use, and semi...