Ru-Chin Tu

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium-nitride based ultraviolet photo detector
- Patent number 7,307,291
- Issue date Dec 11, 2007
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Gallium-nitride based light-emitting diode structure with high reve...
- Patent number 7,180,096
- Issue date Feb 20, 2007
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-brightness gallium-nitride based light emitting diode structure
- Patent number 7,180,097
- Issue date Feb 20, 2007
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN LED structure with p-type contacting layer grown at low-tempera...
- Patent number 7,105,850
- Issue date Sep 12, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode structure
- Patent number 7,087,922
- Issue date Aug 8, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride based light emitting diode structure with enhanced...
- Patent number 7,087,924
- Issue date Aug 8, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-brightness gallium-nitride based light emitting diode structure
- Patent number 7,049,638
- Issue date May 23, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride based multi-quantum well light-emitting diode n-typ...
- Patent number 7,042,019
- Issue date May 9, 2006
- Formosa Epitaxy Incorporation
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of GaN light-emitting diode
- Patent number 7,042,018
- Issue date May 9, 2006
- Formosa Epitaxy Incorporation
- Ru-Chin Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride based light-emitting diode epitaxial structure
- Patent number 6,979,835
- Issue date Dec 27, 2005
- Formosa Epitaxy Incorporation
- Cheng-Tsang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode and the manufacturing method of the same
- Patent number 6,969,627
- Issue date Nov 29, 2005
- Industrial Technology Research Institute
- Shyi-Ming Pan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Gallium-nitride based ultraviolet photo detector
- Publication number 20060163681
- Publication date Jul 27, 2006
- Liang-Wen Wu
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
High-brightness gallium-nitride based light emitting diode structure
- Publication number 20060102930
- Publication date May 18, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting diode structure
- Publication number 20060102909
- Publication date May 18, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-BRIGHTNESS GALLIUM-NITRIDE BASED LIGHT EMITTING DIODE STRUCTURE
- Publication number 20060086942
- Publication date Apr 27, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM-NITRIDE BASED MULTI-QUANTUM WELL LIGHT-EMITTING DIODE N-TYP...
- Publication number 20060081861
- Publication date Apr 20, 2006
- Liang-Wen Wu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Gallium-nitride based semiconductor device buffer layer structure
- Publication number 20060076564
- Publication date Apr 13, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF GAN LIGHT-EMITTING DIODE
- Publication number 20060060873
- Publication date Mar 23, 2006
- Ru-Chin Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium-nitride based light emitting diode light emitting layer str...
- Publication number 20060054897
- Publication date Mar 16, 2006
- Cheng-Tsang Yu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride epitaxial layer structure and method of manufacturing the same
- Publication number 20060049401
- Publication date Mar 9, 2006
- Tzu-Chi Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial structure and fabrication method of nitride semiconductor...
- Publication number 20060049418
- Publication date Mar 9, 2006
- Tzi-Chi Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium-nitride based light-emitting diode structure with high reve...
- Publication number 20060049424
- Publication date Mar 9, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium-nitride based light emitting diode structure
- Publication number 20060043394
- Publication date Mar 2, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium-nitride based light emitting diode structure with enhanced...
- Publication number 20060038193
- Publication date Feb 23, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting diode and the manufacturing method of the same
- Publication number 20060038195
- Publication date Feb 23, 2006
- Shyi-Ming Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN LED structure with p-type contacting layer grown at low-tempera...
- Publication number 20060027821
- Publication date Feb 9, 2006
- Liang-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting diode and the manufacturing method of the same
- Publication number 20040115845
- Publication date Jun 17, 2004
- Shyi-Ming Pan
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Gallium-nitride based ultraviolet photo detector

Gallium-nitride based light-emitting diode structure with high reve...

High-brightness gallium-nitride based light emitting diode structure

GaN LED structure with p-type contacting layer grown at low-tempera...

Light-emitting diode structure

Gallium-nitride based light emitting diode structure with enhanced...

High-brightness gallium-nitride based light emitting diode structure

Gallium-nitride based multi-quantum well light-emitting diode n-typ...

Structure of GaN light-emitting diode

Gallium-nitride based light-emitting diode epitaxial structure

Light-emitting diode and the manufacturing method of the same

Patents Applicationslast 30 patents

Gallium-nitride based ultraviolet photo detector

High-brightness gallium-nitride based light emitting diode structure

Light-emitting diode structure

HIGH-BRIGHTNESS GALLIUM-NITRIDE BASED LIGHT EMITTING DIODE STRUCTURE

GALLIUM-NITRIDE BASED MULTI-QUANTUM WELL LIGHT-EMITTING DIODE N-TYP...

Gallium-nitride based semiconductor device buffer layer structure

STRUCTURE OF GAN LIGHT-EMITTING DIODE

Gallium-nitride based light emitting diode light emitting layer str...

Nitride epitaxial layer structure and method of manufacturing the same

Epitaxial structure and fabrication method of nitride semiconductor...

Gallium-nitride based light-emitting diode structure with high reve...

Gallium-nitride based light emitting diode structure

Gallium-nitride based light emitting diode structure with enhanced...

Light-emitting diode and the manufacturing method of the same

GaN LED structure with p-type contacting layer grown at low-tempera...

Light-emitting diode and the manufacturing method of the same