RUQIANG BAO

Person

WAPPINGERS FALLS, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned hybrid substrate stacked gate-all-around transistors
- Patent number 12,176,348
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate boundary for transistor scaling
- Patent number 12,176,250
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall epitaxy encapsulation for nanosheet I/O device
- Patent number 12,142,636
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Independent gate length tunability for stacked transistors
- Patent number 12,107,168
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple threshold voltage scheme in complementary metal oxide semi...
- Patent number 12,068,387
- Issue date Aug 20, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal gate with poly silicide for vertical transport f...
- Patent number 12,034,005
- Issue date Jul 9, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor having multiple threshold v...
- Patent number 12,015,069
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Ruqiang Bao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate stacks with multiple high-κ dielectric layers
- Patent number 11,961,895
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar devices with consistent base dielectric
- Patent number 11,908,743
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance reduction in nanosheet device structure
- Patent number 11,894,423
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall epitaxy encapsulation for nanosheet I/O device
- Patent number 11,804,522
- Issue date Oct 31, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structure for vertical transport field effect transistor
- Patent number 11,749,744
- Issue date Sep 5, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage non-planar complementary metal-oxide-semico...
- Patent number 11,749,680
- Issue date Sep 5, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack dipole compensation for threshold voltage definition in...
- Patent number 11,735,593
- Issue date Aug 22, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random-access memory cell design
- Patent number 11,710,521
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Lan Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxygen-free replacement liner for improved transistor performance
- Patent number 11,688,635
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage non-planar complementary metal-oxide-semico...
- Patent number 11,605,634
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with N/P boundary buffer
- Patent number 11,569,132
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Romain Lallement
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enabling residue free gap fill between nanosheets
- Patent number 11,515,431
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with a projection liner
- Patent number 11,476,418
- Issue date Oct 18, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with a wrap around and ring type of electr...
- Patent number 11,456,415
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around FETs having uniform threshold voltage
- Patent number 11,456,219
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-metal dipole doping to offer multi-threshold voltage pairs wi...
- Patent number 11,393,725
- Issue date Jul 19, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enabling anneal for reliability improvement and multi-Vt with inter...
- Patent number 11,329,136
- Issue date May 10, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance reduction in nanosheet device structure
- Patent number 11,289,573
- Issue date Mar 29, 2022
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked gate structures
- Patent number 11,282,838
- Issue date Mar 22, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment from oxygen vacancy by scavenge metal...
- Patent number 11,282,962
- Issue date Mar 22, 2022
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Additive core subtractive liner for metal cut etch processes
- Patent number 11,276,767
- Issue date Mar 15, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate process for vertical transport field-effect...
- Patent number 11,271,106
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate process for vertical transport field-effect...
- Patent number 11,257,721
- Issue date Feb 22, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTIPLE GATE DIELECTRICS FOR MONOLITHIC STACKED DEVICES
- Publication number 20240429277
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT WORK FUNCTION METALS
- Publication number 20240321882
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT FORMATION
- Publication number 20240266409
- Publication date Aug 8, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES
- Publication number 20240194670
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate All Around Dual Channel Transistors
- Publication number 20240186393
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Dielectric for Bonded Stacked Transistors
- Publication number 20240186394
- Publication date Jun 6, 2024
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Metal Gate Integration for Gate All Around Transistors
- Publication number 20240186401
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS
- Publication number 20240178072
- Publication date May 30, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...
- Publication number 20240145473
- Publication date May 2, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE...
- Publication number 20240113162
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH...
- Publication number 20240105769
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET
- Publication number 20240096887
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Ruqiang BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER
- Publication number 20240088277
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SHARED METAL GATE INTEGRATION FOR SCALED GATE ALL AROUND (GAA)...
- Publication number 20240079276
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE
- Publication number 20240014266
- Publication date Jan 11, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED COMBSHEET FIELD EFFECT TRANSISTOR
- Publication number 20240006500
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-Vt REPLACEMENT METAL GATE BONDED STACKED FETs
- Publication number 20240006480
- Publication date Jan 4, 2024
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK DIPOLE COMPENSATION FOR THRESHOLD VOLTAGE DEFINITION IN...
- Publication number 20230352488
- Publication date Nov 2, 2023
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE BOUNDARY FOR TRANSISTOR SCALING
- Publication number 20230343650
- Publication date Oct 26, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETS INCLUDING DEVICES WITH THICK GATE OXIDE
- Publication number 20230307452
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE DIPOLE OF DIFFERENT STRENGTHS IN GATE ALL AROUND TRANSISTOR
- Publication number 20230261074
- Publication date Aug 17, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENABLING BOTTOM ISOLATION AND EPITAXIAL STRAIN OF FET SOURCE/DRAIN...
- Publication number 20230246067
- Publication date Aug 3, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL DIELECTRIC CAP FOR SUBTRACTIVE VIAS
- Publication number 20230207387
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER BONDING FOR STACKED TRANSISTORS
- Publication number 20230197721
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFIC...
- Publication number 20230187495
- Publication date Jun 15, 2023
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE
- Publication number 20230187496
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE STRUCTURE WITH STACKED DEVICES
- Publication number 20230187491
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETS WITH NON-SHARED WORK FUNCTION METALS
- Publication number 20230178553
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC REFLOW FOR BOUNDARY CONTROL
- Publication number 20230170348
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Jing Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED HYBRID SUBSTRATE STACKED GATE-ALL-AROUND TRANSISTORS
- Publication number 20230170352
- Publication date Jun 1, 2023
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS

RUQIANG BAO

Person

Patents Grantslast 30 patents

Self-aligned hybrid substrate stacked gate-all-around transistors

Metal gate boundary for transistor scaling

Sidewall epitaxy encapsulation for nanosheet I/O device

Independent gate length tunability for stacked transistors

Multiple threshold voltage scheme in complementary metal oxide semi...

Self-aligned metal gate with poly silicide for vertical transport f...

Gate-all-around field effect transistor having multiple threshold v...

Gate stacks with multiple high-κ dielectric layers

Planar devices with consistent base dielectric

Contact resistance reduction in nanosheet device structure

Sidewall epitaxy encapsulation for nanosheet I/O device

Fin structure for vertical transport field effect transistor

Multi-threshold voltage non-planar complementary metal-oxide-semico...

Gate stack dipole compensation for threshold voltage definition in...

Static random-access memory cell design

Oxygen-free replacement liner for improved transistor performance

Multi-threshold voltage non-planar complementary metal-oxide-semico...

Transistor structure with N/P boundary buffer

Enabling residue free gap fill between nanosheets

Phase change memory cell with a projection liner

Phase change memory cell with a wrap around and ring type of electr...

Gate-all-around FETs having uniform threshold voltage

Multi-metal dipole doping to offer multi-threshold voltage pairs wi...

Enabling anneal for reliability improvement and multi-Vt with inter...

Contact resistance reduction in nanosheet device structure

Stacked gate structures

Threshold voltage adjustment from oxygen vacancy by scavenge metal...

Additive core subtractive liner for metal cut etch processes

Replacement metal gate process for vertical transport field-effect...

Replacement metal gate process for vertical transport field-effect...

Patents Applicationslast 30 patents

MULTIPLE GATE DIELECTRICS FOR MONOLITHIC STACKED DEVICES

DIFFERENT WORK FUNCTION METALS

BACKSIDE CONTACT FORMATION

ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES

Gate All Around Dual Channel Transistors

Gate Dielectric for Bonded Stacked Transistors

Replacement Metal Gate Integration for Gate All Around Transistors

NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS

STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...

MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE...

STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH...

MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET

FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER

NON-SHARED METAL GATE INTEGRATION FOR SCALED GATE ALL AROUND (GAA)...

SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE

STACKED COMBSHEET FIELD EFFECT TRANSISTOR

MULTI-Vt REPLACEMENT METAL GATE BONDED STACKED FETs

GATE STACK DIPOLE COMPENSATION FOR THRESHOLD VOLTAGE DEFINITION IN...

METAL GATE BOUNDARY FOR TRANSISTOR SCALING

STACKED FETS INCLUDING DEVICES WITH THICK GATE OXIDE

MULTIPLE DIPOLE OF DIFFERENT STRENGTHS IN GATE ALL AROUND TRANSISTOR

ENABLING BOTTOM ISOLATION AND EPITAXIAL STRAIN OF FET SOURCE/DRAIN...

CONFORMAL DIELECTRIC CAP FOR SUBTRACTIVE VIAS

WAFER BONDING FOR STACKED TRANSISTORS

MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFIC...

SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE

MIDDLE OF LINE STRUCTURE WITH STACKED DEVICES

STACKED FETS WITH NON-SHARED WORK FUNCTION METALS

DIELECTRIC REFLOW FOR BOUNDARY CONTROL

SELF-ALIGNED HYBRID SUBSTRATE STACKED GATE-ALL-AROUND TRANSISTORS