Sam Yang

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low leakage MIM capacitor
- Patent number 8,470,665
- Issue date Jun 25, 2013
- Micron Technology, Inc.
- Sam Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a ruthenium metal layer and a structure comprisi...
- Patent number 8,441,077
- Issue date May 14, 2013
- Micron Technology, Inc.
- Sam Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low leakage MIM capacitor
- Patent number 7,435,641
- Issue date Oct 14, 2008
- Micron Technology, Inc.
- Sam Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Low leakage MIM capacitor
- Patent number 7,378,719
- Issue date May 27, 2008
- Micron Technology, Inc.
- Sam Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Low leakage MIM capacitor
- Patent number 7,368,343
- Issue date May 6, 2008
- Micron Technology, Inc.
- Sam Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming and integrated circuit structures containing ru...
- Patent number 7,253,076
- Issue date Aug 7, 2007
- Micron Technologies, Inc.
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for high efficiency metalorganic chemical vapor deposition
- Patent number 7,214,618
- Issue date May 8, 2007
- Micron Technology, Inc.
- Weimin Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Capacitor with high dielectric constant materials and method of making
- Patent number 7,192,828
- Issue date Mar 20, 2007
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planarization of metal container structures
- Patent number 7,053,462
- Issue date May 30, 2006
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a ruthenium metal layer
- Patent number 7,018,675
- Issue date Mar 28, 2006
- Micron Technology, Inc.
- Sam Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metal oxynitride capacitor barrier layer
- Patent number 7,015,527
- Issue date Mar 21, 2006
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxynitride capacitor barrier layer
- Patent number 7,002,202
- Issue date Feb 21, 2006
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for high efficiency metalorganic chemical vapor deposition
- Patent number 6,921,710
- Issue date Jul 26, 2005
- Micron Technology, Inc.
- Weimin Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming and integrated circuit structures containing ru...
- Patent number 6,833,576
- Issue date Dec 21, 2004
- Micron Technology, Inc.
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen barrier for cell container process
- Patent number 6,803,621
- Issue date Oct 12, 2004
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen barrier for cell container process
- Patent number 6,746,930
- Issue date Jun 8, 2004
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor with high dielectric constant materials and method of making
- Patent number 6,727,140
- Issue date Apr 27, 2004
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for high efficiency metalorganic chemical vapor deposition
- Patent number 6,676,756
- Issue date Jan 13, 2004
- Micron Technology, Inc.
- Weimin Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metal oxynitride capacitor barrier layer
- Patent number 6,670,256
- Issue date Dec 30, 2003
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxynitride capacitor barrier layer
- Patent number 6,664,583
- Issue date Dec 16, 2003
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxynitride capacitor barrier layer
- Patent number 6,664,584
- Issue date Dec 16, 2003
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxynitride capacitor barrier layer
- Patent number 6,631,069
- Issue date Oct 7, 2003
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a ruthenium metal layer
- Patent number 6,617,248
- Issue date Sep 9, 2003
- Micron Technology, Inc.
- Sam Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming and integrated circuit structures containing ru...
- Patent number 6,596,583
- Issue date Jul 22, 2003
- Micron Technology, Inc.
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor with high dielectric constant materials
- Patent number 6,586,796
- Issue date Jul 1, 2003
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for high efficiency metalorganic chemical vapor deposition
- Patent number 6,576,538
- Issue date Jun 10, 2003
- Micron Technology, Inc.
- Weimin Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Planarization of metal container structures
- Patent number 6,524,912
- Issue date Feb 25, 2003
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxynitride capacitor barrier layer
- Patent number 6,417,537
- Issue date Jul 9, 2002
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW LEAKAGE MIM CAPACITOR
- Publication number 20080064179
- Publication date Mar 13, 2008
- Micron Technology, Inc.
- Sam Yang
- G11 - INFORMATION STORAGE
Information Patent Application
LOW LEAKAGE MIM CAPACITOR
- Publication number 20080057664
- Publication date Mar 6, 2008
- Micron Technology, Inc.
- Sam Yang
- G11 - INFORMATION STORAGE
Information Patent Application
LOW LEAKAGE MIM CAPACITOR
- Publication number 20080057663
- Publication date Mar 6, 2008
- Micron Technology, Inc.
- Sam Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Method for forming a ruthenium metal layer and a structure comprisi...
- Publication number 20060165894
- Publication date Jul 27, 2006
- Sam Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods for forming and integrated circuit structures containing ru...
- Publication number 20060076597
- Publication date Apr 13, 2006
- Micron Technology, Inc.
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for high efficiency metalorganic chemical vapor deposition
- Publication number 20050223978
- Publication date Oct 13, 2005
- Weimin Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for forming a ruthenium metal layer
- Publication number 20050074980
- Publication date Apr 7, 2005
- Sam Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Capacitor with high dielectric constant materials and method of making
- Publication number 20040191983
- Publication date Sep 30, 2004
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for high efficiency metaloganic chemical vapor deposition
- Publication number 20040147103
- Publication date Jul 29, 2004
- Weimin Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Technique for high efficiency metalorganic chemical vapor deposition
- Publication number 20040142559
- Publication date Jul 22, 2004
- Weimin Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Metal oxynitride capacitor barrier layer
- Publication number 20040085802
- Publication date May 6, 2004
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxynitride capacitor barrier layer
- Publication number 20040070017
- Publication date Apr 15, 2004
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planarization of metal container structures
- Publication number 20030082903
- Publication date May 1, 2003
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen barrier for cell container process
- Publication number 20030064566
- Publication date Apr 3, 2003
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell capacitor structure and method of formation
- Publication number 20030062558
- Publication date Apr 3, 2003
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for high efficiency metalorganic chemical vapor deposition
- Publication number 20030049932
- Publication date Mar 13, 2003
- Weimin Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Capacitor with high dielectric constant materials
- Publication number 20030011015
- Publication date Jan 16, 2003
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor with high dielectric constant materials and method of making
- Publication number 20030011014
- Publication date Jan 16, 2003
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen barrier for cell container process
- Publication number 20030013265
- Publication date Jan 16, 2003
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming and integrated circuit structures containing ru...
- Publication number 20030003697
- Publication date Jan 2, 2003
- Micron Techology, Inc.
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low leakage MIM capacitor
- Publication number 20020192904
- Publication date Dec 19, 2002
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxynitride capacitor barrier layer
- Publication number 20020122284
- Publication date Sep 5, 2002
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxynitride capacitor barrier layer
- Publication number 20020113280
- Publication date Aug 22, 2002
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxynitride capacitor barrier layer
- Publication number 20020109198
- Publication date Aug 15, 2002
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low leakage MIM capacitor
- Publication number 20020074584
- Publication date Jun 20, 2002
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming and integrated circuit structures containing ru...
- Publication number 20020055235
- Publication date May 9, 2002
- Micron Technology, Inc.,
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell capacitor structure and method of formation
- Publication number 20020036313
- Publication date Mar 28, 2002
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming and integrated circuit structures containing ru...
- Publication number 20020037630
- Publication date Mar 28, 2002
- Micron Technology, Inc.
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxynitride capacitor barrier layer
- Publication number 20020022334
- Publication date Feb 21, 2002
- Micron Technology, Inc.
- Sam Yang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Low leakage MIM capacitor

Method for forming a ruthenium metal layer and a structure comprisi...

Low leakage MIM capacitor

Low leakage MIM capacitor

Low leakage MIM capacitor

Methods for forming and integrated circuit structures containing ru...

Technique for high efficiency metalorganic chemical vapor deposition

Capacitor with high dielectric constant materials and method of making

Planarization of metal container structures

Method for forming a ruthenium metal layer

Metal oxynitride capacitor barrier layer

Metal oxynitride capacitor barrier layer

Technique for high efficiency metalorganic chemical vapor deposition

Methods for forming and integrated circuit structures containing ru...

Oxygen barrier for cell container process

Oxygen barrier for cell container process

Capacitor with high dielectric constant materials and method of making

Technique for high efficiency metalorganic chemical vapor deposition

Metal oxynitride capacitor barrier layer

Metal oxynitride capacitor barrier layer

Metal oxynitride capacitor barrier layer

Metal oxynitride capacitor barrier layer

Method for forming a ruthenium metal layer

Methods for forming and integrated circuit structures containing ru...

Capacitor with high dielectric constant materials

Technique for high efficiency metalorganic chemical vapor deposition

Planarization of metal container structures

Metal oxynitride capacitor barrier layer

Patents Applicationslast 30 patents

LOW LEAKAGE MIM CAPACITOR

LOW LEAKAGE MIM CAPACITOR

LOW LEAKAGE MIM CAPACITOR

Method for forming a ruthenium metal layer and a structure comprisi...

Methods for forming and integrated circuit structures containing ru...

Technique for high efficiency metalorganic chemical vapor deposition

Method for forming a ruthenium metal layer

Capacitor with high dielectric constant materials and method of making

Technique for high efficiency metaloganic chemical vapor deposition

Technique for high efficiency metalorganic chemical vapor deposition

Metal oxynitride capacitor barrier layer

Metal oxynitride capacitor barrier layer

Planarization of metal container structures

Oxygen barrier for cell container process

Memory cell capacitor structure and method of formation

Technique for high efficiency metalorganic chemical vapor deposition

Capacitor with high dielectric constant materials

Capacitor with high dielectric constant materials and method of making

Oxygen barrier for cell container process

Methods for forming and integrated circuit structures containing ru...

Low leakage MIM capacitor

Metal oxynitride capacitor barrier layer

Metal oxynitride capacitor barrier layer

Metal oxynitride capacitor barrier layer

Low leakage MIM capacitor

Methods for forming and integrated circuit structures containing ru...

Memory cell capacitor structure and method of formation

Methods for forming and integrated circuit structures containing ru...

Metal oxynitride capacitor barrier layer