Samir Chaudhry

Person

Weston, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bi-directional electrostatic discharge protection device for radio...
- Patent number 10,587,114
- Issue date Mar 10, 2020
- Newport Fab, LLC
- Roda Kanawati
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Amplifier using parallel high-speed and low-speed transistors
- Patent number 10,469,035
- Issue date Nov 5, 2019
- Newport Fab, LLC
- Jie Zheng
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Bent polysilicon gate structure for small footprint radio frequency...
- Patent number 10,325,833
- Issue date Jun 18, 2019
- Newport Fab, LLC
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication method for capacitors integratible with v...
- Patent number 7,911,006
- Issue date Mar 22, 2011
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a vertical transistor and capacitor
- Patent number 7,700,432
- Issue date Apr 20, 2010
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication method for capacitors integratible with v...
- Patent number 7,633,118
- Issue date Dec 15, 2009
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method
- Patent number 7,491,610
- Issue date Feb 17, 2009
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate silicon-on-insulator transistor
- Patent number 7,259,048
- Issue date Aug 21, 2007
- Agere Systems, INC
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication method for capacitors integratible with v...
- Patent number 7,242,056
- Issue date Jul 10, 2007
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for graded gate oxides on vertical and non-pla...
- Patent number 7,169,714
- Issue date Jan 30, 2007
- Agere Systems, INC
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor and method of manufacture
- Patent number 7,151,059
- Issue date Dec 19, 2006
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer inductor formed in a semiconductor substrate and having...
- Patent number 7,132,297
- Issue date Nov 7, 2006
- Agere Systems Inc.
- Michelle D. Griglione
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate silicon-on-insulator transistor
- Patent number 7,078,280
- Issue date Jul 18, 2006
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Patent number 7,056,783
- Issue date Jun 6, 2006
- Agere Systems Inc.
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ion implantation for achieving desired dopant concentration
- Patent number 7,049,199
- Issue date May 23, 2006
- Agere Systems Inc.
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate junction field-effect transistor
- Patent number 7,033,877
- Issue date Apr 25, 2006
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for defining the initial state of static random access memory
- Patent number 6,906,962
- Issue date Jun 14, 2005
- Agere Systems Inc.
- Paul Arthur Layman
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for detecting alpha particles
- Patent number 6,828,561
- Issue date Dec 7, 2004
- Agere Systems Inc.
- Paul Arthur Layman
- G01 - MEASURING TESTING
Information Patent Grant
Bipolar junction transistor compatible with vertical replacement ga...
- Patent number 6,759,730
- Issue date Jul 6, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device free of LLD regions
- Patent number 6,740,912
- Issue date May 25, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic fingerprinting of semiconductor integrated circuits
- Patent number 6,738,294
- Issue date May 18, 2004
- Agere Systems Inc.
- Paul Arthur Layman
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical replacement-gate silicon-on-insulator transistor
- Patent number 6,709,904
- Issue date Mar 23, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate junction field-effect transistor
- Patent number 6,690,040
- Issue date Feb 10, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Patent number 6,686,604
- Issue date Feb 3, 2004
- Agere Systems Inc.
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film multi-layer high Q transformer formed in a semiconductor...
- Patent number 6,667,536
- Issue date Dec 23, 2003
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer inductor formed in a semiconductor substrate
- Patent number 6,639,298
- Issue date Oct 28, 2003
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device with LDD structure
- Patent number 6,576,521
- Issue date Jun 10, 2003
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical PNP bipolar transistor and its method of fabrication
- Patent number 6,359,317
- Issue date Mar 19, 2002
- Agere Systems Guardian Corp.
- Michael S. Carroll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit capacitor including tapered plug
- Patent number 6,249,016
- Issue date Jun 19, 2001
- Agere Systems Guardian Corp.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an integrated circuit including high and low volt...
- Patent number 6,207,510
- Issue date Mar 27, 2001
- Lucent Technologies Inc.
- Glenn C. Abeln
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Amplifier Using Parallel High-Speed And Low-Speed Transistors
- Publication number 20190288648
- Publication date Sep 19, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Jie Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bi-directional Electrostatic Discharge Protection Device For Radio...
- Publication number 20180337170
- Publication date Nov 22, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Roda Kanawati
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
STRUCTURE AND FABRICATION METHOD FOR CAPACITORS INTEGRATIBLE WITH V...
- Publication number 20100044767
- Publication date Feb 25, 2010
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method
- Publication number 20090130810
- Publication date May 21, 2009
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method
- Publication number 20070238243
- Publication date Oct 11, 2007
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication method for capacitors integratible with v...
- Publication number 20070228440
- Publication date Oct 4, 2007
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A Vertical Replacement-Gate Silicon-On-Insulator Transistor
- Publication number 20070111414
- Publication date May 17, 2007
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate junction field-effect transistor
- Publication number 20060166429
- Publication date Jul 27, 2006
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layer inductor formed in a semiconductor substrate and having...
- Publication number 20050170554
- Publication date Aug 4, 2005
- Michelle D. Griglione
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method and structure for graded gate oxides on vertical and non-pla...
- Publication number 20050164516
- Publication date Jul 28, 2005
- Agere Systems Inc.
- Samir Chaudhry
- C30 - CRYSTAL GROWTH
Information Patent Application
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Publication number 20050048709
- Publication date Mar 3, 2005
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication method for capacitors integratible with v...
- Publication number 20040188737
- Publication date Sep 30, 2004
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate silicon-on-insulator transistor
- Publication number 20040155264
- Publication date Aug 12, 2004
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS transistor and method of manufacture
- Publication number 20040150014
- Publication date Aug 5, 2004
- Samir Chaudhry
- C30 - CRYSTAL GROWTH
Information Patent Application
Vertical replacement-gate junction field-effect transistor
- Publication number 20040110345
- Publication date Jun 10, 2004
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and method for detecting alpha particles
- Publication number 20040061060
- Publication date Apr 1, 2004
- Paul Arthur Layman
- G01 - MEASURING TESTING
Information Patent Application
Method for defining the initial state of static random access memory
- Publication number 20040062083
- Publication date Apr 1, 2004
- Paul Arthur Layman
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC FINGERPRINTING OF SEMICONDUCTOR INTEGRATED CIRCUITS
- Publication number 20040062084
- Publication date Apr 1, 2004
- Paul Arthur Layman
- G11 - INFORMATION STORAGE
Information Patent Application
Method of ion implantation for achieving desired dopant concentration
- Publication number 20040014303
- Publication date Jan 22, 2004
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for graded gate oxides on vertical and non-pla...
- Publication number 20030235957
- Publication date Dec 25, 2003
- Samir Chaudhry
- C30 - CRYSTAL GROWTH
Information Patent Application
SRAM cell with reduced standby leakage current and method for formi...
- Publication number 20030218218
- Publication date Nov 27, 2003
- Samir Chaudhry
- G11 - INFORMATION STORAGE
Information Patent Application
Vertical replacement-gate silicon-on-insulator transistor
- Publication number 20030064567
- Publication date Apr 3, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of ion implantation for achieving desired dopant concentration
- Publication number 20030064550
- Publication date Apr 3, 2003
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Publication number 20030060015
- Publication date Mar 27, 2003
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication method for capacitors integratible with v...
- Publication number 20030052365
- Publication date Mar 20, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar junction transistor compatible with vertical replacement ga...
- Publication number 20030052721
- Publication date Mar 20, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate junction field-effect transistor
- Publication number 20030047749
- Publication date Mar 13, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film multi-layer high Q transformer formed in a semiconductor...
- Publication number 20030003603
- Publication date Jan 2, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layer inductor formed in a semiconductor substrate
- Publication number 20030001231
- Publication date Jan 2, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS

Samir Chaudhry

Person

Patents Grantslast 30 patents

Bi-directional electrostatic discharge protection device for radio...

Amplifier using parallel high-speed and low-speed transistors

Bent polysilicon gate structure for small footprint radio frequency...

Structure and fabrication method for capacitors integratible with v...

Method of fabricating a vertical transistor and capacitor

Structure and fabrication method for capacitors integratible with v...

Fabrication method

Vertical replacement-gate silicon-on-insulator transistor

Structure and fabrication method for capacitors integratible with v...

Method and structure for graded gate oxides on vertical and non-pla...

MOS transistor and method of manufacture

Multi-layer inductor formed in a semiconductor substrate and having...

Vertical replacement-gate silicon-on-insulator transistor

Multiple operating voltage vertical replacement-gate (VRG) transistor

Method of ion implantation for achieving desired dopant concentration

Vertical replacement-gate junction field-effect transistor

Method for defining the initial state of static random access memory

Apparatus and method for detecting alpha particles

Bipolar junction transistor compatible with vertical replacement ga...

Semiconductor device free of LLD regions

Electronic fingerprinting of semiconductor integrated circuits

Vertical replacement-gate silicon-on-insulator transistor

Vertical replacement-gate junction field-effect transistor

Multiple operating voltage vertical replacement-gate (VRG) transistor

Thin film multi-layer high Q transformer formed in a semiconductor...

Multi-layer inductor formed in a semiconductor substrate

Method of forming semiconductor device with LDD structure

Vertical PNP bipolar transistor and its method of fabrication

Integrated circuit capacitor including tapered plug

Method for making an integrated circuit including high and low volt...

Patents Applicationslast 30 patents

Amplifier Using Parallel High-Speed And Low-Speed Transistors

Bi-directional Electrostatic Discharge Protection Device For Radio...

STRUCTURE AND FABRICATION METHOD FOR CAPACITORS INTEGRATIBLE WITH V...

Fabrication method

Fabrication method

Structure and fabrication method for capacitors integratible with v...

A Vertical Replacement-Gate Silicon-On-Insulator Transistor

Vertical replacement-gate junction field-effect transistor

Multi-layer inductor formed in a semiconductor substrate and having...

Method and structure for graded gate oxides on vertical and non-pla...

Multiple operating voltage vertical replacement-gate (VRG) transistor

Structure and fabrication method for capacitors integratible with v...

Vertical replacement-gate silicon-on-insulator transistor

MOS transistor and method of manufacture

Vertical replacement-gate junction field-effect transistor

Apparatus and method for detecting alpha particles

Method for defining the initial state of static random access memory

ELECTRONIC FINGERPRINTING OF SEMICONDUCTOR INTEGRATED CIRCUITS

Method of ion implantation for achieving desired dopant concentration

Method and structure for graded gate oxides on vertical and non-pla...

SRAM cell with reduced standby leakage current and method for formi...

Vertical replacement-gate silicon-on-insulator transistor

Method of ion implantation for achieving desired dopant concentration

Multiple operating voltage vertical replacement-gate (VRG) transistor

Structure and fabrication method for capacitors integratible with v...

Bipolar junction transistor compatible with vertical replacement ga...

Vertical replacement-gate junction field-effect transistor

Thin film multi-layer high Q transformer formed in a semiconductor...

Multi-layer inductor formed in a semiconductor substrate