Samuel C. Gioia

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit device comprising low dielectric constant materi...
- Patent number 6,522,005
- Issue date Feb 18, 2003
- Hyundai Electronics America Inc
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dielectric constant material in integrated circuit
- Patent number 6,522,006
- Issue date Feb 18, 2003
- Hyundai Electronics America Inc
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with reduced cross talk
- Patent number 6,504,249
- Issue date Jan 7, 2003
- Hyundai Electronics America Inc
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with reduced cross talk
- Patent number 6,504,250
- Issue date Jan 7, 2003
- Hyundai Electronics America Inc
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for using low dielectric constant material in integrated cir...
- Patent number 6,448,653
- Issue date Sep 10, 2002
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with reduced cross talk
- Patent number 6,208,029
- Issue date Mar 27, 2001
- Hyundai Electronics America
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS electrostatic discharge protection device and method for CMOS...
- Patent number 6,063,672
- Issue date May 16, 2000
- LSI Logic Corporation
- Gayle Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lightly doped drain ballast resistor
- Patent number 5,498,892
- Issue date Mar 12, 1996
- NCR Corporation
- John D. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for using low dielectric constant material in integrated cir...
- Patent number 5,438,022
- Issue date Aug 1, 1995
- AT&T Global Information Solutions Company
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making asymmetrically optimized CMOS field effect transis...
- Patent number 4,874,713
- Issue date Oct 17, 1989
- NCR Corporation
- Samuel C. Gioia
- H01 - BASIC ELECTRIC ELEMENTS

Samuel C. Gioia

Person

Patents Grantslast 30 patents

Integrated circuit device comprising low dielectric constant materi...

Low dielectric constant material in integrated circuit

Integrated circuit device with reduced cross talk

Integrated circuit device with reduced cross talk

Method for using low dielectric constant material in integrated cir...

Integrated circuit device with reduced cross talk

NMOS electrostatic discharge protection device and method for CMOS...

Lightly doped drain ballast resistor

Method for using low dielectric constant material in integrated cir...

Method of making asymmetrically optimized CMOS field effect transis...