Samuel James Bader

Person

Ithaca, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride (GaN) integrated circuit technology
- Patent number 12,336,268
- Issue date Jun 17, 2025
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) selective epitaxial windows for integrated ci...
- Patent number 12,302,618
- Issue date May 13, 2025
- Intel Corporation
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF high-electron-mobility transistors including group III-N stress...
- Patent number 11,710,785
- Issue date Jul 25, 2023
- Cornell University
- Austin Hickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage p-channel FET based on III-nitride heterostructures
- Patent number 11,522,080
- Issue date Dec 6, 2022
- Cornell University
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization-induced 2D hole gases for high-voltage p-channel trans...
- Patent number 11,158,709
- Issue date Oct 26, 2021
- Cornell University
- Reet Chaudhuri
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...
- Publication number 20240222440
- Publication date Jul 4, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH
- Publication number 20240213140
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS
- Publication number 20240213118
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER TRANSFER DIODE OR THIN-FILM RESISTOR FOR GALLIUM NITRIDE (GAN...
- Publication number 20240203815
- Publication date Jun 20, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER TRANSFER CLAMP FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT T...
- Publication number 20240203978
- Publication date Jun 20, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...
- Publication number 20240204091
- Publication date Jun 20, 2024
- Intel Corporation
- Heli Vora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER TRANSFER TRANSISTOR FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRC...
- Publication number 20240203979
- Publication date Jun 20, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION
- Publication number 20240021725
- Publication date Jan 18, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEX FIELD-SHAPING BY FINE VARIATION OF LOCAL MATERIAL DENSITY O...
- Publication number 20230097805
- Publication date Mar 30, 2023
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...
- Publication number 20230069054
- Publication date Mar 2, 2023
- Intel Corporation
- Souvik GHOSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) SELECTIVE EPITAXIAL WINDOWS FOR INTEGRATED CI...
- Publication number 20230062922
- Publication date Mar 2, 2023
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER AND REGROWTH FOR INTEGRATED CI...
- Publication number 20230054719
- Publication date Feb 23, 2023
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230047449
- Publication date Feb 16, 2023
- Intel Corporation
- Nicole K. THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION-INDUCED 2D HOLE GASES FOR HIGH-VOLTAGE P-CHANNEL TRANS...
- Publication number 20210249513
- Publication date Aug 12, 2021
- Cornell University
- Reet Chaudhuri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF HIGH-ELECTRON-MOBILITY TRANSISTORS INCLUDING GROUP III-N STRESS...
- Publication number 20200388701
- Publication date Dec 10, 2020
- Comell University
- Austin Hickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE P-CHANNEL FET BASED ON III-NITRIDE HETEROSTRUCTURES
- Publication number 20200144407
- Publication date May 7, 2020
- Cornell University
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS

Samuel James Bader

Person

Patents Grantslast 30 patents

Gallium nitride (GaN) integrated circuit technology

Gallium nitride (GaN) selective epitaxial windows for integrated ci...

RF high-electron-mobility transistors including group III-N stress...

High-voltage p-channel FET based on III-nitride heterostructures

Polarization-induced 2D hole gases for high-voltage p-channel trans...

Patents Applicationslast 30 patents

TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...

INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH

GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS

LAYER TRANSFER DIODE OR THIN-FILM RESISTOR FOR GALLIUM NITRIDE (GAN...

LAYER TRANSFER CLAMP FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT T...

LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...

LAYER TRANSFER TRANSISTOR FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRC...

GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION

COMPLEX FIELD-SHAPING BY FINE VARIATION OF LOCAL MATERIAL DENSITY O...

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...

GALLIUM NITRIDE (GAN) SELECTIVE EPITAXIAL WINDOWS FOR INTEGRATED CI...

GALLIUM NITRIDE (GAN) LAYER TRANSFER AND REGROWTH FOR INTEGRATED CI...

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY

POLARIZATION-INDUCED 2D HOLE GASES FOR HIGH-VOLTAGE P-CHANNEL TRANS...

RF HIGH-ELECTRON-MOBILITY TRANSISTORS INCLUDING GROUP III-N STRESS...

HIGH-VOLTAGE P-CHANNEL FET BASED ON III-NITRIDE HETEROSTRUCTURES