Sangwoo Lim

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having nitridated oxide layer and method therefor
- Patent number 7,781,831
- Issue date Aug 24, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a nitrided gate dielectric
- Patent number 7,402,472
- Issue date Jul 22, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having nitridated oxide layer and method therefor
- Patent number 7,338,894
- Issue date Mar 4, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an electronic device
- Patent number 7,214,590
- Issue date May 8, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of multiple gate dielectrics by surface protection
- Patent number 7,126,172
- Issue date Oct 24, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming multiple gate oxide thickness utilizing ashing a...
- Patent number 7,041,562
- Issue date May 9, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING NITRIDATED OXIDE LAYER AND METHOD THEREFOR
- Publication number 20080087954
- Publication date Apr 17, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of forming an electronic device
- Publication number 20060223266
- Publication date Oct 5, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a nitrided gate dielectric
- Publication number 20060194423
- Publication date Aug 31, 2006
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having nitridated oxide layer and method therefor
- Publication number 20060166493
- Publication date Jul 27, 2006
- Sangwoo Lim
- B82 - NANO-TECHNOLOGY
Information Patent Application
Differentially nitrided gate dielectrics in CMOS fabrication process
- Publication number 20060084220
- Publication date Apr 20, 2006
- Freescale Semiconductor, Inc.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of multiple gate dielectrics by surface protection
- Publication number 20060079047
- Publication date Apr 13, 2006
- Freescale Semiconductor Inc.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple gate dielectric structure and method for forming
- Publication number 20050093063
- Publication date May 5, 2005
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS

Sangwoo Lim

Person

Patents Grantslast 30 patents

Semiconductor device having nitridated oxide layer and method therefor

Method of making a nitrided gate dielectric

Semiconductor device having nitridated oxide layer and method therefor

Method of forming an electronic device

Integration of multiple gate dielectrics by surface protection

Method for forming multiple gate oxide thickness utilizing ashing a...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING NITRIDATED OXIDE LAYER AND METHOD THEREFOR

Method of forming an electronic device

Method of making a nitrided gate dielectric

Semiconductor device having nitridated oxide layer and method therefor

Differentially nitrided gate dielectrics in CMOS fabrication process

Integration of multiple gate dielectrics by surface protection

Multiple gate dielectric structure and method for forming