Sangwoo Pae

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming programmable anti-fuse element
- Patent number 8,101,471
- Issue date Jan 24, 2012
- Intel Corporation
- Walid M. Hafez
- G11 - INFORMATION STORAGE
Information Patent Grant
Process charging and electrostatic damage protection in silicon-on-...
- Patent number 7,755,140
- Issue date Jul 13, 2010
- Intel Corporation
- Sangwoo Pae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a high-k gate diele...
- Patent number 7,709,909
- Issue date May 4, 2010
- Intel Corporation
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal gate electrode formed on an ann...
- Patent number 7,531,404
- Issue date May 12, 2009
- Intel Corporation
- Sangwoo Pae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a high-k gate diele...
- Patent number 7,442,983
- Issue date Oct 28, 2008
- Intel Corporation
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device with a high-k gate dielect...
- Patent number 7,381,608
- Issue date Jun 3, 2008
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a high-k gate diele...
- Patent number 7,084,038
- Issue date Aug 1, 2006
- Intel Corporation
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a high-k gate diele...
- Patent number 7,074,680
- Issue date Jul 11, 2006
- Intel Corporation
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Programmable fuse and anti-fuse elements and methods of changing co...
- Publication number 20100164603
- Publication date Jul 1, 2010
- Walid M. Hafez
- G11 - INFORMATION STORAGE
Information Patent Application
High voltage compliant apparatus for semiconductor fabrication proc...
- Publication number 20090323235
- Publication date Dec 31, 2009
- Sangwoo Pae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HIGH-K GATE DIELE...
- Publication number 20090020836
- Publication date Jan 22, 2009
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High quality silicon oxynitride transition layer for high-k/metal g...
- Publication number 20080242012
- Publication date Oct 2, 2008
- Sangwoo Pae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process charging and electrostatic damage protection in silicon-on-...
- Publication number 20080105925
- Publication date May 8, 2008
- Sangwoo Pae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate high-k/metal gate transistors using a double ca...
- Publication number 20080076216
- Publication date Mar 27, 2008
- Sangwoo Pae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods to create dual-gate dielectrics in transistors using high-K...
- Publication number 20080070367
- Publication date Mar 20, 2008
- Sangwoo Pae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a metal gate electrode formed on an ann...
- Publication number 20070045753
- Publication date Mar 1, 2007
- Sangwoo Pae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a semiconductor device having a high-k gate diele...
- Publication number 20060166447
- Publication date Jul 27, 2006
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a semiconductor device with a high-k gate dielect...
- Publication number 20060121678
- Publication date Jun 8, 2006
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a semiconductor device having a high-k gate diele...
- Publication number 20060051880
- Publication date Mar 9, 2006
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a semiconductor device having a high-k gate diele...
- Publication number 20060051882
- Publication date Mar 9, 2006
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS

Sangwoo Pae

Person

Patents Grantslast 30 patents

Method of forming programmable anti-fuse element

Process charging and electrostatic damage protection in silicon-on-...

Method for making a semiconductor device having a high-k gate diele...

Semiconductor device having a metal gate electrode formed on an ann...

Method for making a semiconductor device having a high-k gate diele...

Method for making a semiconductor device with a high-k gate dielect...

Method for making a semiconductor device having a high-k gate diele...

Method for making a semiconductor device having a high-k gate diele...

Patents Applicationslast 30 patents

Programmable fuse and anti-fuse elements and methods of changing co...

High voltage compliant apparatus for semiconductor fabrication proc...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HIGH-K GATE DIELE...

High quality silicon oxynitride transition layer for high-k/metal g...

Process charging and electrostatic damage protection in silicon-on-...

Method to fabricate high-k/metal gate transistors using a double ca...

Methods to create dual-gate dielectrics in transistors using high-K...

Semiconductor device having a metal gate electrode formed on an ann...

Method for making a semiconductor device having a high-k gate diele...

Method for making a semiconductor device with a high-k gate dielect...

Method for making a semiconductor device having a high-k gate diele...

Method for making a semiconductor device having a high-k gate diele...