Sansaptak Dasgupta

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 12,125,888
- Issue date Oct 22, 2024
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide for group III-nitride devices and methods of fabrication
- Patent number 12,080,763
- Issue date Sep 3, 2024
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable capacitance device with multiple two-dimensional electron...
- Patent number 12,034,085
- Issue date Jul 9, 2024
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistor arrangements for reducing nonlinearity of off-stat...
- Patent number 12,027,613
- Issue date Jul 2, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel polarization junction III-N transistors
- Patent number 11,942,378
- Issue date Mar 26, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N multichip modules and methods of fabrication
- Patent number 11,908,687
- Issue date Feb 20, 2024
- Intel Corporation
- Khaled Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice FINFET with tunable drive current capability
- Patent number 11,881,511
- Issue date Jan 23, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with contacts of modified widths
- Patent number 11,848,362
- Issue date Dec 19, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride light emitting devices including a polarization j...
- Patent number 11,799,057
- Issue date Oct 24, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-N transistors and semiconductor layer transfer
- Patent number 11,791,221
- Issue date Oct 17, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit components with dummy structures
- Patent number 11,784,121
- Issue date Oct 10, 2023
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including first and second semiconductor materials betw...
- Patent number 11,777,022
- Issue date Oct 3, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...
- Patent number 11,757,027
- Issue date Sep 12, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 11,728,346
- Issue date Aug 15, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-Nitride devices on SOI substrates having a compliant layer
- Patent number 11,715,791
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus to form silicon-based transistors on group II...
- Patent number 11,715,799
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio non-planar capacitors formed via cavity fill
- Patent number 11,710,765
- Issue date Jul 25, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Acoustic resonator structure
- Patent number 11,705,882
- Issue date Jul 18, 2023
- Intel Corporation
- Paul Fischer
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Monolithic integration of a thin film transistor over a complimenta...
- Patent number 11,699,704
- Issue date Jul 11, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with local stressors for threshold voltage control
- Patent number 11,670,709
- Issue date Jun 6, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit with indium nitride quantum well
- Patent number 11,670,637
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N nanostructures formed via cavity fill
- Patent number 11,670,686
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film bulk acoustic resonator (FBAR) devices for high frequency RF f...
- Patent number 11,671,075
- Issue date Jun 6, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
III-N metal-insulator-semiconductor field effect transistors with m...
- Patent number 11,664,417
- Issue date May 30, 2023
- Intel Corporation
- Walid Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with ion- or fixed charge-based field plate structures
- Patent number 11,658,217
- Issue date May 23, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors integrated with thin-film transistors having grad...
- Patent number 11,652,143
- Issue date May 16, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro light-emitting diode display fabrication and assembly
- Patent number 11,637,093
- Issue date Apr 25, 2023
- Intel Corporation
- Khaled Ahmed
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Antenna gate field plate on 2DEG planar FET
- Patent number 11,626,513
- Issue date Apr 11, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FBAR devices having multiple epitaxial layers stacked on a same sub...
- Patent number 11,616,488
- Issue date Mar 28, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRAT...
- Publication number 20240213331
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...
- Publication number 20230207446
- Publication date Jun 29, 2023
- Tahoe Research, Ltd.
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR THERMOELECTRIC-ENHANCED COOLING
- Publication number 20230207421
- Publication date Jun 29, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GROUP III-NITROGEN AND SILICON TRANSISTORS ON THE SAME DIE
- Publication number 20230197732
- Publication date Jun 22, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE SEMICONDUCTOR ARRAY WITH HETEROGENEOUS ELECTRODES...
- Publication number 20230102318
- Publication date Mar 30, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230090106
- Publication date Mar 23, 2023
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N DIODES WITH N-DOPED WELLS AND CAPPING LAYERS
- Publication number 20230068318
- Publication date Mar 2, 2023
- Intel Corporation
- Richard Geiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE CAPACITANCE DEVICE WITH MULTIPLE TWO-DIMENSIONAL ELECTRON...
- Publication number 20220320350
- Publication date Oct 6, 2022
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE FOR GROUP III-NITRIDE DEVICES AND METHODS OF FABRICATION
- Publication number 20220293738
- Publication date Sep 15, 2022
- Intel Corporation
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO NON-PLANAR CAPACITORS FORMED VIA CAVITY FILL
- Publication number 20220246717
- Publication date Aug 4, 2022
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPONENTS WITH DUMMY STRUCTURES
- Publication number 20220216149
- Publication date Jul 7, 2022
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL POLARIZATION JUNCTION III-N TRANSISTORS
- Publication number 20220172996
- Publication date Jun 2, 2022
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N MULTICHIP MODULES AND METHODS OF FABRICATION
- Publication number 20220122842
- Publication date Apr 21, 2022
- Intel Corporation
- Khaled Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS TO FORM SILICON-BASED TRANSISTORS ON GROUP II...
- Publication number 20220077316
- Publication date Mar 10, 2022
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE LIGHT EMITTING DEVICES INCLUDING A POLARIZATION J...
- Publication number 20220077349
- Publication date Mar 10, 2022
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N TRANSISTORS WITH INTEGRATED LINEARIZATION DEVICES
- Publication number 20220068910
- Publication date Mar 3, 2022
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE (III-N) DEVICES WITH REDUCED CONTACT RESISTANCE A...
- Publication number 20220037322
- Publication date Feb 3, 2022
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N MULTICHIP MODULES AND METHODS OF FABRICATION
- Publication number 20210375620
- Publication date Dec 2, 2021
- Intel Corporation
- Khaled Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE (III-N) DEVICES WITH REDUCED CONTACT RESISTANCE A...
- Publication number 20210367047
- Publication date Nov 25, 2021
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC TRANSISTOR SOURCE/DRAIN FORMATION USING ANGLED ETCHING
- Publication number 20210210620
- Publication date Jul 8, 2021
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...
- Publication number 20210202374
- Publication date Jul 1, 2021
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V TRANSISTORS WITH RESISTIVE GATE CONTACTS
- Publication number 20210167200
- Publication date Jun 3, 2021
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR INCLUDING MULTILAYER DIELECTRIC STACK
- Publication number 20210118983
- Publication date Apr 22, 2021
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF A THIN FILM TRANSISTOR OVER A COMPLIMENTA...
- Publication number 20210074702
- Publication date Mar 11, 2021
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE (III-N) DEVICES WITH REDUCED CONTACT RESISTANCE A...
- Publication number 20210066293
- Publication date Mar 4, 2021
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE POLARIZATION JUNCTION DIODES
- Publication number 20210005759
- Publication date Jan 7, 2021
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE ANTENNA DIODE
- Publication number 20200411505
- Publication date Dec 31, 2020
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE SCHOTTKY DIODE
- Publication number 20200411699
- Publication date Dec 31, 2020
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE DEVICES ON SOI SUBSTRATES HAVING A COMPLIANT LAYER
- Publication number 20200411678
- Publication date Dec 31, 2020
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE LIGHT EMITTING DEVICES INCLUDING A POLARIZATION J...
- Publication number 20200411722
- Publication date Dec 31, 2020
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS

Sansaptak Dasgupta

Person

Patents Grantslast 30 patents

Group III-nitride (III-N) devices with reduced contact resistance a...

Silicide for group III-nitride devices and methods of fabrication

Variable capacitance device with multiple two-dimensional electron...

III-N transistor arrangements for reducing nonlinearity of off-stat...

Tunnel polarization junction III-N transistors

III-N multichip modules and methods of fabrication

Superlattice FINFET with tunable drive current capability

III-N transistors with contacts of modified widths

Group III-nitride light emitting devices including a polarization j...

Integration of III-N transistors and semiconductor layer transfer

Integrated circuit components with dummy structures

Transistors including first and second semiconductor materials betw...

E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...

Group III-nitride (III-N) devices with reduced contact resistance a...

Group III-Nitride devices on SOI substrates having a compliant layer

Charge-induced threshold voltage tuning in III-N transistors

Methods and apparatus to form silicon-based transistors on group II...

High aspect ratio non-planar capacitors formed via cavity fill

Acoustic resonator structure

Monolithic integration of a thin film transistor over a complimenta...

III-N transistors with local stressors for threshold voltage control

Logic circuit with indium nitride quantum well

III-N nanostructures formed via cavity fill

Film bulk acoustic resonator (FBAR) devices for high frequency RF f...

III-N metal-insulator-semiconductor field effect transistors with m...

Transistors with ion- or fixed charge-based field plate structures

III-N transistors integrated with thin-film transistors having grad...

Micro light-emitting diode display fabrication and assembly

Antenna gate field plate on 2DEG planar FET

FBAR devices having multiple epitaxial layers stacked on a same sub...

Patents Applicationslast 30 patents

GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRAT...

MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...

TECHNOLOGIES FOR THERMOELECTRIC-ENHANCED COOLING

INTEGRATED GROUP III-NITROGEN AND SILICON TRANSISTORS ON THE SAME DIE

GROUP III-NITRIDE SEMICONDUCTOR ARRAY WITH HETEROGENEOUS ELECTRODES...

GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY

III-N DIODES WITH N-DOPED WELLS AND CAPPING LAYERS

VARIABLE CAPACITANCE DEVICE WITH MULTIPLE TWO-DIMENSIONAL ELECTRON...

SILICIDE FOR GROUP III-NITRIDE DEVICES AND METHODS OF FABRICATION

HIGH ASPECT RATIO NON-PLANAR CAPACITORS FORMED VIA CAVITY FILL

INTEGRATED CIRCUIT COMPONENTS WITH DUMMY STRUCTURES

TUNNEL POLARIZATION JUNCTION III-N TRANSISTORS

III-N MULTICHIP MODULES AND METHODS OF FABRICATION

METHODS AND APPARATUS TO FORM SILICON-BASED TRANSISTORS ON GROUP II...

GROUP III-NITRIDE LIGHT EMITTING DEVICES INCLUDING A POLARIZATION J...

III-N TRANSISTORS WITH INTEGRATED LINEARIZATION DEVICES

GROUP III-NITRIDE (III-N) DEVICES WITH REDUCED CONTACT RESISTANCE A...

III-N MULTICHIP MODULES AND METHODS OF FABRICATION

GROUP III-NITRIDE (III-N) DEVICES WITH REDUCED CONTACT RESISTANCE A...

MICROELECTRONIC TRANSISTOR SOURCE/DRAIN FORMATION USING ANGLED ETCHING

MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...

III-V TRANSISTORS WITH RESISTIVE GATE CONTACTS

CAPACITOR INCLUDING MULTILAYER DIELECTRIC STACK

MONOLITHIC INTEGRATION OF A THIN FILM TRANSISTOR OVER A COMPLIMENTA...

GROUP III-NITRIDE (III-N) DEVICES WITH REDUCED CONTACT RESISTANCE A...

GROUP III-NITRIDE POLARIZATION JUNCTION DIODES

GROUP III-NITRIDE ANTENNA DIODE

GROUP III-NITRIDE SCHOTTKY DIODE

GROUP III-NITRIDE DEVICES ON SOI SUBSTRATES HAVING A COMPLIANT LAYER

GROUP III-NITRIDE LIGHT EMITTING DEVICES INCLUDING A POLARIZATION J...