Santiago Serrano Guisan

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy (PMA) and i...
- Patent number 11,683,994
- Issue date Jun 20, 2023
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for measuring saturation magnetization of magnetic films and...
- Patent number 11,609,296
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Grant
Ferromagnetic resonance (FMR) electrical testing apparatus for spin...
- Patent number 11,397,226
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy (PMA) and i...
- Patent number 11,264,566
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimal thickness, low switching voltage magnetic free layers using...
- Patent number 11,264,560
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level...
- Patent number 11,237,240
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Grant
Scanning ferromagnetic resonance (FMR) for wafer-level characteriza...
- Patent number 11,092,661
- Issue date Aug 17, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride diffusion barrier structure for spintronic applications
- Patent number 10,950,782
- Issue date Mar 16, 2021
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for measuring saturation magnetization of magnetic films and...
- Patent number 10,788,561
- Issue date Sep 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Grant
Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level...
- Patent number 10,754,000
- Issue date Aug 25, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Grant
Scanning ferromagnetic resonance (FMR) for wafer-level characteriza...
- Patent number 10,401,464
- Issue date Sep 3, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...
- Publication number 20220149272
- Publication date May 12, 2022
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Application
Nitride Diffusion Barrier Structure for Spintronic Applications
- Publication number 20210175414
- Publication date Jun 10, 2021
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Measuring Saturation Magnetization of Magnetic Films and...
- Publication number 20210025958
- Publication date Jan 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...
- Publication number 20200403143
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...
- Publication number 20200403149
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Application
Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spin...
- Publication number 20200393525
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G01 - MEASURING TESTING
Information Patent Application
Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level...
- Publication number 20200386840
- Publication date Dec 10, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Nitride Diffusion Barrier Structure for Spintronic Applications
- Publication number 20200266334
- Publication date Aug 20, 2020
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Measuring Saturation magnetization of Magnetic Films and...
- Publication number 20200116811
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level...
- Publication number 20200049787
- Publication date Feb 13, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characteriza...
- Publication number 20190331752
- Publication date Oct 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spin...
- Publication number 20190227132
- Publication date Jul 25, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G01 - MEASURING TESTING
Information Patent Application
Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characteriza...
- Publication number 20180267128
- Publication date Sep 20, 2018
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS

Santiago Serrano Guisan

Person

Patents Grantslast 30 patents

Magnetic element with perpendicular magnetic anisotropy (PMA) and i...

Method for measuring saturation magnetization of magnetic films and...

Ferromagnetic resonance (FMR) electrical testing apparatus for spin...

Magnetic element with perpendicular magnetic anisotropy (PMA) and i...

Minimal thickness, low switching voltage magnetic free layers using...

Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level...

Scanning ferromagnetic resonance (FMR) for wafer-level characteriza...

Nitride diffusion barrier structure for spintronic applications

Method for measuring saturation magnetization of magnetic films and...

Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level...

Scanning ferromagnetic resonance (FMR) for wafer-level characteriza...

Patents Applicationslast 30 patents

Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...

Nitride Diffusion Barrier Structure for Spintronic Applications

Method for Measuring Saturation Magnetization of Magnetic Films and...

Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...

Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...

Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spin...

Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level...

Nitride Diffusion Barrier Structure for Spintronic Applications

Method for Measuring Saturation magnetization of Magnetic Films and...

Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level...

Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characteriza...

Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spin...

Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characteriza...