Saptharishi Sriram

Person

Cary, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium Nitride high-electron mobility transistors with p-type laye...
- Patent number 12,142,674
- Issue date Nov 12, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having unit cell transistors with smoothed tu...
- Patent number 12,034,072
- Issue date Jul 9, 2024
- MACOM Technology Solutions Holdings, Inc.
- Yueying Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits and group III-nitride high-electron mobility transistors w...
- Patent number 11,929,428
- Issue date Mar 12, 2024
- Wolfspeed, Inc.
- Thomas J. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride high-electron mobility transistors with buried p-...
- Patent number 11,862,719
- Issue date Jan 2, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with enhanced reliability
- Patent number 11,658,234
- Issue date May 23, 2023
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic microwave integrated circuits having both enhancement-mo...
- Patent number 11,594,628
- Issue date Feb 28, 2023
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for reducing electron concentration and process for redu...
- Patent number 11,476,359
- Issue date Oct 18, 2022
- Wolfspeed, Inc.
- Jia Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high-electron mobility transistors with p-type laye...
- Patent number 11,430,882
- Issue date Aug 30, 2022
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite-channel high electron mobility transistor
- Patent number 11,276,765
- Issue date Mar 15, 2022
- Wolfspeed, Inc.
- Sriram Saptharishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode semiconductor devices including current dependent re...
- Patent number 11,244,831
- Issue date Feb 8, 2022
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a plurality of unit cell transistors t...
- Patent number 10,978,583
- Issue date Apr 13, 2021
- Cree, Inc.
- Yueying Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride high-electron mobility transistors with buried p-...
- Patent number 10,892,356
- Issue date Jan 12, 2021
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic microwave integrated circuits having both enhancement-mo...
- Patent number 10,861,963
- Issue date Dec 8, 2020
- Cree, Inc.
- Saptharishi Sriram
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gallium nitride high-electron mobility transistors with deep implan...
- Patent number 10,840,334
- Issue date Nov 17, 2020
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a plurality of unit cell transistors t...
- Patent number 10,615,273
- Issue date Apr 7, 2020
- Cree, Inc.
- Yueying Liu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Monolithic microwave integrated circuits having both enhancement-mo...
- Patent number 10,516,043
- Issue date Dec 24, 2019
- Cree, Inc.
- Saptharishi Sriram
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Depletion mode semiconductor devices including current dependent re...
- Patent number 10,354,879
- Issue date Jul 16, 2019
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high-electron mobility transistors with deep implan...
- Patent number 10,192,980
- Issue date Jan 29, 2019
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed field plate transistor structures
- Patent number 9,847,411
- Issue date Dec 19, 2017
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode structures with GaN cap layers
- Patent number 9,755,059
- Issue date Sep 5, 2017
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode structures for GaN HEMTs
- Patent number 9,679,981
- Issue date Jun 13, 2017
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky contact
- Patent number 9,640,627
- Issue date May 2, 2017
- Cree, Inc.
- Helmut Hagleitner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved field plate
- Patent number 9,608,078
- Issue date Mar 28, 2017
- Cree, Inc.
- Helmut Hagleitner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel junction field effect transistors having self-aligned source...
- Patent number 9,356,129
- Issue date May 31, 2016
- Cree, Inc.
- Fabian Radulescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mix doping of a semi-insulating Group III nitride
- Patent number 9,306,009
- Issue date Apr 5, 2016
- Cree, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel junction field effect transistors having self-aligned source...
- Patent number 9,202,903
- Issue date Dec 1, 2015
- Cree, Inc.
- Fabian Radulescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride field effect transistor switches
- Patent number 8,421,122
- Issue date Apr 16, 2013
- Cree, Inc.
- Thomas J. Smith
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Schottky diodes including polysilicon having low barrier heights an...
- Patent number 8,304,783
- Issue date Nov 6, 2012
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having varying electrode widths to provide no...
- Patent number 8,203,185
- Issue date Jun 19, 2012
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode having reduced on-resistance and associated method of manufac...
- Patent number 8,138,583
- Issue date Mar 20, 2012
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING FIELD PLATES
- Publication number 20240162304
- Publication date May 16, 2024
- MACOM Technology Solutions Holdings, Inc.
- Jeremy Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...
- Publication number 20240105829
- Publication date Mar 28, 2024
- Wolfspeed, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH A BURIED...
- Publication number 20230197841
- Publication date Jun 22, 2023
- Wolfspeed, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SELECTIVE CHANNEL LAYER DOPING
- Publication number 20220376105
- Publication date Nov 24, 2022
- Wolfspeed, Inc.
- Jia Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE TRANSISTORS WITH BACK BARRIER STRUCTURES AND BURI...
- Publication number 20220367697
- Publication date Nov 17, 2022
- CREE, INC.
- Christer HALLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS AND GROUP III-NITRIDE TRANSISTORS WITH BURIED P-LAYERS AND...
- Publication number 20220367695
- Publication date Nov 17, 2022
- Cree, Inc.
- Thomas J. SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS AND GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS W...
- Publication number 20220367696
- Publication date Nov 17, 2022
- Cree, Inc.
- Thomas J. SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH P-TYPE LAYE...
- Publication number 20220344500
- Publication date Oct 27, 2022
- Wolfspeed, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ENHANCED RELIABILITY
- Publication number 20220130985
- Publication date Apr 28, 2022
- Cree, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING A PLURALITY OF UNIT CELL TRANSISTORS T...
- Publication number 20210193825
- Publication date Jun 24, 2021
- Cree, Inc.
- Yueying Liu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH GATE CONN...
- Publication number 20210167199
- Publication date Jun 3, 2021
- Cree, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS HAVING BOTH ENHANCEMENT-MO...
- Publication number 20210119029
- Publication date Apr 22, 2021
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride High-Electron Mobility Transistors with Buried P-...
- Publication number 20210104623
- Publication date Apr 8, 2021
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite-Channel High Electron Mobility Transistor
- Publication number 20200411663
- Publication date Dec 31, 2020
- Cree, Inc.
- Sriram Saptharishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures for Reducing Electron Concentration and Process for Redu...
- Publication number 20200303533
- Publication date Sep 24, 2020
- Cree, Inc.
- Jia Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS HAVING BOTH ENHANCEMENT-MO...
- Publication number 20200066892
- Publication date Feb 27, 2020
- Cree, Inc.
- Saptharishi Sriram
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
DEPLETION MODE SEMICONDUCTOR DEVICES INCLUDING CURRENT DEPENDENT RE...
- Publication number 20190333767
- Publication date Oct 31, 2019
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride High-Electron Mobility Transistors with Buried P-...
- Publication number 20190237569
- Publication date Aug 1, 2019
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride High-Electron Mobility Transistors with Deep Implan...
- Publication number 20190229187
- Publication date Jul 25, 2019
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING A PLURALITY OF UNIT CELL TRANSISTORS T...
- Publication number 20190109222
- Publication date Apr 11, 2019
- Cree, Inc.
- Yueying Liu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICES HAVING A PLURALITY OF UNIT CELL TRANSISTORS T...
- Publication number 20180374943
- Publication date Dec 27, 2018
- Cree, Inc.
- Yueying Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH P-TYPE LAYE...
- Publication number 20170373176
- Publication date Dec 28, 2017
- Cree Fayetteville, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride High-Electron Mobility Transistors with Deep Implan...
- Publication number 20170373178
- Publication date Dec 28, 2017
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPLETION MODE SEMICONDUCTOR DEVICES INCLUDING CURRENT DEPENDENT RE...
- Publication number 20170373179
- Publication date Dec 28, 2017
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED FIELD PLATE
- Publication number 20160111503
- Publication date Apr 21, 2016
- Cree, Inc.
- Helmut Hagleitner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunnel Junction Field Effect Transistors Having Self-Aligned Source...
- Publication number 20160087088
- Publication date Mar 24, 2016
- Cree, Inc.
- Fabian Radulescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED FIELD PLATE TRANSISTOR STRUCTURES
- Publication number 20140361342
- Publication date Dec 11, 2014
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCODE STRUCTURES WITH GaN CAP LAYERS
- Publication number 20140361343
- Publication date Dec 11, 2014
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCODE STRUCTURES FOR GaN HEMTs
- Publication number 20140361341
- Publication date Dec 11, 2014
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL JUNCTION FIELD EFFECT TRANSISTORS HAVING SELF-ALIGNED SOURCE...
- Publication number 20140246699
- Publication date Sep 4, 2014
- Cree, Inc.
- Fabian Radulescu
- H01 - BASIC ELECTRIC ELEMENTS

Saptharishi Sriram

Person

Patents Grantslast 30 patents

Gallium Nitride high-electron mobility transistors with p-type laye...

Semiconductor devices having unit cell transistors with smoothed tu...

Circuits and group III-nitride high-electron mobility transistors w...

Group III-nitride high-electron mobility transistors with buried p-...

Field effect transistor with enhanced reliability

Monolithic microwave integrated circuits having both enhancement-mo...

Structures for reducing electron concentration and process for redu...

Gallium nitride high-electron mobility transistors with p-type laye...

Composite-channel high electron mobility transistor

Depletion mode semiconductor devices including current dependent re...

Semiconductor devices having a plurality of unit cell transistors t...

Group III-nitride high-electron mobility transistors with buried p-...

Monolithic microwave integrated circuits having both enhancement-mo...

Gallium nitride high-electron mobility transistors with deep implan...

Semiconductor devices having a plurality of unit cell transistors t...

Monolithic microwave integrated circuits having both enhancement-mo...

Depletion mode semiconductor devices including current dependent re...

Gallium nitride high-electron mobility transistors with deep implan...

Recessed field plate transistor structures

Cascode structures with GaN cap layers

Cascode structures for GaN HEMTs

Schottky contact

Semiconductor device with improved field plate

Tunnel junction field effect transistors having self-aligned source...

Mix doping of a semi-insulating Group III nitride

Tunnel junction field effect transistors having self-aligned source...

High power gallium nitride field effect transistor switches

Schottky diodes including polysilicon having low barrier heights an...

Semiconductor devices having varying electrode widths to provide no...

Diode having reduced on-resistance and associated method of manufac...

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR INCLUDING FIELD PLATES

GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...

GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH A BURIED...

FIELD EFFECT TRANSISTOR WITH SELECTIVE CHANNEL LAYER DOPING

GROUP III-NITRIDE TRANSISTORS WITH BACK BARRIER STRUCTURES AND BURI...

CIRCUITS AND GROUP III-NITRIDE TRANSISTORS WITH BURIED P-LAYERS AND...

CIRCUITS AND GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS W...

GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH P-TYPE LAYE...

FIELD EFFECT TRANSISTOR WITH ENHANCED RELIABILITY

SEMICONDUCTOR DEVICES HAVING A PLURALITY OF UNIT CELL TRANSISTORS T...

GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH GATE CONN...

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS HAVING BOTH ENHANCEMENT-MO...

Group III-Nitride High-Electron Mobility Transistors with Buried P-...

Composite-Channel High Electron Mobility Transistor

Structures for Reducing Electron Concentration and Process for Redu...

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS HAVING BOTH ENHANCEMENT-MO...

DEPLETION MODE SEMICONDUCTOR DEVICES INCLUDING CURRENT DEPENDENT RE...

Group III-Nitride High-Electron Mobility Transistors with Buried P-...

Gallium Nitride High-Electron Mobility Transistors with Deep Implan...

SEMICONDUCTOR DEVICES HAVING A PLURALITY OF UNIT CELL TRANSISTORS T...

SEMICONDUCTOR DEVICES HAVING A PLURALITY OF UNIT CELL TRANSISTORS T...

GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH P-TYPE LAYE...

Gallium Nitride High-Electron Mobility Transistors with Deep Implan...

DEPLETION MODE SEMICONDUCTOR DEVICES INCLUDING CURRENT DEPENDENT RE...

SEMICONDUCTOR DEVICE WITH IMPROVED FIELD PLATE

Tunnel Junction Field Effect Transistors Having Self-Aligned Source...

RECESSED FIELD PLATE TRANSISTOR STRUCTURES

CASCODE STRUCTURES WITH GaN CAP LAYERS

CASCODE STRUCTURES FOR GaN HEMTs

TUNNEL JUNCTION FIELD EFFECT TRANSISTORS HAVING SELF-ALIGNED SOURCE...