Sarunya Bangsaruntip

Person

Mount Kisco, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low loss conductive line using bridged conductor
- Patent number 11,889,770
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Salvatore Bernardo Olivadese
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Metal surface protection
- Patent number 11,857,997
- Issue date Jan 2, 2024
- International Business Machines Corporation
- Ali Afzali-Ardakani
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Superconductor devices having buried quasiparticle traps
- Patent number 11,515,461
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Baleegh Abdo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fabrication of nanomaterial T-gate transistors with charge transfer...
- Patent number 10,546,924
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Sarunya Bangsaruntip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Placement of carbon nanotube guided by DSA patterning
- Patent number 10,374,179
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Placement of carbon nanotube guided by DSA patterning
- Patent number 10,243,156
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nanomaterial T-gate transistors with charge transfer...
- Patent number 9,748,334
- Issue date Aug 29, 2017
- International Business Machines Corporation
- Sarunya Bangsaruntip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Generation of multiple diameter nanowire field effect transistors
- Patent number 9,728,619
- Issue date Aug 8, 2017
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tapered nanowire structure with reduced off current
- Patent number 9,514,937
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Jeffrey W. Sleight
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire floating gate transistor
- Patent number 9,343,142
- Issue date May 17, 2016
- Globalfoundries Inc.
- Sarunya Bangsaruntip
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for forming a surrounding gate for a nanowire using a sacri...
- Patent number 9,337,264
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Planar and nanowire field effect transistors
- Patent number 9,184,301
- Issue date Nov 10, 2015
- GLOBALFOUNDRIES Inc.
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire PIN tunnel field effect devices
- Patent number 9,105,482
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire capacitor for bidirectional operation
- Patent number 9,064,942
- Issue date Jun 23, 2015
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire capacitor for bidirectional operation
- Patent number 9,035,383
- Issue date May 19, 2015
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for forming a surrounding gate for a nanowire using a sacri...
- Patent number 9,029,834
- Issue date May 12, 2015
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
TFET with nanowire source
- Patent number 8,946,680
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Epitaxially thickened doped or undoped core nanowire FET structure...
- Patent number 8,936,972
- Issue date Jan 20, 2015
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire field effect transistor device
- Patent number 8,921,825
- Issue date Dec 30, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tapered nanowire structure with reduced off current
- Patent number 8,901,659
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Jeffrey W. Sleight
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of forming contacts for nanowire field effect transistors
- Patent number 8,835,231
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire FET with trapezoid gate structure
- Patent number 8,829,625
- Issue date Sep 9, 2014
- International Business Machines Corporation
- Jeffrey W. Sleight
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire FET and FinFET hybrid technology
- Patent number 8,809,957
- Issue date Aug 19, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Replacement gate fin first wire last gate all around devices
- Patent number 8,809,131
- Issue date Aug 19, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped core trigate FET structure and method
- Patent number 8,802,535
- Issue date Aug 12, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Directionally etched nanowire field effect transistors
- Patent number 8,772,755
- Issue date Jul 8, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire tunnel field effect transistors
- Patent number 8,723,162
- Issue date May 13, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire pin tunnel field effect devices
- Patent number 8,722,492
- Issue date May 13, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid CMOS technology with nanowire devices and double gated plana...
- Patent number 8,716,072
- Issue date May 6, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire field effect transistor device
- Patent number 8,685,823
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
LONG-RANGE COUPLING QUBITS IN QUANTUM COMPUTING WITH ENERGY LOSS PR...
- Publication number 20240169232
- Publication date May 23, 2024
- International Business Machines Corporation
- Aaron Finck
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONTROLLING INTERACTION BETWEEN COUPLED SUPERCONDUCTING QUANTUM BITS
- Publication number 20230401476
- Publication date Dec 14, 2023
- International Business Machines Corporation
- Aaron Finck
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METAL SURFACE PROTECTION
- Publication number 20210394229
- Publication date Dec 23, 2021
- International Business Machines Corporation
- Ali Afzali-Ardakani
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
LOW LOSS CONDUCTIVE LINE USING BRIDGED CONDUCTOR
- Publication number 20210328125
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Salvatore Bernardo Olivadese
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SUPERCONDUCTOR DEVICES HAVING BURIED QUASIPARTICLE TRAPS
- Publication number 20210280766
- Publication date Sep 9, 2021
- International Business Machines Corporation
- Baleegh Abdo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Placement of Carbon Nanotube Guided by DSA Patterning
- Publication number 20190165289
- Publication date May 30, 2019
- International Business Machines Corporation
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Placement of Carbon Nanotube Guided by DSA Patterning
- Publication number 20180269412
- Publication date Sep 20, 2018
- International Business Machines Corporation
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NANOMATERIAL T-GATE TRANSISTORS WITH CHARGE TRANSFER...
- Publication number 20170244055
- Publication date Aug 24, 2017
- International Business Machines Corporation
- Sarunya Bangsaruntip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NANOMATERIAL T-GATE TRANSISTORS WITH CHARGE TRANSFER...
- Publication number 20170244054
- Publication date Aug 24, 2017
- International Business Machines Corporation
- Sarunya Bangsaruntip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for Forming a Surrounding Gate for a Nanowire Using a Sacri...
- Publication number 20150194487
- Publication date Jul 9, 2015
- International Business Machines Corporation
- Sarunya Bangsaruntip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAPERED NANOWIRE STRUCTURE WITH REDUCED OFF CURRENT
- Publication number 20140370667
- Publication date Dec 18, 2014
- Jeffrey W. Sleight
- B82 - NANO-TECHNOLOGY
Information Patent Application
GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS
- Publication number 20140239254
- Publication date Aug 28, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
TFET with Nanowire Source
- Publication number 20140239258
- Publication date Aug 28, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanowire Capacitor for Bidirectional Operation
- Publication number 20140209864
- Publication date Jul 31, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanowire Capacitor for Bidirectional Operation
- Publication number 20140209854
- Publication date Jul 31, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure...
- Publication number 20140034908
- Publication date Feb 6, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure...
- Publication number 20140034905
- Publication date Feb 6, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanowire FET and FINFET Hybrid Technology
- Publication number 20140027855
- Publication date Jan 30, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
Replacement Gate Fin First Wire Last Gate All Around Devices
- Publication number 20140021538
- Publication date Jan 23, 2014
- International Business Machines Corporation
- Sarunya Bangsaruntip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doped Core Trigate FET Structure and Method
- Publication number 20130292701
- Publication date Nov 7, 2013
- International Business Machines Corporation
- Sarunya Bangsaruntip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STEP HYDROGEN ANNEALING PROCESS FOR CREATING UNIFORM NON-PLANAR...
- Publication number 20130237039
- Publication date Sep 12, 2013
- International Business Machines Corporation
- Jeffrey W. Sleight
- B82 - NANO-TECHNOLOGY
Information Patent Application
TWO-STEP HYDROGEN ANNEALING PROCESS FOR CREATING UNIFORM NON-PLANAR...
- Publication number 20130237038
- Publication date Sep 12, 2013
- International Business Machines Corporation
- Jeffrey W. Sleight
- B82 - NANO-TECHNOLOGY
Information Patent Application
Tapered Nanowire Structure With Reduced Off Current
- Publication number 20130207079
- Publication date Aug 15, 2013
- International Business Machines Corporation
- Jeffrey W. Sleight
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanowire Field Effect Transistors
- Publication number 20130175502
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANOWIRE FLOATING GATE TRANSISTOR
- Publication number 20130175597
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Sarunya Bangsaruntip
- G11 - INFORMATION STORAGE
Information Patent Application
Nanowire Field Effect Transistors
- Publication number 20130178019
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanowire Field Effect Transistor Device
- Publication number 20130112937
- Publication date May 9, 2013
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanowire Field Effect Transistor Device
- Publication number 20130112938
- Publication date May 9, 2013
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanowire FET and FINFET Hybrid Technology
- Publication number 20130105897
- Publication date May 2, 2013
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Application
Hybrid CMOS Technology With Nanowire Devices and Double Gated Plana...
- Publication number 20130026451
- Publication date Jan 31, 2013
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY

Sarunya Bangsaruntip

Person

Patents Grantslast 30 patents

Low loss conductive line using bridged conductor

Metal surface protection

Superconductor devices having buried quasiparticle traps

Fabrication of nanomaterial T-gate transistors with charge transfer...

Placement of carbon nanotube guided by DSA patterning

Placement of carbon nanotube guided by DSA patterning

Fabrication of nanomaterial T-gate transistors with charge transfer...

Generation of multiple diameter nanowire field effect transistors

Tapered nanowire structure with reduced off current

Nanowire floating gate transistor

Process for forming a surrounding gate for a nanowire using a sacri...

Planar and nanowire field effect transistors

Nanowire PIN tunnel field effect devices

Nanowire capacitor for bidirectional operation

Nanowire capacitor for bidirectional operation

Process for forming a surrounding gate for a nanowire using a sacri...

TFET with nanowire source

Epitaxially thickened doped or undoped core nanowire FET structure...

Nanowire field effect transistor device

Tapered nanowire structure with reduced off current

Methods of forming contacts for nanowire field effect transistors

Nanowire FET with trapezoid gate structure

Nanowire FET and FinFET hybrid technology

Replacement gate fin first wire last gate all around devices

Doped core trigate FET structure and method

Directionally etched nanowire field effect transistors

Nanowire tunnel field effect transistors

Nanowire pin tunnel field effect devices

Hybrid CMOS technology with nanowire devices and double gated plana...

Nanowire field effect transistor device

Patents Applicationslast 30 patents

LONG-RANGE COUPLING QUBITS IN QUANTUM COMPUTING WITH ENERGY LOSS PR...

CONTROLLING INTERACTION BETWEEN COUPLED SUPERCONDUCTING QUANTUM BITS

METAL SURFACE PROTECTION

LOW LOSS CONDUCTIVE LINE USING BRIDGED CONDUCTOR

SUPERCONDUCTOR DEVICES HAVING BURIED QUASIPARTICLE TRAPS

Placement of Carbon Nanotube Guided by DSA Patterning

Placement of Carbon Nanotube Guided by DSA Patterning

FABRICATION OF NANOMATERIAL T-GATE TRANSISTORS WITH CHARGE TRANSFER...

FABRICATION OF NANOMATERIAL T-GATE TRANSISTORS WITH CHARGE TRANSFER...

Process for Forming a Surrounding Gate for a Nanowire Using a Sacri...

TAPERED NANOWIRE STRUCTURE WITH REDUCED OFF CURRENT

GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS

TFET with Nanowire Source

Nanowire Capacitor for Bidirectional Operation

Nanowire Capacitor for Bidirectional Operation

Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure...

Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure...

Nanowire FET and FINFET Hybrid Technology

Replacement Gate Fin First Wire Last Gate All Around Devices

Doped Core Trigate FET Structure and Method

TWO-STEP HYDROGEN ANNEALING PROCESS FOR CREATING UNIFORM NON-PLANAR...

TWO-STEP HYDROGEN ANNEALING PROCESS FOR CREATING UNIFORM NON-PLANAR...

Tapered Nanowire Structure With Reduced Off Current

Nanowire Field Effect Transistors

NANOWIRE FLOATING GATE TRANSISTOR

Nanowire Field Effect Transistors

Nanowire Field Effect Transistor Device

Nanowire Field Effect Transistor Device

Nanowire FET and FINFET Hybrid Technology

Hybrid CMOS Technology With Nanowire Devices and Double Gated Plana...