Satoru Nogami

Person

Kanonji-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing reformed sic wafer, epitaxial layer-attach...
- Patent number 11,261,539
- Issue date Mar 1, 2022
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat treatment vessel for single-crystal silicon carbide substrate...
- Patent number 10,665,485
- Issue date May 26, 2020
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment method for SiC substrate
- Patent number 10,665,465
- Issue date May 26, 2020
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Susceptor and method for manufacturing same
- Patent number 10,522,386
- Issue date Dec 31, 2019
- Toyo Tanso Co., Ltd.
- Masato Shinohara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Etching method for SiC substrate and holding container
- Patent number 10,388,536
- Issue date Aug 20, 2019
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seed material for liquid phase epitaxial growth of monocrystalline...
- Patent number 10,358,741
- Issue date Jul 23, 2019
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC substrate treatment method
- Patent number 10,014,176
- Issue date Jul 3, 2018
- Toyo Tanso Co., Ltd.
- Norihito Yabuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for estimating depth of latent scratches in SiC substrates
- Patent number 9,991,175
- Issue date Jun 5, 2018
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for epitaxial growth of monocrystalline silicon carbide usin...
- Patent number 9,725,822
- Issue date Aug 8, 2017
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Storing container, storing container manufacturing method, semicond...
- Patent number 9,704,733
- Issue date Jul 11, 2017
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device manufacturing apparatus
- Patent number 9,644,894
- Issue date May 9, 2017
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Grant
Surface treatment method for single crystal SiC substrate, and sing...
- Patent number 9,570,306
- Issue date Feb 14, 2017
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seed material for liquid phase epitaxial growth of monocrystalline...
- Patent number 9,447,517
- Issue date Sep 20, 2016
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Unit for liquid phase epitaxial growth of monocrystalline silicon c...
- Patent number 9,252,206
- Issue date Feb 2, 2016
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer manufacturing method, and semiconductor wafer
- Patent number 9,029,219
- Issue date May 12, 2015
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
High purity carbonaceous material and ceramic coated high purity ca...
- Patent number 7,517,516
- Issue date Apr 14, 2009
- Toyo Tanso Co., Ltd.
- Ichiro Fujita
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC material, semiconductor device fabricating system and SiC mater...
- Patent number 7,410,923
- Issue date Aug 12, 2008
- Tokyo Electron Limited
- Hayashi Otsuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC material, semiconductor processing equipment and method of prep...
- Patent number 6,936,102
- Issue date Aug 30, 2005
- Tokyo Electron Limited
- Hayashi Otsuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220376109
- Publication date Nov 24, 2022
- Hitachi, Ltd
- Keisuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING DEVICE FABRICATION WAFER
- Publication number 20220002905
- Publication date Jan 6, 2022
- Toyo Tanso Co., Ltd
- Norihito YABUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC WAFER MANUFACTURING METHOD
- Publication number 20210375613
- Publication date Dec 2, 2021
- Toyo Tanso Co., Ltd
- Norihito YABUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC WAFER AND MANUFACTURING METHOD FOR SiC WAFER
- Publication number 20210301421
- Publication date Sep 30, 2021
- Denso Corporation
- Masatake NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUSCEPTOR, METHOD FOR PRODUCING EPITAXIAL SUBSTRATE, AND EPITAXIAL...
- Publication number 20210040643
- Publication date Feb 11, 2021
- Toyo Tanso Co., Ltd
- Takuya SAKAGUCHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
REFORMED SIC WAFER MANUFACTURING METHOD, EPITAXIAL LAYER-ATTACHED S...
- Publication number 20200095703
- Publication date Mar 26, 2020
- TOYO TANSO CO., LTD
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT TREATMENT VESSEL FOR SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE...
- Publication number 20180301359
- Publication date Oct 18, 2018
- TOYO TANSO CO., LTD
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER
- Publication number 20180069084
- Publication date Mar 8, 2018
- Toyo Tanso Co., Ltd
- SATOSHI TORIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT METHOD FOR SiC SUBSTRATE
- Publication number 20170345672
- Publication date Nov 30, 2017
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SUBSTRATE TREATMENT METHOD
- Publication number 20170323792
- Publication date Nov 9, 2017
- TOYO TANSO CO., LTD
- Norihito Yabuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD FOR SIC SUBSTRATE AND HOLDING CONTAINER
- Publication number 20170323797
- Publication date Nov 9, 2017
- TOYO TANSO CO., LTD
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER
- Publication number 20170236905
- Publication date Aug 17, 2017
- Toyo Tanso Co., Ltd
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUSCEPTOR AND METHOD FOR MANUFACTURING SAME
- Publication number 20170162425
- Publication date Jun 8, 2017
- TOYO TANSO CO., LTD.
- Masato Shinohara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEM...
- Publication number 20170121848
- Publication date May 4, 2017
- TOYO TANSO CO., LTD
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SE...
- Publication number 20170114475
- Publication date Apr 27, 2017
- TOYO TANSO CO., LTD
- Norihito Yabuki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ESTIMATING DEPTH OF LATENT SCRATCHES IN SiC SUBSTRATES
- Publication number 20170110378
- Publication date Apr 20, 2017
- TOYO TANSO CO., LTD
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT METHOD FOR SINGLE CRYSTAL SiC SUBSTRATE, AND SING...
- Publication number 20150294867
- Publication date Oct 15, 2015
- TOYO TANSO CO., LTD
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Application
STORING CONTAINER, STORING CONTAINER MANUFACTURING METHOD, SEMICOND...
- Publication number 20150255314
- Publication date Sep 10, 2015
- TOYO TANSO CO., LTD
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS
- Publication number 20150249025
- Publication date Sep 3, 2015
- Toyo Tanso Co., Ltd
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER
- Publication number 20140319539
- Publication date Oct 30, 2014
- TOYO TANSO CO., LTD
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
UNIT FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON C...
- Publication number 20130285060
- Publication date Oct 31, 2013
- TOYO TANSO CO., LTD
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Application
FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBI...
- Publication number 20130269596
- Publication date Oct 17, 2013
- TOYO TANSO CO., LTD
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE...
- Publication number 20130269597
- Publication date Oct 17, 2013
- TOYO TANSO CO., LTD
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE...
- Publication number 20130263774
- Publication date Oct 10, 2013
- TOYO TANSO CO., LTD
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC material, semiconductor device fabricating system and SiC mater...
- Publication number 20060011131
- Publication date Jan 19, 2006
- Hayashi Otsuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
High purity carbonaceous material and ceramic coated high purity ca...
- Publication number 20050079359
- Publication date Apr 14, 2005
- Toyo Tanso Co., Ltd
- Ichiro Fujita
- C30 - CRYSTAL GROWTH

Satoru Nogami

Person

Patents Grantslast 30 patents

Method for manufacturing reformed sic wafer, epitaxial layer-attach...

Heat treatment vessel for single-crystal silicon carbide substrate...

Surface treatment method for SiC substrate

Susceptor and method for manufacturing same

Etching method for SiC substrate and holding container

Seed material for liquid phase epitaxial growth of monocrystalline...

SiC substrate treatment method

Method for estimating depth of latent scratches in SiC substrates

Method for epitaxial growth of monocrystalline silicon carbide usin...

Storing container, storing container manufacturing method, semicond...

Semiconductor device manufacturing apparatus

Surface treatment method for single crystal SiC substrate, and sing...

Seed material for liquid phase epitaxial growth of monocrystalline...

Unit for liquid phase epitaxial growth of monocrystalline silicon c...

Semiconductor wafer manufacturing method, and semiconductor wafer

High purity carbonaceous material and ceramic coated high purity ca...

SiC material, semiconductor device fabricating system and SiC mater...

SiC material, semiconductor processing equipment and method of prep...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD FOR MANUFACTURING DEVICE FABRICATION WAFER

SiC WAFER MANUFACTURING METHOD

SiC WAFER AND MANUFACTURING METHOD FOR SiC WAFER

SUSCEPTOR, METHOD FOR PRODUCING EPITAXIAL SUBSTRATE, AND EPITAXIAL...

REFORMED SIC WAFER MANUFACTURING METHOD, EPITAXIAL LAYER-ATTACHED S...

HEAT TREATMENT VESSEL FOR SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE...

METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER

SURFACE TREATMENT METHOD FOR SiC SUBSTRATE

SiC SUBSTRATE TREATMENT METHOD

ETCHING METHOD FOR SIC SUBSTRATE AND HOLDING CONTAINER

METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER

SUSCEPTOR AND METHOD FOR MANUFACTURING SAME

SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEM...

METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SE...

METHOD FOR ESTIMATING DEPTH OF LATENT SCRATCHES IN SiC SUBSTRATES

SURFACE TREATMENT METHOD FOR SINGLE CRYSTAL SiC SUBSTRATE, AND SING...

STORING CONTAINER, STORING CONTAINER MANUFACTURING METHOD, SEMICOND...

SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS

SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER

UNIT FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON C...

FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBI...

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE...

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE...

SiC material, semiconductor device fabricating system and SiC mater...

High purity carbonaceous material and ceramic coated high purity ca...