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Satoshi INABA
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Seongnam-si, KR
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Patents Grants
last 30 patents
Information
Patent Grant
Resistance change memory
Patent number
10,311,929
Issue date
Jun 4, 2019
TOSHIBA MEMORY CORPORATION
Hisanori Aikawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Magnetoresistive memory device and manufacturing method of the same
Patent number
9,773,838
Issue date
Sep 26, 2017
TOSHIBA MEMORY CORPORATION
Satoshi Inaba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor memory device
Patent number
9,542,988
Issue date
Jan 10, 2017
Kabushiki Kaisha Toshiba
Satoshi Inaba
G11 - INFORMATION STORAGE
Information
Patent Grant
Semiconductor device including buried-gate MOS transistor with appr...
Patent number
9,515,183
Issue date
Dec 6, 2016
Kabushiki Kaisha Toshiba
Satoshi Inaba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device and method of manufacturing the same
Patent number
9,450,059
Issue date
Sep 20, 2016
Kabushiki Kaisha Toshiba
Satoshi Inaba
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
RESISTANCE CHANGE MEMORY
Publication number
20180102156
Publication date
Apr 12, 2018
Toshiba Memory Corporation
Hisanori AIKAWA
G11 - INFORMATION STORAGE
Information
Patent Application
SEMICONDUCTOR DEVICE
Publication number
20160268432
Publication date
Sep 15, 2016
Satoshi INABA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME
Publication number
20160071907
Publication date
Mar 10, 2016
Satoshi INABA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Publication number
20150263067
Publication date
Sep 17, 2015
Satoshi INABA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Publication number
20150069317
Publication date
Mar 12, 2015
Satoshi INABA
H01 - BASIC ELECTRIC ELEMENTS