Satoshi Matsuda

Person

Shiomidai, Isogo-ku, Yokohama-shi, Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of a semiconductor device having polycide wiri...
- Patent number 8,043,912
- Issue date Oct 25, 2011
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including field-effect transistor using salici...
- Patent number 8,017,510
- Issue date Sep 13, 2011
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,564,093
- Issue date Jul 21, 2009
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pattern design method and program of a semiconductor device includi...
- Patent number 7,332,380
- Issue date Feb 19, 2008
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising buried channel region and method fo...
- Patent number 7,288,470
- Issue date Oct 30, 2007
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including field-effect transistor using salici...
- Patent number 7,265,400
- Issue date Sep 4, 2007
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor devices
- Patent number 7,214,595
- Issue date May 8, 2007
- Kabushiki Kaisha Toshiba
- Atsuko Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a silicide film
- Patent number 7,183,168
- Issue date Feb 27, 2007
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a cavity therein and a method of manufact...
- Patent number 7,145,215
- Issue date Dec 5, 2006
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a cavity therein and a method of manufact...
- Patent number 7,009,273
- Issue date Mar 7, 2006
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a silicide film
- Patent number 6,841,429
- Issue date Jan 11, 2005
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having silicide film
- Patent number 6,677,660
- Issue date Jan 13, 2004
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same including...
- Patent number 6,649,462
- Issue date Nov 18, 2003
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising buried channel region
- Patent number 6,642,581
- Issue date Nov 4, 2003
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same including...
- Patent number 6,515,320
- Issue date Feb 4, 2003
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,903,027
- Issue date May 11, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having solid phase diffusion sources
- Patent number 5,898,203
- Issue date Apr 27, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,766,965
- Issue date Jun 16, 1998
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,698,881
- Issue date Dec 16, 1997
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device comprising BiCMOS tran...
- Patent number 5,620,908
- Issue date Apr 15, 1997
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,434,440
- Issue date Jul 18, 1995
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FIELD-EFFECT TRANSISTOR USING SALICI...
- Publication number 20080286931
- Publication date Nov 20, 2008
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having polycide wiring layer, and manufacturin...
- Publication number 20080057642
- Publication date Mar 6, 2008
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of semiconductor device
- Publication number 20070259507
- Publication date Nov 8, 2007
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising buried channel region and method fo...
- Publication number 20070184623
- Publication date Aug 9, 2007
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20070069267
- Publication date Mar 29, 2007
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with a cavity therein and a method of manufact...
- Publication number 20060157789
- Publication date Jul 20, 2006
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device, pattern design method of a semiconductor devi...
- Publication number 20060094190
- Publication date May 4, 2006
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having polycide wiring layer, and manufacturin...
- Publication number 20060076603
- Publication date Apr 13, 2006
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device having a silicide film
- Publication number 20050106801
- Publication date May 19, 2005
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including field-effect transistor using salici...
- Publication number 20050067665
- Publication date Mar 31, 2005
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing semiconductor devices
- Publication number 20040266131
- Publication date Dec 30, 2004
- Atsuko Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with a cavity therein and a method of manufact...
- Publication number 20040129998
- Publication date Jul 8, 2004
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having silicide film and manufacturing method...
- Publication number 20040102012
- Publication date May 27, 2004
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising buried channel region and method fo...
- Publication number 20040084731
- Publication date May 6, 2004
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20030073273
- Publication date Apr 17, 2003
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20030022448
- Publication date Jan 30, 2003
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising buried channel region and method fo...
- Publication number 20020142529
- Publication date Oct 3, 2002
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS

Satoshi Matsuda

Person

Patents Grantslast 30 patents

Manufacturing method of a semiconductor device having polycide wiri...

Semiconductor device including field-effect transistor using salici...

Semiconductor device

Pattern design method and program of a semiconductor device includi...

Semiconductor device comprising buried channel region and method fo...

Semiconductor device including field-effect transistor using salici...

Method of producing semiconductor devices

Method of manufacturing a semiconductor device having a silicide film

Semiconductor device with a cavity therein and a method of manufact...

Semiconductor device with a cavity therein and a method of manufact...

Method of manufacturing a semiconductor device having a silicide film

Semiconductor device having silicide film

Semiconductor device and method of manufacturing the same including...

Semiconductor device comprising buried channel region

Semiconductor device and method of manufacturing the same including...

MOSFET with solid phase diffusion source

Semiconductor device having solid phase diffusion sources

Semiconductor device and method of manufacturing the same

MOSFET with solid phase diffusion source

Manufacturing method of semiconductor device comprising BiCMOS tran...

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING FIELD-EFFECT TRANSISTOR USING SALICI...

Semiconductor device having polycide wiring layer, and manufacturin...

Manufacturing method of semiconductor device

Semiconductor device comprising buried channel region and method fo...

Semiconductor device and manufacturing method thereof

Semiconductor device with a cavity therein and a method of manufact...

Semiconductor device, pattern design method of a semiconductor devi...

Semiconductor device having polycide wiring layer, and manufacturin...

Method of manufacturing a semiconductor device having a silicide film

Semiconductor device including field-effect transistor using salici...

Method of producing semiconductor devices

Semiconductor device with a cavity therein and a method of manufact...

Semiconductor device having silicide film and manufacturing method...

Semiconductor device comprising buried channel region and method fo...

Semiconductor device and method of manufacturing the same

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor device comprising buried channel region and method fo...