Satoshi Yanagisawa

Person

Kawasaki-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device including a terminal structure
- Patent number 7,564,107
- Issue date Jul 21, 2009
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with semiconductor chip mounted in package
- Patent number 7,554,210
- Issue date Jun 30, 2009
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,301,202
- Issue date Nov 27, 2007
- Kabushiki Kaisha Toshiba
- Shigeo Kouzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its manufacturing method
- Patent number 7,259,426
- Issue date Aug 21, 2007
- Kabushiki Kaisha Toshiba
- Satoshi Aida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,253,507
- Issue date Aug 7, 2007
- Kabushiki Kaisha Toshiba
- Shigeo Kouzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate type semiconductor device having a diffusion region...
- Patent number 7,049,186
- Issue date May 23, 2006
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate type semiconductor device having a diffusion region...
- Patent number 6,870,200
- Issue date Mar 22, 2005
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pressure-contact type semiconductor device
- Patent number 6,605,870
- Issue date Aug 12, 2003
- Kabushiki Kaisha Toshiba
- Eitaro Miyake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pressure-contact type semiconductor device
- Patent number 5,874,750
- Issue date Feb 23, 1999
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting gate-turnoff thyristor
- Patent number 5,835,985
- Issue date Nov 10, 1998
- Kabushiki Kaisha Toshiba
- Michiaki Hiyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS composite type semiconductor device
- Patent number 5,539,232
- Issue date Jul 23, 1996
- Kabushiki Kaisha Toshiba
- Hidetoshi Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20110233607
- Publication date Sep 29, 2011
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with semiconductor chip mounted in package
- Publication number 20060186516
- Publication date Aug 24, 2006
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060138536
- Publication date Jun 29, 2006
- Kabushiki Kaisha Toshiba
- Shigeo Kouzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20060097313
- Publication date May 11, 2006
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060017096
- Publication date Jan 26, 2006
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and its manufacturing method
- Publication number 20050250322
- Publication date Nov 10, 2005
- Kabushiki Kaisha Toshiba
- Satoshi Aida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050194638
- Publication date Sep 8, 2005
- Kabushiki Kaisha Toshiba
- Shigeo Kouzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate type semiconductor device having a diffusion region...
- Publication number 20050032280
- Publication date Feb 10, 2005
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate type semiconductor device and method of manufacturin...
- Publication number 20040178441
- Publication date Sep 16, 2004
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with semiconductor chip mounted in package
- Publication number 20040080028
- Publication date Apr 29, 2004
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pressure-contact type semiconductor device
- Publication number 20010011757
- Publication date Aug 9, 2001
- Kabushiki Kaisha Toshiba
- Eitaro Miyake
- H01 - BASIC ELECTRIC ELEMENTS

Satoshi Yanagisawa

Person

Patents Grantslast 30 patents

Power semiconductor device including a terminal structure

Semiconductor device with semiconductor chip mounted in package

Semiconductor device and method of manufacturing the same

Semiconductor device and its manufacturing method

Semiconductor device

Insulated gate type semiconductor device having a diffusion region...

Insulated gate type semiconductor device having a diffusion region...

Pressure-contact type semiconductor device

Pressure-contact type semiconductor device

Reverse conducting gate-turnoff thyristor

MOS composite type semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Semiconductor device with semiconductor chip mounted in package

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing same

Semiconductor device

Semiconductor device and its manufacturing method

Semiconductor device

Insulated gate type semiconductor device having a diffusion region...

Insulated gate type semiconductor device and method of manufacturin...

Semiconductor device with semiconductor chip mounted in package

Pressure-contact type semiconductor device