Saurabh Desai

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory cell having a heating element and a substrate-b...
- Patent number 8,669,157
- Issue date Mar 11, 2014
- National Semiconductor Corporation
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of enhancing charge storage in an E2PROM cell
- Patent number 8,247,862
- Issue date Aug 21, 2012
- National Semiconductor Corporation
- Jeff A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky junction-field-effect-transistor (JFET) structures and met...
- Patent number 8,207,559
- Issue date Jun 26, 2012
- Texas Instruments Incorporated
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell having a heating element and a substrate-b...
- Patent number 8,183,621
- Issue date May 22, 2012
- Texas Instruments Incorporated
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell with heating element
- Patent number 7,919,807
- Issue date Apr 5, 2011
- National Semiconductor Corporation
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell with two capacitors and one PNP transistor...
- Patent number 7,919,805
- Issue date Apr 5, 2011
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Grant
Heating element for enhanced E2PROM
- Patent number 7,719,048
- Issue date May 18, 2010
- National Semiconductor Corporation
- Jeff A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell with poly filled trench as control gate an...
- Patent number 7,663,173
- Issue date Feb 16, 2010
- National Semiconductor Corporation
- Saurabh Desai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM structure with improved data retention utilizing biased meta...
- Patent number 7,425,741
- Issue date Sep 16, 2008
- National Semiconductor Corporation
- Andrew Strachan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complimentary bipolar/CMOS fabrication method
- Patent number 5,262,345
- Issue date Nov 16, 1993
- Analog Devices, Inc.
- Mohammad S. Nasser
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY CELL HAVING A HEATING ELEMENT AND A SUBSTRATE-B...
- Publication number 20120230118
- Publication date Sep 13, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Memory Cell Having a Heating Element and a Substrate-B...
- Publication number 20110147820
- Publication date Jun 23, 2011
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ENHANCING CHARGE STORAGE IN AN E2PROM CELL
- Publication number 20100157682
- Publication date Jun 24, 2010
- National Semiconductor Corporation
- Jeff A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY JUNCTION-FIELD-EFFECT-TRANSISTOR (JFET) STRUCTURES AND MET...
- Publication number 20100032731
- Publication date Feb 11, 2010
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS

Saurabh Desai

Person

Patents Grantslast 30 patents

Non-volatile memory cell having a heating element and a substrate-b...

Method of enhancing charge storage in an E2PROM cell

Schottky junction-field-effect-transistor (JFET) structures and met...

Non-volatile memory cell having a heating element and a substrate-b...

Non-volatile memory cell with heating element

Non-volatile memory cell with two capacitors and one PNP transistor...

Heating element for enhanced E2PROM

Non-volatile memory cell with poly filled trench as control gate an...

EEPROM structure with improved data retention utilizing biased meta...

Complimentary bipolar/CMOS fabrication method

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY CELL HAVING A HEATING ELEMENT AND A SUBSTRATE-B...

Non-Volatile Memory Cell Having a Heating Element and a Substrate-B...

METHOD OF ENHANCING CHARGE STORAGE IN AN E2PROM CELL

SCHOTTKY JUNCTION-FIELD-EFFECT-TRANSISTOR (JFET) STRUCTURES AND MET...