Scott B. CLENDENNING

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Halogen treatment for NMOS contact resistance improvement
- Patent number 11,923,290
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor architectures in semiconductor devices
- Patent number 11,901,404
- Issue date Feb 13, 2024
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures without fin end gap
- Patent number 11,869,889
- Issue date Jan 9, 2024
- Intel Corporation
- Szuya S. Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor architectures in semiconductor devices
- Patent number 11,791,375
- Issue date Oct 17, 2023
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stacks for FinFET transistors
- Patent number 11,695,051
- Issue date Jul 4, 2023
- Intel Corporation
- Ashish Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked memory elements with air gap
- Patent number 11,672,133
- Issue date Jun 6, 2023
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnect with air gap
- Patent number 11,594,485
- Issue date Feb 28, 2023
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective gate spacers for semiconductor devices
- Patent number 11,532,724
- Issue date Dec 20, 2022
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for germanium substrate
- Patent number 11,270,887
- Issue date Mar 8, 2022
- Intel Corporation
- Patricio E. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor architectures in semiconductor devices
- Patent number 11,264,449
- Issue date Mar 1, 2022
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal aluminum gallium indium carbide thin films as liners and barr...
- Patent number 11,227,798
- Issue date Jan 18, 2022
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etching and controlled atomic layer etching of transition...
- Patent number 11,217,456
- Issue date Jan 4, 2022
- Intel Corporation
- James M. Blackwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of multi-channel nanowire devices with self-aligned int...
- Patent number 10,998,423
- Issue date May 4, 2021
- Intel Corporation
- Van H. Le
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Selective gate spacers for semiconductor devices
- Patent number 10,971,600
- Issue date Apr 6, 2021
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for doping a sub-fin region of a semiconductor fin structur...
- Patent number 10,896,852
- Issue date Jan 19, 2021
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differentiated molecular domains for selective hardmask fabrication...
- Patent number 10,886,175
- Issue date Jan 5, 2021
- Intel Corporation
- Eungnak Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of increasing an energy density and an achievable power outp...
- Patent number 10,777,366
- Issue date Sep 15, 2020
- Intel Corporation
- Donald S. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition utilizing sacrificial blocking layers for semi...
- Patent number 10,756,215
- Issue date Aug 25, 2020
- Intel Corporation
- Grant Kloster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of multi-channel nanowire devices with self-aligned int...
- Patent number 10,720,508
- Issue date Jul 21, 2020
- Intel Corporation
- Van H. Le
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices having ruthenium phosphorus thin films
- Patent number 10,658,487
- Issue date May 19, 2020
- Intel Corporation
- Scott B. Clendenning
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Microelectronic conductive routes and methods of making the same
- Patent number 10,497,613
- Issue date Dec 3, 2019
- Intel Corporation
- Jasmeet S. Chawla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective gate spacers for semiconductor devices
- Patent number 10,396,176
- Issue date Aug 27, 2019
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition utilizing sacrificial blocking layers for semi...
- Patent number 10,243,080
- Issue date Mar 26, 2019
- Intel Corporation
- Grant Kloster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precursor and process design for photo-assisted metal atomic layer...
- Patent number 9,932,671
- Issue date Apr 3, 2018
- Intel Corporation
- James M. Blackwell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nanostructured electrolytic energy storage devices
- Patent number 9,928,966
- Issue date Mar 27, 2018
- Intel Corporation
- Zhaohui Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-planar III-V field effect transistors with conformal metal gate...
- Patent number 9,818,847
- Issue date Nov 14, 2017
- Intel Corporation
- Gilbert Dewey
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Energy storage device, method of manufacturing same, and mobile ele...
- Patent number 9,793,061
- Issue date Oct 17, 2017
- Intel Corporation
- Donald S. Gardner
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Process and material for preventing deleterious expansion of high a...
- Patent number 9,786,559
- Issue date Oct 10, 2017
- Intel Corporation
- Paul A. Zimmerman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective area deposition of metal films by atomic layer deposition...
- Patent number 9,583,389
- Issue date Feb 28, 2017
- Intel Corporation
- Patricio E. Romero
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Forming layers of materials over small regions by selective chemica...
- Patent number 9,530,733
- Issue date Dec 27, 2016
- Intel Corporation
- Robert L. Bristol
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TIN CARBOXYLATE PRECURSORS FOR METAL OXIDE RESIST LAYERS AND RELATE...
- Publication number 20240272547
- Publication date Aug 15, 2024
- Intel Corporation
- Charles Cameron Mokhtarzadeh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC
- Publication number 20240222475
- Publication date Jul 4, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOT...
- Publication number 20240210821
- Publication date Jun 27, 2024
- Intel Corporation
- Charles Cameron Mokhtarzadeh
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST
- Publication number 20240201586
- Publication date Jun 20, 2024
- Intel Corporation
- James Blackwell
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS
- Publication number 20240120415
- Publication date Apr 11, 2024
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP
- Publication number 20240088143
- Publication date Mar 14, 2024
- Intel Corporation
- Szuya S. LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...
- Publication number 20240006481
- Publication date Jan 4, 2024
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...
- Publication number 20230420510
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D LAYERED GATE OXIDE
- Publication number 20230420514
- Publication date Dec 28, 2023
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...
- Publication number 20230420364
- Publication date Dec 28, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...
- Publication number 20230420511
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411278
- Publication date Dec 21, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL PMOS DEVICES FOR PROVIDING CMOS IN BACK-END LAYERS...
- Publication number 20230411390
- Publication date Dec 21, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411443
- Publication date Dec 21, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED 2D SEMICONDUCTORS
- Publication number 20230317783
- Publication date Oct 5, 2023
- Intel Corporation
- Kirby MAXEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH HIGH-K PEROVSKITE GATE DIELECTRICS
- Publication number 20230253476
- Publication date Aug 10, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS
- Publication number 20230253444
- Publication date Aug 10, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH PEROVSKITE FILMS
- Publication number 20230200081
- Publication date Jun 22, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MID-VALENT MOLYBDENUM COMPLEXES FOR THIN FILM DEPOSITION
- Publication number 20230192735
- Publication date Jun 22, 2023
- Intel Corporation
- Charles Cameron Mokhtarzadeh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Scott B. CLENDENNING

Person

Patents Grantslast 30 patents

Halogen treatment for NMOS contact resistance improvement

Capacitor architectures in semiconductor devices

Self-aligned gate endcap (SAGE) architectures without fin end gap

Capacitor architectures in semiconductor devices

Gate stacks for FinFET transistors

Vertically stacked memory elements with air gap

Local interconnect with air gap

Selective gate spacers for semiconductor devices

Passivation layer for germanium substrate

Capacitor architectures in semiconductor devices

Metal aluminum gallium indium carbide thin films as liners and barr...

Selective etching and controlled atomic layer etching of transition...

Fabrication of multi-channel nanowire devices with self-aligned int...

Selective gate spacers for semiconductor devices

Methods for doping a sub-fin region of a semiconductor fin structur...

Differentiated molecular domains for selective hardmask fabrication...

Method of increasing an energy density and an achievable power outp...

Selective deposition utilizing sacrificial blocking layers for semi...

Fabrication of multi-channel nanowire devices with self-aligned int...

Semiconductor devices having ruthenium phosphorus thin films

Microelectronic conductive routes and methods of making the same

Selective gate spacers for semiconductor devices

Selective deposition utilizing sacrificial blocking layers for semi...

Precursor and process design for photo-assisted metal atomic layer...

Nanostructured electrolytic energy storage devices

Non-planar III-V field effect transistors with conformal metal gate...

Energy storage device, method of manufacturing same, and mobile ele...

Process and material for preventing deleterious expansion of high a...

Selective area deposition of metal films by atomic layer deposition...

Forming layers of materials over small regions by selective chemica...

Patents Applicationslast 30 patents

TIN CARBOXYLATE PRECURSORS FOR METAL OXIDE RESIST LAYERS AND RELATE...

TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOT...

PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST

TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP

ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...

SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...

2D LAYERED GATE OXIDE

MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...

STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

TWO-DIMENSIONAL PMOS DEVICES FOR PROVIDING CMOS IN BACK-END LAYERS...

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

LAYERED 2D SEMICONDUCTORS

TRANSISTOR DEVICES WITH HIGH-K PEROVSKITE GATE DIELECTRICS

CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS

TRANSISTOR DEVICES WITH PEROVSKITE FILMS

MID-VALENT MOLYBDENUM COMPLEXES FOR THIN FILM DEPOSITION