Scott B. CLENDENNING

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structures with graphene contacts
- Patent number 12,369,382
- Issue date Jul 22, 2025
- Intel Corporation
- Carl H. Naylor
Information Patent Grant
Capacitor architectures in semiconductor devices
- Patent number 12,342,551
- Issue date Jun 24, 2025
- Intel Corporation
- Sudipto Naskar
Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halogen treatment for NMOS contact resistance improvement
- Patent number 11,923,290
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor architectures in semiconductor devices
- Patent number 11,901,404
- Issue date Feb 13, 2024
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures without fin end gap
- Patent number 11,869,889
- Issue date Jan 9, 2024
- Intel Corporation
- Szuya S. Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor architectures in semiconductor devices
- Patent number 11,791,375
- Issue date Oct 17, 2023
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stacks for FinFET transistors
- Patent number 11,695,051
- Issue date Jul 4, 2023
- Intel Corporation
- Ashish Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked memory elements with air gap
- Patent number 11,672,133
- Issue date Jun 6, 2023
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnect with air gap
- Patent number 11,594,485
- Issue date Feb 28, 2023
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective gate spacers for semiconductor devices
- Patent number 11,532,724
- Issue date Dec 20, 2022
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for germanium substrate
- Patent number 11,270,887
- Issue date Mar 8, 2022
- Intel Corporation
- Patricio E. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor architectures in semiconductor devices
- Patent number 11,264,449
- Issue date Mar 1, 2022
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal aluminum gallium indium carbide thin films as liners and barr...
- Patent number 11,227,798
- Issue date Jan 18, 2022
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etching and controlled atomic layer etching of transition...
- Patent number 11,217,456
- Issue date Jan 4, 2022
- Intel Corporation
- James M. Blackwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of multi-channel nanowire devices with self-aligned int...
- Patent number 10,998,423
- Issue date May 4, 2021
- Intel Corporation
- Van H. Le
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Selective gate spacers for semiconductor devices
- Patent number 10,971,600
- Issue date Apr 6, 2021
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for doping a sub-fin region of a semiconductor fin structur...
- Patent number 10,896,852
- Issue date Jan 19, 2021
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differentiated molecular domains for selective hardmask fabrication...
- Patent number 10,886,175
- Issue date Jan 5, 2021
- Intel Corporation
- Eungnak Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of increasing an energy density and an achievable power outp...
- Patent number 10,777,366
- Issue date Sep 15, 2020
- Intel Corporation
- Donald S. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition utilizing sacrificial blocking layers for semi...
- Patent number 10,756,215
- Issue date Aug 25, 2020
- Intel Corporation
- Grant Kloster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of multi-channel nanowire devices with self-aligned int...
- Patent number 10,720,508
- Issue date Jul 21, 2020
- Intel Corporation
- Van H. Le
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices having ruthenium phosphorus thin films
- Patent number 10,658,487
- Issue date May 19, 2020
- Intel Corporation
- Scott B. Clendenning
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Microelectronic conductive routes and methods of making the same
- Patent number 10,497,613
- Issue date Dec 3, 2019
- Intel Corporation
- Jasmeet S. Chawla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective gate spacers for semiconductor devices
- Patent number 10,396,176
- Issue date Aug 27, 2019
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition utilizing sacrificial blocking layers for semi...
- Patent number 10,243,080
- Issue date Mar 26, 2019
- Intel Corporation
- Grant Kloster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precursor and process design for photo-assisted metal atomic layer...
- Patent number 9,932,671
- Issue date Apr 3, 2018
- Intel Corporation
- James M. Blackwell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nanostructured electrolytic energy storage devices
- Patent number 9,928,966
- Issue date Mar 27, 2018
- Intel Corporation
- Zhaohui Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-planar III-V field effect transistors with conformal metal gate...
- Patent number 9,818,847
- Issue date Nov 14, 2017
- Intel Corporation
- Gilbert Dewey
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Energy storage device, method of manufacturing same, and mobile ele...
- Patent number 9,793,061
- Issue date Oct 17, 2017
- Intel Corporation
- Donald S. Gardner
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETOELECTRIC SPIN–ORBIT (MESO) DEVICE WITH ANTIFERROMAGNETIC SPI...
- Publication number 20250221318
- Publication date Jul 3, 2025
- Intel Corporation
- Mahendra DC
Information Patent Application
METHODS AND APPARATUS UTILIZING INDIUM-BASED PRECURSORS FOR INTEGRA...
- Publication number 20250157808
- Publication date May 15, 2025
- Intel Corporation
- Charles Mokhtarzadeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...
- Publication number 20250133822
- Publication date Apr 24, 2025
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR ARCHITECTURES IN SEMICONDUCTOR DEVICES
- Publication number 20250120100
- Publication date Apr 10, 2025
- Intel Corporation
- Sudipto NASKAR
Information Patent Application
CONFORMAL COATINGS WITH SPATIALLY DEFINED SURFACE ENERGIES FOR DIE-...
- Publication number 20250112155
- Publication date Apr 3, 2025
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...
- Publication number 20250113572
- Publication date Apr 3, 2025
- Intel Corporation
- Mahmut Sami Kavrik
Information Patent Application
METAL OXIDE RESIST LAYERS INCLUDING BISMUTH AND PHOSPHORUS AND RELA...
- Publication number 20250054759
- Publication date Feb 13, 2025
- Intel Corporation
- Charles Cameron Mokhtarzadeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
- Publication number 20250008852
- Publication date Jan 2, 2025
- Intel Corporation
- Punyashloka Debashis
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...
- Publication number 20240429301
- Publication date Dec 26, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TIN CARBOXYLATE PRECURSORS FOR METAL OXIDE RESIST LAYERS AND RELATE...
- Publication number 20240272547
- Publication date Aug 15, 2024
- Intel Corporation
- Charles Cameron Mokhtarzadeh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC
- Publication number 20240222475
- Publication date Jul 4, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOT...
- Publication number 20240210821
- Publication date Jun 27, 2024
- Intel Corporation
- Charles Cameron Mokhtarzadeh
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST
- Publication number 20240201586
- Publication date Jun 20, 2024
- Intel Corporation
- James Blackwell
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS
- Publication number 20240120415
- Publication date Apr 11, 2024
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP
- Publication number 20240088143
- Publication date Mar 14, 2024
- Intel Corporation
- Szuya S. LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...
- Publication number 20240006481
- Publication date Jan 4, 2024
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS

Scott B. CLENDENNING

Person

Patents Grantslast 30 patents

Integrated circuit structures with graphene contacts

Capacitor architectures in semiconductor devices

Ribbon or wire transistor stack with selective dipole threshold vol...

Halogen treatment for NMOS contact resistance improvement

Capacitor architectures in semiconductor devices

Self-aligned gate endcap (SAGE) architectures without fin end gap

Capacitor architectures in semiconductor devices

Gate stacks for FinFET transistors

Vertically stacked memory elements with air gap

Local interconnect with air gap

Selective gate spacers for semiconductor devices

Passivation layer for germanium substrate

Capacitor architectures in semiconductor devices

Metal aluminum gallium indium carbide thin films as liners and barr...

Selective etching and controlled atomic layer etching of transition...

Fabrication of multi-channel nanowire devices with self-aligned int...

Selective gate spacers for semiconductor devices

Methods for doping a sub-fin region of a semiconductor fin structur...

Differentiated molecular domains for selective hardmask fabrication...

Method of increasing an energy density and an achievable power outp...

Selective deposition utilizing sacrificial blocking layers for semi...

Fabrication of multi-channel nanowire devices with self-aligned int...

Semiconductor devices having ruthenium phosphorus thin films

Microelectronic conductive routes and methods of making the same

Selective gate spacers for semiconductor devices

Selective deposition utilizing sacrificial blocking layers for semi...

Precursor and process design for photo-assisted metal atomic layer...

Nanostructured electrolytic energy storage devices

Non-planar III-V field effect transistors with conformal metal gate...

Energy storage device, method of manufacturing same, and mobile ele...

Patents Applicationslast 30 patents

MAGNETOELECTRIC SPIN–ORBIT (MESO) DEVICE WITH ANTIFERROMAGNETIC SPI...

METHODS AND APPARATUS UTILIZING INDIUM-BASED PRECURSORS FOR INTEGRA...

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

CAPACITOR ARCHITECTURES IN SEMICONDUCTOR DEVICES

CONFORMAL COATINGS WITH SPATIALLY DEFINED SURFACE ENERGIES FOR DIE-...

METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...

METAL OXIDE RESIST LAYERS INCLUDING BISMUTH AND PHOSPHORUS AND RELA...

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...

PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...

TIN CARBOXYLATE PRECURSORS FOR METAL OXIDE RESIST LAYERS AND RELATE...

TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOT...

PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST

TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP

ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...