Scott Beasor

Person

Rhinebeck, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET with etch-selective spacer and self-aligned contact capping...
- Patent number 10,879,180
- Issue date Dec 29, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structures for a transistor device
- Patent number 10,872,979
- Issue date Dec 22, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin reveal forming STI regions having convex shape between fins
- Patent number 10,832,965
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Yiheng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for a gate cut
- Patent number 10,832,966
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal resistors with a non-planar configuration
- Patent number 10,832,839
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Scott Beasor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal resistor structure in at least one cavity in dielectric over...
- Patent number 10,833,067
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having upper spacers adjacent gate and source/drain contacts
- Patent number 10,818,659
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure to reduce soft-fail incidence and meth...
- Patent number 10,818,557
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of manufacturing
- Patent number 10,804,379
- Issue date Oct 13, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with dielectric bar containing gate to reduce effe...
- Patent number 10,797,049
- Issue date Oct 6, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with a gate structure comprising a tapered upper surface
- Patent number 10,763,176
- Issue date Sep 1, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned sacrificial epitaxial capping for trench silicide
- Patent number 10,741,556
- Issue date Aug 11, 2020
- GLOBALFOUNDRIES Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric overlay mark for overlay measurement
- Patent number 10,707,175
- Issue date Jul 7, 2020
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chamfered replacement gate structures
- Patent number 10,636,890
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact and cross-coupling contact formation
- Patent number 10,629,694
- Issue date Apr 21, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming spacers adjacent gate structures of a transistor...
- Patent number 10,629,739
- Issue date Apr 21, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation pillar first gate structures and methods of forming same
- Patent number 10,600,914
- Issue date Mar 24, 2020
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid fin cut with improved fin profiles
- Patent number 10,586,736
- Issue date Mar 10, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making a self-aligned gate contact structure and source/...
- Patent number 10,580,701
- Issue date Mar 3, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different upper and lower spacers for contact
- Patent number 10,522,644
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled memory structures or other logic devices with middle of the...
- Patent number 10,475,890
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with fins formed by a damascene-like process
- Patent number 10,403,742
- Issue date Sep 3, 2019
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming source/drain contact structures on integrated ci...
- Patent number 10,373,877
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide formation through hybrid methods of thermal and depositi...
- Patent number 10,361,289
- Issue date Jul 23, 2019
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate contact and cross-coupling contact formation
- Patent number 10,326,002
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing selective nanostructures into finFET proces...
- Patent number 10,049,944
- Issue date Aug 14, 2018
- GLOBALFOUNDRIES Inc.
- Scott Beasor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for capping cobalt contacts
- Patent number 10,043,708
- Issue date Aug 7, 2018
- GLOBALFOUNDRIES Inc.
- Viraj Sardesai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon liner for STI CMP stop in FinFET
- Patent number 9,984,933
- Issue date May 29, 2018
- GLOBALFOUNDRIES Inc.
- Yiheng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned sacrificial epitaxial capping for trench silicide
- Patent number 9,812,453
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain profile engineering for enhanced p-MOSFET
- Patent number 9,419,082
- Issue date Aug 16, 2016
- GLOBALFOUNDRIES Inc.
- Shiv Kumar Mishra
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURES WITH A PROTECTIVE LINER AND METHODS OF FOR...
- Publication number 20200303247
- Publication date Sep 24, 2020
- GLOBALFOUNDRIES INC.
- JIEHUI SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SPACER STRUCTURES FOR A TRANSISTOR DEVICE
- Publication number 20200168731
- Publication date May 28, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE WITH DIELECTRIC BAR CONTAINING GATE TO REDUCE EFFE...
- Publication number 20200135723
- Publication date Apr 30, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A GATE STRUCTURE COMPRISING A TAPERED UPPER SURFACE
- Publication number 20200126863
- Publication date Apr 23, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET HAVING UPPER SPACERS ADJACENT GATE AND SOURCE/DRAIN CONTACTS
- Publication number 20200119000
- Publication date Apr 16, 2020
- GLOBALFOUNDRIES INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SPACERS ADJACENT GATE STRUCTURES OF A TRANSISTOR...
- Publication number 20200027979
- Publication date Jan 23, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE TO REDUCE SOFT-FAIL INCIDENCE AND METH...
- Publication number 20200013678
- Publication date Jan 9, 2020
- GLOBALFOUNDRIES INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT UPPER AND LOWER SPACERS FOR CONTACT
- Publication number 20190393321
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID FIN CUT WITH IMPROVED FIN PROFILES
- Publication number 20190378763
- Publication date Dec 12, 2019
- GLOBALFOUNDRIES INC.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC OVERLAY MARK FOR OVERLAY MEASUREMENT
- Publication number 20190363053
- Publication date Nov 28, 2019
- GLOBALFOUNDRIES INC.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF MANUFACTURING
- Publication number 20190355838
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMFERED REPLACEMENT GATE STRUCTURES
- Publication number 20190348517
- Publication date Nov 14, 2019
- GLOBALFOUNDRIES INC.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS
- Publication number 20190273148
- Publication date Sep 5, 2019
- GLOBALFOUNDRIES INC.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR A GATE CUT
- Publication number 20190259668
- Publication date Aug 22, 2019
- GLOBALFOUNDRIES INC.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION PILLAR FIRST GATE STRUCTURES AND METHODS OF FORMING SAME
- Publication number 20190221661
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES INC.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE WORK FUNCTION ENABLEMENT FOR SILICON NANOWIRE DEVICE
- Publication number 20190221483
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES INC.
- George MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN REVEAL FORMING STI REGIONS HAVING CONVEX SHAPE BETWEEN FINS
- Publication number 20190214308
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Yiheng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH ETCH-SELECTIVE SPACER AND SELF-ALIGNED CONTACT CAPPING...
- Publication number 20190164898
- Publication date May 30, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED MEMORY STRUCTURES OR OTHER LOGIC DEVICES WITH MIDDLE OF THE...
- Publication number 20190109197
- Publication date Apr 11, 2019
- GLOBALFOUNDRIES INC.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS
- Publication number 20190097019
- Publication date Mar 28, 2019
- GLOBALFOUNDRIES INC.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR CAPPING COBALT CONTACTS
- Publication number 20180277427
- Publication date Sep 27, 2018
- GLOBALFOUNDRIES INC.
- Viraj SARDESAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SACRIFICIAL EPITAXIAL CAPPING FOR TRENCH SILICIDE
- Publication number 20180233505
- Publication date Aug 16, 2018
- GLOBALFOUNDRIES INC.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR CAPPING COBALT CONTACTS
- Publication number 20180130703
- Publication date May 10, 2018
- Viraj SARDESAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SELECTIVE NANOSTRUCTURES INTO FINFET PROCES...
- Publication number 20180096899
- Publication date Apr 5, 2018
- GLOBALFOUNDRIES INC.
- Scott BEASOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING VERTICAL AND BOTTOM BIAS E-FUSES AND RELATED DEVICES
- Publication number 20170338180
- Publication date Nov 23, 2017
- GLOBALFOUNDRIES INC.
- Scott BEASOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITOR ARCHITECTURE
- Publication number 20160254345
- Publication date Sep 1, 2016
- GLOBALFOUNDRIES INC.
- Jagar SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROFILE ENGINEERING FOR ENHANCED P-MOSFET
- Publication number 20150311293
- Publication date Oct 29, 2015
- GLOBALFOUNDRIES INC.
- Shiv Kumar MISHRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING CONTACTS FOR METAL RESISTORS AND METH...
- Publication number 20150255335
- Publication date Sep 10, 2015
- GLOBALFOUNDRIES, Inc.
- Scott Beasor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING FINFET INTEGRATED CIRCUITS WITH SIMULTANEOU...
- Publication number 20150214113
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES, Inc.
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REUSING ACTIVE AREA MASK FOR TRENCH TRANSFER EXPOSURE
- Publication number 20140342556
- Publication date Nov 20, 2014
- GLOBALFOUNDRIES INC.
- Mohamed Salama
- H01 - BASIC ELECTRIC ELEMENTS

Scott Beasor

Person

Patents Grantslast 30 patents

FinFET with etch-selective spacer and self-aligned contact capping...

Spacer structures for a transistor device

Fin reveal forming STI regions having convex shape between fins

Methods and structures for a gate cut

Metal resistors with a non-planar configuration

Metal resistor structure in at least one cavity in dielectric over...

FinFET having upper spacers adjacent gate and source/drain contacts

Integrated circuit structure to reduce soft-fail incidence and meth...

FinFET device and method of manufacturing

FinFET structure with dielectric bar containing gate to reduce effe...

Transistor with a gate structure comprising a tapered upper surface

Self-aligned sacrificial epitaxial capping for trench silicide

Asymmetric overlay mark for overlay measurement

Chamfered replacement gate structures

Gate contact and cross-coupling contact formation

Methods of forming spacers adjacent gate structures of a transistor...

Isolation pillar first gate structures and methods of forming same

Hybrid fin cut with improved fin profiles

Methods of making a self-aligned gate contact structure and source/...

Different upper and lower spacers for contact

Scaled memory structures or other logic devices with middle of the...

Field-effect transistors with fins formed by a damascene-like process

Methods of forming source/drain contact structures on integrated ci...

Gate oxide formation through hybrid methods of thermal and depositi...

Self-aligned gate contact and cross-coupling contact formation

Method of manufacturing selective nanostructures into finFET proces...

Structure and method for capping cobalt contacts

Silicon liner for STI CMP stop in FinFET

Self-aligned sacrificial epitaxial capping for trench silicide

Source/drain profile engineering for enhanced p-MOSFET

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURES WITH A PROTECTIVE LINER AND METHODS OF FOR...

NOVEL SPACER STRUCTURES FOR A TRANSISTOR DEVICE

FINFET STRUCTURE WITH DIELECTRIC BAR CONTAINING GATE TO REDUCE EFFE...

TRANSISTOR WITH A GATE STRUCTURE COMPRISING A TAPERED UPPER SURFACE

FINFET HAVING UPPER SPACERS ADJACENT GATE AND SOURCE/DRAIN CONTACTS

METHODS OF FORMING SPACERS ADJACENT GATE STRUCTURES OF A TRANSISTOR...

INTEGRATED CIRCUIT STRUCTURE TO REDUCE SOFT-FAIL INCIDENCE AND METH...

DIFFERENT UPPER AND LOWER SPACERS FOR CONTACT

HYBRID FIN CUT WITH IMPROVED FIN PROFILES

ASYMMETRIC OVERLAY MARK FOR OVERLAY MEASUREMENT

FINFET DEVICE AND METHOD OF MANUFACTURING

CHAMFERED REPLACEMENT GATE STRUCTURES

FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS

METHODS AND STRUCTURES FOR A GATE CUT

ISOLATION PILLAR FIRST GATE STRUCTURES AND METHODS OF FORMING SAME

SINGLE WORK FUNCTION ENABLEMENT FOR SILICON NANOWIRE DEVICE

FIN REVEAL FORMING STI REGIONS HAVING CONVEX SHAPE BETWEEN FINS

FINFET WITH ETCH-SELECTIVE SPACER AND SELF-ALIGNED CONTACT CAPPING...

SCALED MEMORY STRUCTURES OR OTHER LOGIC DEVICES WITH MIDDLE OF THE...

FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS

STRUCTURE AND METHOD FOR CAPPING COBALT CONTACTS

SELF-ALIGNED SACRIFICIAL EPITAXIAL CAPPING FOR TRENCH SILICIDE

STRUCTURE AND METHOD FOR CAPPING COBALT CONTACTS

METHOD OF MANUFACTURING SELECTIVE NANOSTRUCTURES INTO FINFET PROCES...

METHOD OF MAKING VERTICAL AND BOTTOM BIAS E-FUSES AND RELATED DEVICES

METAL-INSULATOR-METAL CAPACITOR ARCHITECTURE

SOURCE/DRAIN PROFILE ENGINEERING FOR ENHANCED P-MOSFET

INTEGRATED CIRCUITS INCLUDING CONTACTS FOR METAL RESISTORS AND METH...

METHODS FOR FABRICATING FINFET INTEGRATED CIRCUITS WITH SIMULTANEOU...

REUSING ACTIVE AREA MASK FOR TRENCH TRANSFER EXPOSURE