Scott M. Williams

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for removing halogen-containing residues from substrate
- Patent number 8,992,689
- Issue date Mar 31, 2015
- Applied Materials, Inc.
- Adauto Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method extending the service interval of a gas distribution plate
- Patent number 8,845,816
- Issue date Sep 30, 2014
- Applied Materials, Inc.
- Adauto Diaz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for removing a halogen-containing residue
- Patent number 7,846,347
- Issue date Dec 7, 2010
- Applied Materials, Inc.
- Mark N. Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for removing a halogen-containing residue
- Patent number 7,374,696
- Issue date May 20, 2008
- Applied Materials, Inc.
- Mark N. Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch methods to form anisotropic features for high aspect ratio app...
- Patent number 7,368,394
- Issue date May 6, 2008
- Applied Materials, Inc.
- Meihua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-stage etching process
- Patent number 6,787,054
- Issue date Sep 7, 2004
- Xikun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated shallow trench isolation approach
- Patent number 6,677,242
- Issue date Jan 13, 2004
- Applied Materials Inc.
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride open etch process based on trifluoromethane and sulfur hexa...
- Patent number 6,589,879
- Issue date Jul 8, 2003
- Applied Materials, Inc.
- Scott M. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of silicon etch and chamber cleaning processes
- Patent number 6,566,270
- Issue date May 20, 2003
- Applied Materials Inc.
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-stage self-cleaning silicon etch process
- Patent number 6,527,968
- Issue date Mar 4, 2003
- Applied Materials Inc.
- Xikun Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD EXTENDING THE SERVICE INTERVAL OF A GAS DISTRIBUTION PLATE
- Publication number 20120222752
- Publication date Sep 6, 2012
- Applied Materials, Inc.
- Adauto Diaz
- B08 - CLEANING
Information Patent Application
METHOD FOR REMOVING HALOGEN-CONTAINING RESIDUES FROM SUBSTRATE
- Publication number 20120222699
- Publication date Sep 6, 2012
- Applied Materials, Inc.
- Adauto Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REMOVING BYPRODUCTS FROM LOAD LOCK CHAMBERS
- Publication number 20110304078
- Publication date Dec 15, 2011
- Applied Materials, Inc.
- JARED AHMAD LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR RECESS ETCHING
- Publication number 20080146034
- Publication date Jun 19, 2008
- Applied Materials, Inc.
- MEIHUA SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH METHODS TO FORM ANISOTROPIC FEATURES FOR HIGH ASPECT RATIO APP...
- Publication number 20080057729
- Publication date Mar 6, 2008
- Meihua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS FOR REMOVING A HALOGEN-CONTAINING RESIDUE
- Publication number 20070272359
- Publication date Nov 29, 2007
- Applied Materials, Inc.
- MARK N. KAWAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING A HALOGEN-CONTAINING RESIDUE
- Publication number 20070254489
- Publication date Nov 1, 2007
- Applied Materials, Inc.
- MARK N. KAWAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch methods to form anisotropic features for high aspect ratio app...
- Publication number 20070202700
- Publication date Aug 30, 2007
- APPLIED MATERIALS, INC.
- Uwe Leucke
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Etch methods to form anisotropic features for high aspect ratio app...
- Publication number 20070199922
- Publication date Aug 30, 2007
- APPLIED MATERIALS, INC.
- Meihua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for removing a halogen-containing residue
- Publication number 20040203251
- Publication date Oct 14, 2004
- Mark N. Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming bilayer resist patterns
- Publication number 20040018742
- Publication date Jan 29, 2004
- APPLIED MATERIALS, INC.
- Jim Zhongyi He
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Two-stage etching process
- Publication number 20030173333
- Publication date Sep 18, 2003
- APPLIED MATERIALS, INC.
- Xikun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride open etch process based on trifluoromethane and sulfur hexa...
- Publication number 20020132486
- Publication date Sep 19, 2002
- APPLIED MATERIALS, INC.
- Scott M. Williams
- H01 - BASIC ELECTRIC ELEMENTS

Scott M. Williams

Person

Patents Grantslast 30 patents

Method for removing halogen-containing residues from substrate

Method extending the service interval of a gas distribution plate

Method for removing a halogen-containing residue

Method and apparatus for removing a halogen-containing residue

Etch methods to form anisotropic features for high aspect ratio app...

Two-stage etching process

Integrated shallow trench isolation approach

Nitride open etch process based on trifluoromethane and sulfur hexa...

Integration of silicon etch and chamber cleaning processes

Two-stage self-cleaning silicon etch process

Patents Applicationslast 30 patents

METHOD EXTENDING THE SERVICE INTERVAL OF A GAS DISTRIBUTION PLATE

METHOD FOR REMOVING HALOGEN-CONTAINING RESIDUES FROM SUBSTRATE

METHODS FOR REMOVING BYPRODUCTS FROM LOAD LOCK CHAMBERS

METHOD FOR RECESS ETCHING

ETCH METHODS TO FORM ANISOTROPIC FEATURES FOR HIGH ASPECT RATIO APP...

APPARATUS FOR REMOVING A HALOGEN-CONTAINING RESIDUE

METHOD FOR REMOVING A HALOGEN-CONTAINING RESIDUE

Etch methods to form anisotropic features for high aspect ratio app...

Etch methods to form anisotropic features for high aspect ratio app...

Method and apparatus for removing a halogen-containing residue

Forming bilayer resist patterns

Two-stage etching process

Nitride open etch process based on trifluoromethane and sulfur hexa...