Seiji Mizuniwa

Person

Ibaraki-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
P-type GaAs single crystal and its production method
- Patent number 7,175,707
- Issue date Feb 13, 2007
- Hitachi Cable Ltd.
- Kenya Itani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single crystal of compound semiconductor and sub...
- Patent number 6,878,202
- Issue date Apr 12, 2005
- Hitachi Cable, Ltd.
- Masaya Ohnishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer and manufacturing method thereof as well as light-e...
- Patent number 6,413,791
- Issue date Jul 2, 2002
- Hitachi Cable Ltd.
- Yukiya Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for fabricating single crystal
- Patent number 6,409,831
- Issue date Jun 25, 2002
- Hitachi Cable Ltd.
- Seiji Mizuniwa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for fabricating single crystal
- Patent number 6,290,773
- Issue date Sep 18, 2001
- Hitachi Cable Ltd.
- Seiji Mizuniwa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light-emitting diode having moisture-proof characteristics and high...
- Patent number 6,043,509
- Issue date Mar 28, 2000
- Hitachi Cable, Ltd.
- Tooru Kurihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and manufacturing method thereof as well as light-e...
- Patent number 5,965,908
- Issue date Oct 12, 1999
- Hitach Cabel, Ltd.
- Yukiya Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making light-emitting diode having improved moisture res...
- Patent number 5,888,843
- Issue date Mar 30, 1999
- Hitachi Cable, Ltd.
- Tooru Kurihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating GaAs single crystal
- Patent number 5,007,979
- Issue date Apr 16, 1991
- Hitachi Cable Limited
- Seiji Mizuniwa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing process of semi-insulating gallium arsenide single cr...
- Patent number 4,483,735
- Issue date Nov 20, 1984
- Hitachi Cable, Ltd.
- Tomoki Inada
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
P-type GaAs single crystal and its production method
- Publication number 20040187768
- Publication date Sep 30, 2004
- HITACHI CABLE, LTD.
- Kenya Itani
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for growing single crystal of compound semiconductor and sub...
- Publication number 20020139296
- Publication date Oct 3, 2002
- HITACHI CABLE LIMITED
- Masaya Ohnishi
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for fabricating single crystal
- Publication number 20010018892
- Publication date Sep 6, 2001
- Seiji Mizuniwa
- C30 - CRYSTAL GROWTH

Seiji Mizuniwa

Person

Patents Grantslast 30 patents

P-type GaAs single crystal and its production method

Method for growing single crystal of compound semiconductor and sub...

Epitaxial wafer and manufacturing method thereof as well as light-e...

Apparatus for fabricating single crystal

Method and apparatus for fabricating single crystal

Light-emitting diode having moisture-proof characteristics and high...

Epitaxial wafer and manufacturing method thereof as well as light-e...

Method for making light-emitting diode having improved moisture res...

Method of fabricating GaAs single crystal

Manufacturing process of semi-insulating gallium arsenide single cr...

Patents Applicationslast 30 patents

P-type GaAs single crystal and its production method

Method for growing single crystal of compound semiconductor and sub...

Apparatus for fabricating single crystal