SEIKO YOSHIDA

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YOKOHAMA-SHI, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device including a seamless...
- Patent number 6,333,274
- Issue date Dec 25, 2001
- Kabushiki Kaisha Toshiba
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a conductor with a wedge shaped depression
- Patent number 6,051,885
- Issue date Apr 18, 2000
- Kabushiki Kaisha Toshiba
- Seiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation with oxide-nitride/oxynitride liner
- Patent number 6,046,487
- Issue date Apr 4, 2000
- International Business Machines Corporation
- John Preston Benedict
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a contact for contacting an impurity region formed...
- Patent number 5,885,863
- Issue date Mar 23, 1999
- Kabushiki Kaisha Toshiba
- Seiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation with oxide-nitride/oxynitride liner
- Patent number 5,763,315
- Issue date Jun 9, 1998
- International Business Machines Corporation
- John Preston Benedict
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A SEAMLESS...
- Publication number 20010023134
- Publication date Sep 20, 2001
- HIROYUKI AKATSU
- H01 - BASIC ELECTRIC ELEMENTS