Sen-Fu Chen

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming corrosion inhibited conductor layer
- Patent number 6,682,659
- Issue date Jan 27, 2004
- Taiwan Semiconductor Manufacturing Company
- Ching-Wen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon structures with different resistance values for gate el...
- Patent number 6,627,971
- Issue date Sep 30, 2003
- Taiwan Semiconductor Manufacturing Company
- Chih-Heng Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implant method for forming Si3N4 spacer
- Patent number 6,624,466
- Issue date Sep 23, 2003
- Taiwan Semiconductor Manufacturing Company
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling and improving SOG etchback etcher
- Patent number 6,394,104
- Issue date May 28, 2002
- Taiwan Semiconductor Manufacturing Company
- Sen-Fu Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Implant method for forming Si3N4 spacer
- Patent number 6,380,030
- Issue date Apr 30, 2002
- Taiwan Semiconductor Manufacturing Company
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing a semiconductor wafer to receive a protective...
- Patent number 6,320,269
- Issue date Nov 20, 2001
- Taiwan Semiconductor Manufacturing Company
- Sen-Fu Chen
- B24 - GRINDING POLISHING
Information Patent Grant
Method to prevent auto-doping induced threshold voltage shift
- Patent number 6,232,172
- Issue date May 15, 2001
- Taiwan Semiconductor Manufacturing Company
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce dual polysilicon resistance in an integrated circuit
- Patent number 6,211,031
- Issue date Apr 3, 2001
- Taiwan Semiconductor Manufacturing Company
- Dah-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating polysilicon structures with different resista...
- Patent number 6,162,584
- Issue date Dec 19, 2000
- Taiwan Semiconductor Manufacturing Company
- Sen-Fu Chen
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of fabricating polysilicon structures with different resista...
- Patent number 6,143,474
- Issue date Nov 7, 2000
- Taiwan Semiconductor Manufacturing Company
- Chih-Heng Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of simplified contact etching and ion implantation for CMOS...
- Patent number 6,093,629
- Issue date Jul 25, 2000
- Taiwan Semiconductor Manufacturing Company
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon residue free process by thermal treatment
- Patent number 6,077,776
- Issue date Jun 20, 2000
- Taiwan Semiconductor Manufacturing Company
- Ching-Wen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing CMOS image sensor leakage free with double...
- Patent number 6,071,826
- Issue date Jun 6, 2000
- Taiwan Semiconductor Manufacturing Company
- Ching-Wen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damage free passivation layer etching process
- Patent number 6,001,538
- Issue date Dec 14, 1999
- Taiwan Semiconductor Manufacturing Company Ltd.
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for polymer removal after etching
- Patent number 5,904,570
- Issue date May 18, 1999
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate isolation process to minimize junction leakage
- Patent number 5,763,316
- Issue date Jun 9, 1998
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for bonding pad protection from damage
- Patent number 5,719,087
- Issue date Feb 17, 1998
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sen Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of monitoring and controlling a silicon nitride etch step
- Patent number 5,639,342
- Issue date Jun 17, 1997
- Taiwan Semiconductor Manufacturing Company Ltd.
- Sen Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming damage free patterned layers adjoining the edges...
- Patent number 5,633,210
- Issue date May 27, 1997
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bao R. Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Implant method for forming Si3N4 spacer
- Publication number 20020110972
- Publication date Aug 15, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS

Sen-Fu Chen

Person

Patents Grantslast 30 patents

Method for forming corrosion inhibited conductor layer

Polysilicon structures with different resistance values for gate el...

Implant method for forming Si3N4 spacer

Method of controlling and improving SOG etchback etcher

Implant method for forming Si3N4 spacer

Method for preparing a semiconductor wafer to receive a protective...

Method to prevent auto-doping induced threshold voltage shift

Method to produce dual polysilicon resistance in an integrated circuit

Method of fabricating polysilicon structures with different resista...

Method of fabricating polysilicon structures with different resista...

Method of simplified contact etching and ion implantation for CMOS...

Polysilicon residue free process by thermal treatment

Method of manufacturing CMOS image sensor leakage free with double...

Damage free passivation layer etching process

Method for polymer removal after etching

Substrate isolation process to minimize junction leakage

Process for bonding pad protection from damage

Method of monitoring and controlling a silicon nitride etch step

Method for forming damage free patterned layers adjoining the edges...

Patents Applicationslast 30 patents

Implant method for forming Si3N4 spacer