Sen Zhang

Person

Wuxi, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Laterally diffused metal oxide semiconductor device and manufacturi...
- Patent number 12,249,645
- Issue date Mar 11, 2025
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zhili Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 12,230,693
- Issue date Feb 18, 2025
- CSMC Technologies Fab2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 12,119,395
- Issue date Oct 15, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppression device and manufacturing method therefor
- Patent number 12,015,025
- Issue date Jun 18, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synchronous rectification control system and method for quasi-reson...
- Patent number 11,984,813
- Issue date May 14, 2024
- Southeast University
- Shen Xu
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Transient voltage suppression device and manufacturing method therefor
- Patent number 11,887,979
- Issue date Jan 30, 2024
- CSMC Technologies Fab2 Co., Ltd.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally double-diffused metal oxide semiconductor device
- Patent number 11,742,423
- Issue date Aug 29, 2023
- Southeast University
- Jing Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TVS device and manufacturing method therefor
- Patent number 11,430,780
- Issue date Aug 30, 2022
- CSMC Technologies Fab2 Co., Ltd.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate depletion mode VDMOS device and method for manufacturin...
- Patent number 11,387,349
- Issue date Jul 12, 2022
- CSMC Technologies Fab2 Co., Ltd.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing noise of a switched reluctance motor based on a...
- Patent number 11,336,217
- Issue date May 17, 2022
- CSMC Technologies FAB2 Co., Ltd.
- Rui Zhong
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method of manufacturing an LDMOS device having a well region below...
- Patent number 11,309,406
- Issue date Apr 19, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device and electronic apparatus
- Patent number 11,276,690
- Issue date Mar 15, 2022
- CSMC Technologies FAB2 Co., Ltd.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor device and integrated semico...
- Patent number 11,257,720
- Issue date Feb 22, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppression device and manufacturing method therefor
- Patent number 11,233,045
- Issue date Jan 25, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused metal oxide semiconductor component and man...
- Patent number 11,227,948
- Issue date Jan 18, 2022
- CSMC Technologies FAB2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device and integrated semico...
- Patent number 11,171,223
- Issue date Nov 9, 2021
- CSMC Technologies FAB2 Co., Ltd.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit chip and manufacturing method therefor, and gate...
- Patent number 11,056,402
- Issue date Jul 6, 2021
- CSMC Technologies FAB2 Co., Ltd.
- Lihui Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device integrated with junction field effect transistor and method...
- Patent number 10,879,385
- Issue date Dec 29, 2020
- CSMC Technologies FAB2 Co., Ltd.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device integrated with junction field effect transistor and method...
- Patent number 10,872,823
- Issue date Dec 22, 2020
- CSMC Technologies FAB2 Co., Ltd.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device integrated with depletion-mode junction fielf-effect transis...
- Patent number 10,867,995
- Issue date Dec 15, 2020
- CSMC Technologies FAB2 Co., Ltd.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related method of adjusting threshold volt...
- Patent number 10,818,655
- Issue date Oct 27, 2020
- CSMC Technologies FAB2 Co., Ltd.
- Guangsheng Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated gate bipolar transistor
- Patent number 10,290,726
- Issue date May 14, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal-oxide-semiconductor field-effect transistor
- Patent number 10,014,392
- Issue date Jul 3, 2018
- CSMC Technologies Fab2 Co., Ltd.
- Shukun Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having ESD protection structure
- Patent number 9,953,970
- Issue date Apr 24, 2018
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangsheng Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor device and manufacturi...
- Patent number 9,837,532
- Issue date Dec 5, 2017
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangsheng Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
P-TYPE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANU...
- Publication number 20250056834
- Publication date Feb 13, 2025
- SOUTHEAST UNIVERSITY
- Long ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTING LATERAL INSULATED-GATE BIPOLAR TRANSISTOR
- Publication number 20240222478
- Publication date Jul 4, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Sen ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE SELECTIVE ETCHING TECHNOLOGY FOR THICK SOI DEVICES
- Publication number 20240112914
- Publication date Apr 4, 2024
- University of Electronic Science and Technology of China
- Bo ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
- Publication number 20240072178
- Publication date Feb 29, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURIN...
- Publication number 20230146299
- Publication date May 11, 2023
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Jingchuan ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transient Voltage Suppression Device And Manufacturing Method Therefor
- Publication number 20230122120
- Publication date Apr 20, 2023
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR...
- Publication number 20230036341
- Publication date Feb 2, 2023
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Jingchuan ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20220376094
- Publication date Nov 24, 2022
- SOUTHEAST UNIVERSITY
- Long ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20220367682
- Publication date Nov 17, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Nailong HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...
- Publication number 20220359673
- Publication date Nov 10, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Jingchuan ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE
- Publication number 20220352369
- Publication date Nov 3, 2022
- SOUTHEAST UNIVERSITY
- JING ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...
- Publication number 20220336657
- Publication date Oct 20, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zhili ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNCHRONOUS RECTIFICATION CONTROL SYSTEM AND METHOD FOR QUASI-RESON...
- Publication number 20220052613
- Publication date Feb 17, 2022
- SOUTHEAST UNIVERSITY
- Shen XU
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
TVS Device And Manufacturing Method Therefor
- Publication number 20210358903
- Publication date Nov 18, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transient Voltage Suppression Device And Manufacturing Method Therefor
- Publication number 20210313312
- Publication date Oct 7, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transient Voltage Suppression Device and Manufacturing Method Therefor
- Publication number 20210249403
- Publication date Aug 12, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210175347
- Publication date Jun 10, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Nailong HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Gate Depletion Mode VDMOS Device and Method for Manufacturin...
- Publication number 20210167191
- Publication date Jun 3, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR COMPONENT AND MAN...
- Publication number 20210036150
- Publication date Feb 4, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Nailong HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND INTEGRATED SEMICO...
- Publication number 20200350420
- Publication date Nov 5, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING NOISE OF A SWITCHED RELUCTANCE MOTOR BASED ON A...
- Publication number 20200343845
- Publication date Oct 29, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Rui ZHONG
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND INTERGRATED SEMIC...
- Publication number 20200335607
- Publication date Oct 22, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
- Publication number 20200335498
- Publication date Oct 22, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shikang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CHIP AND MANUFACTURING METHOD THEREFOR, AND GATE...
- Publication number 20200258782
- Publication date Aug 13, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Lihui GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INTEGRATED WITH JUNCTION FIELD EFFECT TRANSISTOR AND METHOD...
- Publication number 20190259669
- Publication date Aug 22, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INTEGRATED WITH JUNCTION FIELD EFFECT TRANSISTOR AND METHOD...
- Publication number 20190252537
- Publication date Aug 15, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INTEGRATED WITH DEPLETION-MODE JUNCTION FIELF-EFFECT TRANSIS...
- Publication number 20190221560
- Publication date Jul 18, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE P-TYPE LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCT...
- Publication number 20180190815
- Publication date Jul 5, 2018
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangsheng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
- Publication number 20180122921
- Publication date May 3, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20180012980
- Publication date Jan 11, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Laterally diffused metal oxide semiconductor device and manufacturi...

Semiconductor device and manufacturing method therefor

Insulated gate bipolar transistor

Transient voltage suppression device and manufacturing method therefor

Synchronous rectification control system and method for quasi-reson...

Transient voltage suppression device and manufacturing method therefor

Laterally double-diffused metal oxide semiconductor device

TVS device and manufacturing method therefor

Trench gate depletion mode VDMOS device and method for manufacturin...

Method for reducing noise of a switched reluctance motor based on a...

Method of manufacturing an LDMOS device having a well region below...

Integrated semiconductor device and electronic apparatus

Manufacturing method for semiconductor device and integrated semico...

Transient voltage suppression device and manufacturing method therefor

Lateral double-diffused metal oxide semiconductor component and man...

Method for manufacturing semiconductor device and integrated semico...

Integrated circuit chip and manufacturing method therefor, and gate...

Device integrated with junction field effect transistor and method...

Device integrated with junction field effect transistor and method...

Device integrated with depletion-mode junction fielf-effect transis...

Semiconductor device and related method of adjusting threshold volt...

Lateral insulated gate bipolar transistor

Laterally diffused metal-oxide-semiconductor field-effect transistor

Semiconductor device having ESD protection structure

Laterally diffused metal oxide semiconductor device and manufacturi...

Patents Applicationslast 30 patents

P-TYPE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANU...

REVERSE CONDUCTING LATERAL INSULATED-GATE BIPOLAR TRANSISTOR

VARIABLE SELECTIVE ETCHING TECHNOLOGY FOR THICK SOI DEVICES

DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURIN...

Transient Voltage Suppression Device And Manufacturing Method Therefor

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR...

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...

LATERALLY DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...

SYNCHRONOUS RECTIFICATION CONTROL SYSTEM AND METHOD FOR QUASI-RESON...

TVS Device And Manufacturing Method Therefor

Transient Voltage Suppression Device And Manufacturing Method Therefor

Transient Voltage Suppression Device and Manufacturing Method Therefor

LDMOS DEVICE AND MANUFACTURING METHOD THEREOF

Trench Gate Depletion Mode VDMOS Device and Method for Manufacturin...

LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR COMPONENT AND MAN...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND INTEGRATED SEMICO...

METHOD FOR REDUCING NOISE OF A SWITCHED RELUCTANCE MOTOR BASED ON A...

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND INTERGRATED SEMIC...

INTEGRATED SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

INTEGRATED CIRCUIT CHIP AND MANUFACTURING METHOD THEREFOR, AND GATE...

DEVICE INTEGRATED WITH JUNCTION FIELD EFFECT TRANSISTOR AND METHOD...

DEVICE INTEGRATED WITH JUNCTION FIELD EFFECT TRANSISTOR AND METHOD...

DEVICE INTEGRATED WITH DEPLETION-MODE JUNCTION FIELF-EFFECT TRANSIS...

HIGH VOLTAGE P-TYPE LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCT...

LATERALLY DIFFUSED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

LATERAL INSULATED GATE BIPOLAR TRANSISTOR