Seok-Hee Lee

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Portland, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Method to reduce junction leakage through partial regrowth with ult...
- Patent number 7,790,587
- Issue date Sep 7, 2010
- Intel Corporation
- Jack Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method to reduce junction leakage through partial regrowth with ult...
- Publication number 20080121882
- Publication date May 29, 2008
- Jack Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implant and anneal amorphization process
- Publication number 20070099404
- Publication date May 3, 2007
- Sridhar Govindaraju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial capping layer for transistor performance enhancement
- Publication number 20070004114
- Publication date Jan 4, 2007
- Seok-Hee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Codoping of source drains using carbon or fluorine ion implants to...
- Publication number 20040102013
- Publication date May 27, 2004
- Jack Hwang
- H01 - BASIC ELECTRIC ELEMENTS