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Patents Grantslast 30 patents

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Method of forming memory cells, high voltage devices and logic devi...
- Patent number 11,968,829
- Issue date Apr 23, 2024
- Silicon Storage Technology, Inc.
- Zhuoqiang Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a device with split gate non-volatile memory cell...
- Patent number 11,594,453
- Issue date Feb 28, 2023
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a device with FinFET split gate non-volatile memo...
- Patent number 11,114,451
- Issue date Sep 7, 2021
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory cells with FinFET structure and HKMG...
- Patent number 10,937,794
- Issue date Mar 2, 2021
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory cells and logic devices with FINFET...
- Patent number 10,818,680
- Issue date Oct 27, 2020
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET-based split gate non-volatile flash memory with extended sou...
- Patent number 10,797,142
- Issue date Oct 6, 2020
- Silicon Storage Technology, Inc.
- Serguei Jourba
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate non-volatile memory cells with three-dimensional FinFET...
- Patent number 10,727,240
- Issue date Jul 28, 2020
- Silicon Store Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making split gate non-volatile memory cells with three-di...
- Patent number 10,644,012
- Issue date May 5, 2020
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory cells and logic devices with FinFET...
- Patent number 10,468,428
- Issue date Nov 5, 2019
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two transistor FinFET-based split gate non-volatile floating gate f...
- Patent number 10,312,247
- Issue date Jun 4, 2019
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING MEMORY CELLS, HIGH VOLTAGE DEVICES AND LOGIC DEVI...
- Publication number 20230292504
- Publication date Sep 14, 2023
- Silicon Storage Technology, Inc.
- Zhuoqiang Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A DEVICE WITH PLANAR SPLIT GATE NON-VOLATILE MEMO...
- Publication number 20230290864
- Publication date Sep 14, 2023
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH MEMORY CELLS, HIGH VO...
- Publication number 20230262975
- Publication date Aug 17, 2023
- Silicon Storage Technology, Inc.
- Zhuoqiang Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Determining Defective Die Containing Non-volatile Memory...
- Publication number 20230101585
- Publication date Mar 30, 2023
- Silicon Storage Technology, Inc.
- Yuri Tkachev
- G11 - INFORMATION STORAGE
Information Patent Application
Method Of Forming A Device With Split Gate Non-volatile Memory Cell...
- Publication number 20220231037
- Publication date Jul 21, 2022
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming A Device With FINFET Split Gate Non-volatile Memo...
- Publication number 20210272973
- Publication date Sep 2, 2021
- Sillicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming A Device With Split Gate Non-volatile Memory Cell...
- Publication number 20210193671
- Publication date Jun 24, 2021
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET-Based Split Gate Non-volatile Flash Memory With Extended Sou...
- Publication number 20200176578
- Publication date Jun 4, 2020
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Non-volatile Memory Cells With FINFET Structure And HKMG...
- Publication number 20200176459
- Publication date Jun 4, 2020
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Non-Volatile Memory Cells With Three-Dimensional FINFET...
- Publication number 20200013786
- Publication date Jan 9, 2020
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Making Split Gate Non-Volatile Memory Cells With Three-Di...
- Publication number 20200013788
- Publication date Jan 9, 2020
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Non-volatile Memory Cells And Logic Devices With FINFET...
- Publication number 20200013789
- Publication date Jan 9, 2020
- Silicon Storage Technology, Inc.
- FENG ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY CELLS AND LOGIC DEVICES WITH FINFET...
- Publication number 20190326305
- Publication date Oct 24, 2019
- Silicon Storage Technology, Inc.
- FENG ZHOU
- H01 - BASIC ELECTRIC ELEMENTS

Serguei Jourba

Person

Patents Grantslast 30 patents

Method of forming memory cells, high voltage devices and logic devi...

Method of forming a device with split gate non-volatile memory cell...

Method of forming a device with FinFET split gate non-volatile memo...

Split gate non-volatile memory cells with FinFET structure and HKMG...

Split gate non-volatile memory cells and logic devices with FINFET...

FinFET-based split gate non-volatile flash memory with extended sou...

Split gate non-volatile memory cells with three-dimensional FinFET...

Method of making split gate non-volatile memory cells with three-di...

Split gate non-volatile memory cells and logic devices with FinFET...

Two transistor FinFET-based split gate non-volatile floating gate f...

Patents Applicationslast 30 patents

METHOD OF FORMING MEMORY CELLS, HIGH VOLTAGE DEVICES AND LOGIC DEVI...

METHOD OF FORMING A DEVICE WITH PLANAR SPLIT GATE NON-VOLATILE MEMO...

METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH MEMORY CELLS, HIGH VO...

Method of Determining Defective Die Containing Non-volatile Memory...

Method Of Forming A Device With Split Gate Non-volatile Memory Cell...

Method Of Forming A Device With FINFET Split Gate Non-volatile Memo...

Method Of Forming A Device With Split Gate Non-volatile Memory Cell...

FINFET-Based Split Gate Non-volatile Flash Memory With Extended Sou...

Split Gate Non-volatile Memory Cells With FINFET Structure And HKMG...

Split Gate Non-Volatile Memory Cells With Three-Dimensional FINFET...

Method Of Making Split Gate Non-Volatile Memory Cells With Three-Di...

Split Gate Non-volatile Memory Cells And Logic Devices With FINFET...

SPLIT GATE NON-VOLATILE MEMORY CELLS AND LOGIC DEVICES WITH FINFET...