Seung Yeon Kim

Person

Andover, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Conformal nitridation of one or more fin-type transistor layers
- Patent number 9,698,269
- Issue date Jul 4, 2017
- GLOBALFOUNDRIES Inc.
- Wei Hua Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation integration methods and devices formed the...
- Patent number 9,385,192
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal nitridation of one or more fin-type transistor layers
- Patent number 9,312,145
- Issue date Apr 12, 2016
- GLOBALFOUNDRIES Inc.
- Wei Hua Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having finFETs with improved doped channel regi...
- Patent number 9,287,180
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES, INC.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a gate by depositing a thin barrier layer on a titanium nit...
- Patent number 9,202,697
- Issue date Dec 1, 2015
- GLOBALFOUNDRIES Inc.
- Tien-Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation integration methods and devices formed the...
- Patent number 9,123,771
- Issue date Sep 1, 2015
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a FinFET semiconductor device with undoped fins
- Patent number 9,105,507
- Issue date Aug 11, 2015
- GLOBALFOUNDRIES Inc.
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having FinFETs with improved doped channel regi...
- Patent number 9,093,476
- Issue date Jul 28, 2015
- GLOBALFOUNDRIES, INC.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a finfet semiconductor device with undoped fins
- Patent number 8,969,932
- Issue date Mar 3, 2015
- GLOBALFOUNDRIES Inc.
- Andy C. Wei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS
- Publication number 20160190324
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Wei Hua TONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...
- Publication number 20150333121
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...
- Publication number 20150294915
- Publication date Oct 15, 2015
- GLOBALFOUNDRIES, Inc.
- Jinping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS
- Publication number 20150255277
- Publication date Sep 10, 2015
- GLOBALFOUNDRIES INC.
- Wei Hua TONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A FINFET SEMICONDUCTOR DEVICE WITH UNDOPED FINS
- Publication number 20150123214
- Publication date May 7, 2015
- GLOBALFOUNDRIES INC.
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...
- Publication number 20150035062
- Publication date Feb 5, 2015
- GLOBALFOUNDRIES, Inc.
- Jinping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR FABRICATING GATE STRUCTURES FOR SEMICONDUCT...
- Publication number 20150024585
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES Inc.
- Tien-Ying LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...
- Publication number 20140227858
- Publication date Aug 14, 2014
- GLOBALFOUNDRIES INC.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A FINFET SEMICONDUCTOR DEVICE WITH UNDOPED FINS
- Publication number 20140159126
- Publication date Jun 12, 2014
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF AVOIDING SHADOWING WHEN FORMING SOURCE/DRAIN IMPLANT REG...
- Publication number 20140113420
- Publication date Apr 24, 2014
- GLOBALFOUNDRIES INC.
- Vidmantas Sargunas
- H01 - BASIC ELECTRIC ELEMENTS

Seung Yeon Kim

Person

Patents Grantslast 30 patents

Conformal nitridation of one or more fin-type transistor layers

Shallow trench isolation integration methods and devices formed the...

Conformal nitridation of one or more fin-type transistor layers

Integrated circuits having finFETs with improved doped channel regi...

Forming a gate by depositing a thin barrier layer on a titanium nit...

Shallow trench isolation integration methods and devices formed the...

Methods of forming a FinFET semiconductor device with undoped fins

Integrated circuits having FinFETs with improved doped channel regi...

Methods of forming a finfet semiconductor device with undoped fins

Patents Applicationslast 30 patents

CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS

SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...

INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...

CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS

METHODS OF FORMING A FINFET SEMICONDUCTOR DEVICE WITH UNDOPED FINS

INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...

SYSTEMS AND METHODS FOR FABRICATING GATE STRUCTURES FOR SEMICONDUCT...

SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...

METHODS OF FORMING A FINFET SEMICONDUCTOR DEVICE WITH UNDOPED FINS

METHODS OF AVOIDING SHADOWING WHEN FORMING SOURCE/DRAIN IMPLANT REG...