Shahaji B. More

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method and structure for metal gate boundary isolation
- Patent number 12,243,919
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,938
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,752
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,183,790
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of formation
- Patent number 12,183,640
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures for semiconductor devices
- Patent number 12,170,335
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,170,325
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having merged source/drain features and metho...
- Patent number 12,165,924
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,166,041
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium tin gate-all-around device
- Patent number 12,154,951
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of a semiconductor device and method of forming same
- Patent number 12,154,831
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,148,794
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts
- Patent number 12,142,663
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,142,683
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Profile control in forming epitaxy regions for transistors
- Patent number 12,132,100
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and semiconductor dev...
- Patent number 12,132,051
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features of multi-gate devices
- Patent number 12,125,915
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with reduced defect and methods of forming same
- Patent number 12,125,892
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacer structures and methods for forming the same
- Patent number 12,119,390
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,119,392
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,119,394
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS and PMOS transistor gates with hafnium oxide layers and lantha...
- Patent number 12,107,015
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxial structures for semiconductor devices
- Patent number 12,100,626
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with epitaxy regions having mixed wavy and non-wavy portions
- Patent number 12,094,779
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,087,846
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate electrodes with voids
- Patent number 12,087,839
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully strained channel
- Patent number 12,080,761
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions extending below STI regions and profiles thereof
- Patent number 12,074,166
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFET LDD doping
- Patent number 12,068,371
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET fabrication methods
- Patent number 12,068,392
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20250072027
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Spacer Structures And Methods For Forming The Same
- Publication number 20250040218
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20250015129
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu KUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM TIN GATE-ALL-AROUND DEVICE
- Publication number 20250015140
- Publication date Jan 9, 2025
- Taiwean Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED STRESSORS IN EPITAXY SOURCE/DRAIN REGIONS
- Publication number 20240404885
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395905
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240395908
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240395631
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Chen HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20240387625
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240387735
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF
- Publication number 20240387737
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure of a Semiconductor Device and Method of Forming Same
- Publication number 20240387294
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS
- Publication number 20240387289
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Method of Forming Same
- Publication number 20240387292
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20240379853
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS
- Publication number 20240379814
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20240379456
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Source/Drain Structures for Multigate Devices and Methods...
- Publication number 20240379669
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INSULATING FINS
- Publication number 20240379797
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379682
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379683
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF
- Publication number 20240379753
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION
- Publication number 20240379773
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN FEATURES OF MULTI-GATE DEVICES
- Publication number 20240379861
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PROCESSING TOOL AND METHOD OF OPERATION
- Publication number 20240379398
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yan-Chun LIU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240371982
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET DEVICE AND METHODS OF FORMING THE SAME
- Publication number 20240372001
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME
- Publication number 20240371964
- Publication date Nov 7, 2024
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROFILE CONTROL IN FORMING EPITAXY REGIONS FOR TRANSISTORS
- Publication number 20240371976
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEV...
- Publication number 20240371878
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS

Shahaji B. More

Person

Patents Grantslast 30 patents

Method and structure for metal gate boundary isolation

FinFET device and method of forming same

FinFET device and method of forming same

Semiconductor device structure and methods of forming the same

Semiconductor device and methods of formation

Epitaxial structures for semiconductor devices

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor devices having merged source/drain features and metho...

Semiconductor device and method

Germanium tin gate-all-around device

Gate structure of a semiconductor device and method of forming same

Method of manufacturing a semiconductor device and a semiconductor...

Method for forming source/drain contacts

Method of manufacturing a semiconductor device and a semiconductor...

Profile control in forming epitaxy regions for transistors

Method of manufacturing semiconductor devices and semiconductor dev...

Source/drain features of multi-gate devices

Transistors with reduced defect and methods of forming same

Gate spacer structures and methods for forming the same

Semiconductor device and method

Method of manufacturing a semiconductor device and a semiconductor...

NMOS and PMOS transistor gates with hafnium oxide layers and lantha...

Source/drain epitaxial structures for semiconductor devices

FinFETs with epitaxy regions having mixed wavy and non-wavy portions

Semiconductor device and manufacturing method thereof

Transistor gate electrodes with voids

Fully strained channel

Epitaxy regions extending below STI regions and profiles thereof

Method for FinFET LDD doping

FinFET fabrication methods

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

Gate Spacer Structures And Methods For Forming The Same

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

GERMANIUM TIN GATE-ALL-AROUND DEVICE

EMBEDDED STRESSORS IN EPITAXY SOURCE/DRAIN REGIONS

SEMICONDUCTOR DEVICE AND METHOD

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF

Gate Structure of a Semiconductor Device and Method of Forming Same

DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS

FinFET Device and Method of Forming Same

FINFET DEVICE AND METHOD OF FORMING SAME

METHOD FOR FORMING SOURCE/DRAIN CONTACTS

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

Epitaxial Source/Drain Structures for Multigate Devices and Methods...

TRANSISTOR INSULATING FINS

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

SOURCE/DRAIN FEATURES OF MULTI-GATE DEVICES

SEMICONDUCTOR PROCESSING TOOL AND METHOD OF OPERATION

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

FinFET DEVICE AND METHODS OF FORMING THE SAME

TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME

PROFILE CONTROL IN FORMING EPITAXY REGIONS FOR TRANSISTORS

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEV...