Shang-De Ted Chang

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low voltage low capacitance flash memory array
- Patent number 7,505,325
- Issue date Mar 17, 2009
- Chingis Technology Corporation
- Shang-De Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory solution using single-poly pFlash technology
- Patent number 7,339,229
- Issue date Mar 4, 2008
- Chingis Technology Corporation
- Alex Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Voice quality analysis of speech packets by substituting coded refe...
- Patent number 7,299,176
- Issue date Nov 20, 2007
- Yueh-ju Lee
- G10 - MUSICAL INSTRUMENTS ACOUSTICS
Information Patent Grant
Nonvolatile memory solution using single-poly pFlash technology
- Patent number 7,078,761
- Issue date Jul 18, 2006
- Chingis Technology Corporation
- Alex Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for programming PMOS memory cells
- Patent number 5,966,329
- Issue date Oct 12, 1999
- Programmable Microelectronics Corporation
- Ching-Hsiang Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Low voltage one transistor flash EEPROM cell using fowler-nordheim...
- Patent number 5,940,325
- Issue date Aug 17, 1999
- Rohm Corporation
- Shang-De Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile PMOS two transistor memory cell and array
- Patent number 5,912,842
- Issue date Jun 15, 1999
- Programmable Microelectronics Corp.
- Shang-De Ted Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
PMOS memory array having OR gate architecture
- Patent number 5,909,392
- Issue date Jun 1, 1999
- Programmable Microelectronics Corporation
- Shang-De Ted Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
PMOS flash EEPROM cell with single poly
- Patent number 5,841,165
- Issue date Nov 24, 1998
- Programmable Microelectronics Corporation
- Shang-De Ted Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory array architecture
- Patent number 5,801,994
- Issue date Sep 1, 1998
- Programmable Microelectronics Corporation
- Shang-De Ted Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
PMOS single-poly non-volatile memory structure
- Patent number 5,761,121
- Issue date Jun 2, 1998
- Programmable Microelectronics Corporation
- Shang-De Ted Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMOS flash EEPROM cell with single poly
- Patent number 5,736,764
- Issue date Apr 7, 1998
- Programmable Microelectronics Corporation
- Shang-De Ted Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to incorporate non-volatile memory and logic components into...
- Patent number 5,723,355
- Issue date Mar 3, 1998
- Programmable Microelectronics Corp.
- Shang-De Ted Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double poly split gate PMOS flash memory cell
- Patent number 5,706,227
- Issue date Jan 6, 1998
- Programmable Microelectronics Corporation
- Shang-De Ted Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Triple poly PMOS flash memory cell
- Patent number 5,691,939
- Issue date Nov 25, 1997
- Programmable Microelectronics Corporation
- Shang-De Ted Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Low voltage one transistor flash EEPROM cell using Fowler-Nordheim...
- Patent number 5,689,459
- Issue date Nov 18, 1997
- Rohm Corporation
- Shang-De Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Low voltage one transistor flash eeprom cell using fowler-nordheim...
- Patent number 5,687,120
- Issue date Nov 11, 1997
- Rohn Corporation
- Shang-De Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
PMOS memory cell with hot electron injection programming and tunnel...
- Patent number 5,687,118
- Issue date Nov 11, 1997
- Programmable Microelectronics Corporation
- Shang-De Ted Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
PMOS flash memory cell capable of multi-level threshold voltage sto...
- Patent number 5,666,307
- Issue date Sep 9, 1997
- Programmable Microelectronics Corporation
- Shang-De Ted Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Low voltage one transistor flash EEPROM cell using Fowler-Nordheim...
- Patent number 5,615,147
- Issue date Mar 25, 1997
- Rohm Corporation
- Shang-De Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Low voltage one transistor flash EEPROM cell using Fowler-Nordheim...
- Patent number 5,587,947
- Issue date Dec 24, 1996
- Rohm Corporation
- Shang-De Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile electrically erasable memory with PMOS transistor NAND...
- Patent number 5,581,504
- Issue date Dec 3, 1996
- Programmable Microelectronics Corp.
- Shang-De T. Chang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Low voltage low capacitance flash memory array
- Publication number 20080080247
- Publication date Apr 3, 2008
- CHINGIS TECHNOLOGY CORPORATION
- Shang-De Chang
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile memory solution using single-poly pFlash technology
- Publication number 20060244043
- Publication date Nov 2, 2006
- Alex Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile memory solution using single-poly pflash technology
- Publication number 20050199936
- Publication date Sep 15, 2005
- Alex Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Source/drain adjust implant
- Publication number 20050145924
- Publication date Jul 7, 2005
- I-Sheng Liu
- G11 - INFORMATION STORAGE

Shang-De Ted Chang

Person

Patents Grantslast 30 patents

Low voltage low capacitance flash memory array

Nonvolatile memory solution using single-poly pFlash technology

Voice quality analysis of speech packets by substituting coded refe...

Nonvolatile memory solution using single-poly pFlash technology

Apparatus and method for programming PMOS memory cells

Low voltage one transistor flash EEPROM cell using fowler-nordheim...

Nonvolatile PMOS two transistor memory cell and array

PMOS memory array having OR gate architecture

PMOS flash EEPROM cell with single poly

Non-volatile memory array architecture

PMOS single-poly non-volatile memory structure

PMOS flash EEPROM cell with single poly

Method to incorporate non-volatile memory and logic components into...

Double poly split gate PMOS flash memory cell

Triple poly PMOS flash memory cell

Low voltage one transistor flash EEPROM cell using Fowler-Nordheim...

Low voltage one transistor flash eeprom cell using fowler-nordheim...

PMOS memory cell with hot electron injection programming and tunnel...

PMOS flash memory cell capable of multi-level threshold voltage sto...

Low voltage one transistor flash EEPROM cell using Fowler-Nordheim...

Low voltage one transistor flash EEPROM cell using Fowler-Nordheim...

Non-volatile electrically erasable memory with PMOS transistor NAND...

Patents Applicationslast 30 patents

Low voltage low capacitance flash memory array

Nonvolatile memory solution using single-poly pFlash technology

Nonvolatile memory solution using single-poly pflash technology

Source/drain adjust implant