Shay Reboh

Person

Guilderland, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making a transistor having a source and a drain obtained...
- Patent number 10,170,621
- Issue date Jan 1, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a channel structure formed from a plurality of...
- Patent number 10,141,424
- Issue date Nov 27, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Remi Coquand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a transistor having a vertical channel havin...
- Patent number 10,134,875
- Issue date Nov 20, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recrystallization of source and drain blocks from above
- Patent number 9,246,006
- Issue date Jan 26, 2016
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED FIELD EFFECT TRANSISTOR WITH EPITAXY CUT FOR SOURCE/DRAIN C...
- Publication number 20250239521
- Publication date Jul 24, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIFTED-CHANNEL STACKED FETS
- Publication number 20250221029
- Publication date Jul 3, 2025
- International Business Machines Corporation
- Shay Reboh
Information Patent Application
STACKED FORKSHEET TRANSISTORS
- Publication number 20250221030
- Publication date Jul 3, 2025
- International Business Machines Corporation
- Abir Shadman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVELY MERGED GATES IN STACKED FETS
- Publication number 20250221028
- Publication date Jul 3, 2025
- International Business Machines Corporation
- Shay Reboh
Information Patent Application
DIRECT BACKSIDE CONTACTS WITH LOCAL INTERCONNECTS
- Publication number 20250210518
- Publication date Jun 26, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACTS FOR STACKED TRANSISTOR STRUCTURES WITH SHIFTED CH...
- Publication number 20250212483
- Publication date Jun 26, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH ALIGNED CELL BOUNDARIES AND SHIF...
- Publication number 20250212508
- Publication date Jun 26, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH A ROBUST CONTACT
- Publication number 20250203938
- Publication date Jun 19, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Application
SEMICONDUCTOR DEVICE WITH STACKED DEVICE TYPES
- Publication number 20250203946
- Publication date Jun 19, 2025
- International Business Machines Corporation
- Shay Reboh
Information Patent Application
SELF-ALIGNED DIELECTRIC ISOLATION ON SOURCE/DRAINS
- Publication number 20250203935
- Publication date Jun 19, 2025
- International Business Machines Corporation
- Shay Reboh
Information Patent Application
SECOND AIR GAP TYPE FOR SUBTRACTIVE INTERCONNECTS
- Publication number 20250192054
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE SIGNAL CONTACT AND POWER FORMATION FOR STACKED TRANSISTORS
- Publication number 20250194161
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICE STRUCTURES WITH VARYING LAYER CHARACTERISTICS
- Publication number 20250194182
- Publication date Jun 12, 2025
- International Business Machines Corporation
- James P. Mazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR WITH NON-ACTIVE REGION
- Publication number 20250194241
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Chen Zhang
Information Patent Application
STACKED FET WITH SHIFTED CHANNEL STRUCTURE
- Publication number 20250194163
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Shay Reboh
Information Patent Application
STACKED FORKSHEET FET WITH SHARED AND/OR INDEPENDENT GATES
- Publication number 20250194238
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL INTERCONNECT IN SEQUENTIAL STACKING
- Publication number 20250194164
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOSHEET DEVICES WITH INTERFACIAL LAYERS
- Publication number 20250185355
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Debarghya Sarkar
Information Patent Application
MULTIPLE THRESHOLD STACKED FIELD EFFECT TRANSISTORS
- Publication number 20250185307
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Application
STACKED TRANSISTORS HAVING DUAL WORK FUNCTION GATES
- Publication number 20250185361
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Chen Zhang
Information Patent Application
OFFSET STAGGERED STACKED FIELD EFFECT TRANSISTOR (SFET) DEVICES
- Publication number 20250185345
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Application
BACKSIDE DIFFUSION BREAK
- Publication number 20250157886
- Publication date May 15, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULL AND HALF SINGLE DIFFUSION BREAK WITH STACKED FET
- Publication number 20250151342
- Publication date May 8, 2025
- International Business Machines Corporation
- Chen Zhang
Information Patent Application
STACKED FET WITH ASYMMETRIC CELL BOUNDARY
- Publication number 20250133816
- Publication date Apr 24, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT AT GATE ENDS THROUGH BACKSIDE GATE CUT
- Publication number 20250089288
- Publication date Mar 13, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HANDLER WAFER WITH LOW OVERLAY RESIDUAL BACKSIDE PATTERNING
- Publication number 20250087527
- Publication date Mar 13, 2025
- International Business Machines Corporation
- Prabudhya Roy Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...
- Publication number 20250062190
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE BACKSIDE ISOLATION FEATURE INTEGRATION
- Publication number 20250056865
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTORS
- Publication number 20250048688
- Publication date Feb 6, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT
- Publication number 20250040240
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of making a transistor having a source and a drain obtained...

Method of producing a channel structure formed from a plurality of...

Method for fabricating a transistor having a vertical channel havin...

Recrystallization of source and drain blocks from above

Patents Applicationslast 30 patents

STACKED FIELD EFFECT TRANSISTOR WITH EPITAXY CUT FOR SOURCE/DRAIN C...

SHIFTED-CHANNEL STACKED FETS

STACKED FORKSHEET TRANSISTORS

SELECTIVELY MERGED GATES IN STACKED FETS

DIRECT BACKSIDE CONTACTS WITH LOCAL INTERCONNECTS

BACKSIDE CONTACTS FOR STACKED TRANSISTOR STRUCTURES WITH SHIFTED CH...

STACKED TRANSISTOR STRUCTURES WITH ALIGNED CELL BOUNDARIES AND SHIF...

STACKED FET WITH A ROBUST CONTACT

SEMICONDUCTOR DEVICE WITH STACKED DEVICE TYPES

SELF-ALIGNED DIELECTRIC ISOLATION ON SOURCE/DRAINS

SECOND AIR GAP TYPE FOR SUBTRACTIVE INTERCONNECTS

BACKSIDE SIGNAL CONTACT AND POWER FORMATION FOR STACKED TRANSISTORS

STACKED DEVICE STRUCTURES WITH VARYING LAYER CHARACTERISTICS

STACKED TRANSISTOR WITH NON-ACTIVE REGION

STACKED FET WITH SHIFTED CHANNEL STRUCTURE

STACKED FORKSHEET FET WITH SHARED AND/OR INDEPENDENT GATES

LOCAL INTERCONNECT IN SEQUENTIAL STACKING

STACKED NANOSHEET DEVICES WITH INTERFACIAL LAYERS

MULTIPLE THRESHOLD STACKED FIELD EFFECT TRANSISTORS

STACKED TRANSISTORS HAVING DUAL WORK FUNCTION GATES

OFFSET STAGGERED STACKED FIELD EFFECT TRANSISTOR (SFET) DEVICES

BACKSIDE DIFFUSION BREAK

FULL AND HALF SINGLE DIFFUSION BREAK WITH STACKED FET

STACKED FET WITH ASYMMETRIC CELL BOUNDARY

GATE CONTACT AT GATE ENDS THROUGH BACKSIDE GATE CUT

HANDLER WAFER WITH LOW OVERLAY RESIDUAL BACKSIDE PATTERNING

STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...

SEMICONDUCTOR DEVICE BACKSIDE ISOLATION FEATURE INTEGRATION

STACKED FIELD EFFECT TRANSISTORS

STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT