Shengchang CHEN

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Patents Grantslast 30 patents

Information Patent Grant
Nitride based semiconductor device with improved lattice quality
- Patent number 10,600,935
- Issue date Mar 24, 2020
- XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Chang-Cheng Chuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride underlayer and fabrication method thereof
- Patent number 10,431,713
- Issue date Oct 1, 2019
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Wen-yu Lin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride underlayer and fabrication method thereof
- Patent number 10,418,518
- Issue date Sep 17, 2019
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Shengchang Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200365761
- Publication date Nov 19, 2020
- XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- CHANG-CHENG CHUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190371961
- Publication date Dec 5, 2019
- XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- CHANG-CHENG CHUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE BASED SEMICONDUCTOR DEVICE
- Publication number 20190280160
- Publication date Sep 12, 2019
- XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- CHANG-CHENG CHUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Underlayer and Fabrication Method Thereof
- Publication number 20180145214
- Publication date May 24, 2018
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- Shengchang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Underlayer and Fabrication Method Thereof
- Publication number 20180122635
- Publication date May 3, 2018
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- Wen-yu LIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...