Shenjian Liu

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Line width roughness improvement with noble gas plasma
- Patent number 9,466,502
- Issue date Oct 11, 2016
- Lam Research Corporation
- Shih-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line width roughness improvement with noble gas plasma
- Patent number 9,263,284
- Issue date Feb 16, 2016
- Lam Research Corporation
- Shih-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etch method to reduce micro-loading
- Patent number 8,901,004
- Issue date Dec 2, 2014
- Lam Research Corporation
- Tom Kamp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line width roughness improvement with noble gas plasma
- Patent number 8,753,804
- Issue date Jun 17, 2014
- Lam Research Corporation
- Shih-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsed bias plasma process to control microloading
- Patent number 8,609,546
- Issue date Dec 17, 2013
- Lam Research Corporation
- Wonchul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extending lifetime of yttrium oxide as a plasma chamber material
- Patent number 8,585,844
- Issue date Nov 19, 2013
- Lam Research Corporation
- Hong Shih
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of controlling etch microloading for a tungsten-containing l...
- Patent number 8,518,282
- Issue date Aug 27, 2013
- Lam Research Corporation
- Wonchul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for pattern collapse free wet processing of se...
- Patent number 8,440,573
- Issue date May 14, 2013
- Lam Research Corporation
- Katrina Mikhaylichenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etch of high-k dielectric material
- Patent number 8,124,538
- Issue date Feb 28, 2012
- Lam Research Corporation
- In Deog Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extending lifetime of yttrium oxide as a plasma chamber material
- Patent number 8,097,105
- Issue date Jan 17, 2012
- Lam Research Corporation
- Hong Shih
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Phase change alloy etch
- Patent number 7,682,979
- Issue date Mar 23, 2010
- Lam Research Corporation
- Qian Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing microloading in etching high aspect ratio struc...
- Patent number 7,629,255
- Issue date Dec 8, 2009
- Lam Research Corporation
- Qian Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten silicide etch process with reduced etch rate micro-loading
- Patent number 7,413,992
- Issue date Aug 19, 2008
- Lam Research Corporation
- Sok Kiow Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively etching an aluminum containing layer
- Patent number 7,208,420
- Issue date Apr 24, 2007
- Lam Research Corporation
- Zhigang Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Residual halogen reduction with microwave stripper
- Patent number 6,774,045
- Issue date Aug 10, 2004
- Lam Research Corporation
- Shenjian Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA
- Publication number 20160155643
- Publication date Jun 2, 2016
- LAM RESEARCH CORPORATION
- Shih-Yuan CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA
- Publication number 20140248779
- Publication date Sep 4, 2014
- Shih-Yuan CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDING LIFETIME OF YTTRIUM OXIDE AS A PLASMA CHAMBER MATERIAL
- Publication number 20120144640
- Publication date Jun 14, 2012
- LAM RESEARCH CORPORATION
- Hong Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSED BIAS PLASMA PROCESS TO CONTROL MICROLOADING
- Publication number 20110281438
- Publication date Nov 17, 2011
- LAM RESEARCH CORPORATION
- Wonchul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR PATTERN COLLAPSE FREE WET PROCESSING OF SE...
- Publication number 20110183522
- Publication date Jul 28, 2011
- LAM RESEARCH CORPORATION
- Katrina Mikhaylichenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA P...
- Publication number 20110146909
- Publication date Jun 23, 2011
- LAM RESEARCH CORPORATION
- Hong Shih
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF CONTROLLING ETCH MICROLOADING FOR A TUNGSTEN-CONTAINING L...
- Publication number 20110151670
- Publication date Jun 23, 2011
- LAM RESEARCH CORPORATION
- Wonchul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA
- Publication number 20110104616
- Publication date May 5, 2011
- LAM RESEARCH CORPORATION
- Shih-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCH METHOD TO REDUCE MICRO-LOADING
- Publication number 20110021029
- Publication date Jan 27, 2011
- Lam Research Corporation
- Tom Kamp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ETCH OF HIGH-K DIELECTRIC MATERIAL
- Publication number 20090258502
- Publication date Oct 15, 2009
- LAM RESEARCH CORPORATION
- In Deog BAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase change alloy etch
- Publication number 20090130855
- Publication date May 21, 2009
- Lam Research Corporation
- Qian Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING MICROLOADING IN ETCHING HIGH ASPECT RATIO STRUC...
- Publication number 20080296736
- Publication date Dec 4, 2008
- LAM RESEARCH CORPORATION
- Qian Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Extending lifetime of yttrium oxide as a plasma chamber material
- Publication number 20080169588
- Publication date Jul 17, 2008
- LAM RESEARCH CORPORATION
- Hong Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective etch of films with high dielectric constant with H2 addition
- Publication number 20070056925
- Publication date Mar 15, 2007
- Lam Research Corporation
- Shenjian Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tungsten silicide etch process with reduced etch rate micro-loading
- Publication number 20060273072
- Publication date Dec 7, 2006
- LAM RESEARCH CORPORATION
- Sok Kiow Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for wet cleaning quartz surfaces of components for plasma p...
- Publication number 20050274396
- Publication date Dec 15, 2005
- Hong Shih
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Shenjian Liu

Person

Patents Grantslast 30 patents

Line width roughness improvement with noble gas plasma

Line width roughness improvement with noble gas plasma

Plasma etch method to reduce micro-loading

Line width roughness improvement with noble gas plasma

Pulsed bias plasma process to control microloading

Extending lifetime of yttrium oxide as a plasma chamber material

Method of controlling etch microloading for a tungsten-containing l...

Method and apparatus for pattern collapse free wet processing of se...

Selective etch of high-k dielectric material

Extending lifetime of yttrium oxide as a plasma chamber material

Phase change alloy etch

Method for reducing microloading in etching high aspect ratio struc...

Tungsten silicide etch process with reduced etch rate micro-loading

Method for selectively etching an aluminum containing layer

Residual halogen reduction with microwave stripper

Patents Applicationslast 30 patents

LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA

LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA

EXTENDING LIFETIME OF YTTRIUM OXIDE AS A PLASMA CHAMBER MATERIAL

PULSED BIAS PLASMA PROCESS TO CONTROL MICROLOADING

METHOD AND APPARATUS FOR PATTERN COLLAPSE FREE WET PROCESSING OF SE...

METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA P...

METHOD OF CONTROLLING ETCH MICROLOADING FOR A TUNGSTEN-CONTAINING L...

LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA

PLASMA ETCH METHOD TO REDUCE MICRO-LOADING

SELECTIVE ETCH OF HIGH-K DIELECTRIC MATERIAL

Phase change alloy etch

METHOD FOR REDUCING MICROLOADING IN ETCHING HIGH ASPECT RATIO STRUC...

Extending lifetime of yttrium oxide as a plasma chamber material

Selective etch of films with high dielectric constant with H2 addition

Tungsten silicide etch process with reduced etch rate micro-loading

Methods for wet cleaning quartz surfaces of components for plasma p...