Sheung-Hee Park

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective application of word line bias to minimize fringe effects...
- Patent number 7,952,938
- Issue date May 31, 2011
- Spansion LLC
- Gulzar Ahmed Kathawala
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective application of word line bias to minimize fringe effects...
- Patent number 7,746,705
- Issue date Jun 29, 2010
- Spansion LLC
- Gulzar Ahmed Kathawala
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory device having increased over-erase correction efficien...
- Patent number 7,599,228
- Issue date Oct 6, 2009
- Spansion LLC
- Qiang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Cycling improvement using higher erase bias
- Patent number 7,561,471
- Issue date Jul 14, 2009
- Spansion LLC
- Sheung-Hee Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Repetitive erase verify technique for flash memory devices
- Patent number 7,385,851
- Issue date Jun 10, 2008
- Spansion LLC
- Sheung-Hee Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Ramp gate erase for dual bit flash memory
- Patent number 7,319,615
- Issue date Jan 15, 2008
- Spansion LLC
- Sheung-Hee Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory with buried bit lines
- Patent number 7,288,809
- Issue date Oct 30, 2007
- Spansion LLC
- Richard M. Fastow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Positive gate stress during erase to improve retention in multi-lev...
- Patent number 7,142,455
- Issue date Nov 28, 2006
- Spansion, LLC
- Sung-Chul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Ramped soft programming for control of erase voltage distributions...
- Patent number 7,020,021
- Issue date Mar 28, 2006
- Advanced Micro Devices, Inc.
- Wing-Han Leung
- G11 - INFORMATION STORAGE
Information Patent Grant
Reading flash memory
- Patent number 6,950,344
- Issue date Sep 27, 2005
- Advanced Micro Devices, Inc.
- Richard M. Fastow
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming of a flash memory cell
- Patent number 6,937,518
- Issue date Aug 30, 2005
- Advanced Micro Devices, Inc.
- Sheung Hee Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory cell having reduced leakage current
- Patent number 6,897,518
- Issue date May 24, 2005
- Advanced Micro Devices, Inc.
- Sheung Hee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of programming a memory cell
- Patent number 6,781,885
- Issue date Aug 24, 2004
- Advanced Micro Devices, Inc.
- Sheung Hee Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming memory cells
- Patent number 6,754,109
- Issue date Jun 22, 2004
- Advanced Micro Devices, Inc.
- Richard Fastow
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory device with increase of efficiency during an APDE (aut...
- Patent number 6,469,939
- Issue date Oct 22, 2002
- Advanced Micro Devices, Inc.
- Zhigang Wang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE APPLICATION OF WORD LINE BIAS TO MINIMIZE FRINGE EFFECTS...
- Publication number 20100208527
- Publication date Aug 19, 2010
- SPANSION LLC
- Gulzar Ahmed Kathawala
- G11 - INFORMATION STORAGE
Information Patent Application
Selective Application Of Word Line Bias To Minimize Fringe Effects...
- Publication number 20090147589
- Publication date Jun 11, 2009
- SPANSION LLC
- Gulzar Ahmed Kathawala
- G11 - INFORMATION STORAGE
Information Patent Application
Cycling improvement using higher erase bias
- Publication number 20080151644
- Publication date Jun 26, 2008
- Spansion LLC
- Sheung-Hee Park
- G11 - INFORMATION STORAGE
Information Patent Application
REPETITIVE ERASE VERIFY TECHNIQUE FOR FLASH MEMORY DEVICES
- Publication number 20080151636
- Publication date Jun 26, 2008
- Sheung-Hee Park
- G11 - INFORMATION STORAGE
Information Patent Application
RAMP GATE ERASE FOR DUAL BIT FLASH MEMORY
- Publication number 20080037330
- Publication date Feb 14, 2008
- Spansion LLC
- Sheung-Hee Park
- G11 - INFORMATION STORAGE
Information Patent Application
Lowered channel doping with source side boron implant for deep sub...
- Publication number 20020106852
- Publication date Aug 8, 2002
- Yue-Song He
- H01 - BASIC ELECTRIC ELEMENTS

Sheung-Hee Park

Person

Patents Grantslast 30 patents

Selective application of word line bias to minimize fringe effects...

Selective application of word line bias to minimize fringe effects...

Flash memory device having increased over-erase correction efficien...

Cycling improvement using higher erase bias

Repetitive erase verify technique for flash memory devices

Ramp gate erase for dual bit flash memory

Flash memory with buried bit lines

Positive gate stress during erase to improve retention in multi-lev...

Ramped soft programming for control of erase voltage distributions...

Reading flash memory

Programming of a flash memory cell

Flash memory cell having reduced leakage current

Method of programming a memory cell

Method of programming memory cells

Flash memory device with increase of efficiency during an APDE (aut...

Patents Applicationslast 30 patents

SELECTIVE APPLICATION OF WORD LINE BIAS TO MINIMIZE FRINGE EFFECTS...

Selective Application Of Word Line Bias To Minimize Fringe Effects...

Cycling improvement using higher erase bias

REPETITIVE ERASE VERIFY TECHNIQUE FOR FLASH MEMORY DEVICES

RAMP GATE ERASE FOR DUAL BIT FLASH MEMORY

Lowered channel doping with source side boron implant for deep sub...