Shiang-Ching Cheng

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor light emitting device with conductive window layer
- Patent number 6,169,298
- Issue date Jan 2, 2001
- Kingmax Technology Inc.
- Ying-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process and structure of ink jet printhead
- Patent number 6,159,387
- Issue date Dec 12, 2000
- Microjet Technology Co., Inc.
- Tse-Chi Mou
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Grant
Method of reducing pin holes in a nitride passivation layer
- Patent number 6,103,639
- Issue date Aug 15, 2000
- Vanguard International Semiconductor Corporation
- Tony Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode with anti-reflector
- Patent number 6,097,041
- Issue date Aug 1, 2000
- Kingmax Technology Inc.
- Ying-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating via hole in chip
- Patent number 6,096,635
- Issue date Aug 1, 2000
- Microjet Technology Co., Ltd.
- Tse-Chi Mou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.sub....
- Patent number 6,017,614
- Issue date Jan 25, 2000
- Vanguard International Semiconductor Corporation
- Kwong-Jr Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photoelectric semiconductor device having a GaAsP substrate
- Patent number 6,008,507
- Issue date Dec 28, 1999
- Kingmax Technology Inc.
- Ying-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a tungsten layer with N2 plasma treatment
- Patent number 6,004,877
- Issue date Dec 21, 1999
- Vanguard International Semiconductor Corporation
- Tony Liang-Tung Chang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma treatment method for PECVD silicon nitride films for improve...
- Patent number 5,962,344
- Issue date Oct 5, 1999
- Vanguard International Semiconductor Corporation
- Yeur-Luen Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a plasma-enhanced chemical vapor deposited SiO.su...
- Patent number 5,851,603
- Issue date Dec 22, 1998
- Vanguard International Semiconductor Corporation
- Kwong-Jr Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Shiang-Ching Cheng

Person

Patents Grantslast 30 patents

Semiconductor light emitting device with conductive window layer

Manufacturing process and structure of ink jet printhead

Method of reducing pin holes in a nitride passivation layer

Light-emitting diode with anti-reflector

Method for creating via hole in chip

Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.sub....

Photoelectric semiconductor device having a GaAsP substrate

Method of forming a tungsten layer with N2 plasma treatment

Plasma treatment method for PECVD silicon nitride films for improve...

Method for making a plasma-enhanced chemical vapor deposited SiO.su...