Shili ZHANG

Person

Stockholm, SE

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit sensor device for charge detection hybridizing a...
- Patent number 10,209,215
- Issue date Feb 19, 2019
- K.Eklund Innovation
- Klas-Hakan Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical gate MOS device and method of making
- Patent number 9,209,029
- Issue date Dec 8, 2015
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body contact SOI transistor structure and method of making
- Patent number 9,000,521
- Issue date Apr 7, 2015
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source-drain field-effect transistor having a mixed scho...
- Patent number 8,969,160
- Issue date Mar 3, 2015
- Fudan University
- Yinghua Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky junction source/drain transistor and method of making
- Patent number 8,697,529
- Issue date Apr 15, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AN INTEGRATED SENSOR DEVICE FOR CHARGE DETECTION
- Publication number 20160153932
- Publication date Jun 2, 2016
- K.EKLUND INNOVATION
- Klas-Hakan EKLUND
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF MAKING A DYNAMIC RANDOM ACCESS MEMORY ARRAY
- Publication number 20140342516
- Publication date Nov 20, 2014
- Wu Dongping
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetrical Gate MOS Device and Method of Making
- Publication number 20140048875
- Publication date Feb 20, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nano-MOS Devices and Method of Making
- Publication number 20140034955
- Publication date Feb 6, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Gate MOS Device and Method of Making
- Publication number 20140034956
- Publication date Feb 6, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Making Metal/Semiconductor Compound Thin Film
- Publication number 20140011355
- Publication date Jan 9, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING FIELD EFFECT TRANSISTOR
- Publication number 20130295732
- Publication date Nov 7, 2013
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING TRANSISTORS
- Publication number 20130270615
- Publication date Oct 17, 2013
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Source-Drain Field Effect Transistor and Method of Making
- Publication number 20130032881
- Publication date Feb 7, 2013
- Fudan University
- Yinghua Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BODY CONTACT SOI TRANSISTOR STRUCTURE AND METHOD OF MAKING
- Publication number 20130026573
- Publication date Jan 31, 2013
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS

Shili ZHANG

Person

Patents Grantslast 30 patents

Integrated circuit sensor device for charge detection hybridizing a...

Asymmetrical gate MOS device and method of making

Body contact SOI transistor structure and method of making

Asymmetric source-drain field-effect transistor having a mixed scho...

Schottky junction source/drain transistor and method of making

Patents Applicationslast 30 patents

AN INTEGRATED SENSOR DEVICE FOR CHARGE DETECTION

METHOD OF MAKING A DYNAMIC RANDOM ACCESS MEMORY ARRAY

Asymmetrical Gate MOS Device and Method of Making

Nano-MOS Devices and Method of Making

Asymmetric Gate MOS Device and Method of Making

Method of Making Metal/Semiconductor Compound Thin Film

METHOD FOR MAKING FIELD EFFECT TRANSISTOR

METHOD FOR MAKING TRANSISTORS

Asymmetric Source-Drain Field Effect Transistor and Method of Making

BODY CONTACT SOI TRANSISTOR STRUCTURE AND METHOD OF MAKING